DATE CHECKED Jan.-11-'02 CHECKED Jan.-11-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. SPECIFICATION Device Name : Power MOSFET Type Name : 2SK3605-01 Spec. No. : MS5F5116 Date : Jan. - 11- 2002 Fuji Electric Co.,Ltd. Matsumoto Factory APPROVED DRAWN Jan.-11-'02 Fuji Electric Co.,Ltd. MS5F5116 1 / 21 H04-004-05 Date Jan.-11 2002 Classification Index Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Revised Records Content Drawn Checked Checked Approved enactment MS5F5116 2 / 21 H04-004-03 1.Scope This specifies Fuji Power MOSFET 2SK3605-01 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TFP Package Outview See to 12/21 page 5.Absolute Maximum Ratings at Tc=25°° C (unless otherwise specified) Description Symbol Drain-Source Voltage Characteristics Unit VDS 150 V VDSX 120 V ± 16 A ± 3.1 A IDP ± 64 A VGS ± 30 V 16 A Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage VGS=-30V *1 , Ta=25°C Maximum Avalanche Energy EAS 189 mJ Maximum Drain-Source dV/dt dVDS/dt 20 kV/µs L=1.08mH Vcc=48V VDS<=150V Peak Diode Recovery dV/dt dV/dt 5 kV/µs *2 Maximum Power Dissipation PD 50 W 2.4 W Operating and Storage Tch 150 °C Temperature range Tstg -55 to +150 °C 2 *1 , Ta=25°C 2 *1 Surface mounted on 1000mm ,t=1.6mm FR-4 PCB (Drain pad area : 500mm ) *2 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C 6.Electrical Characteristics at Tc=25°° C (unless otherwise specified) Static Ratings Description Symbol Conditions min. typ. max. Unit 150 - - V 3.0 - 5.0 V - - 25 ID=250µA Drain-Source Breakdown Voltage BVDSS ID=250µA Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current VGS=0V IGSS Drain-Source On-State Resistance RDS(on) VDS=VGS VDS=150V Tch=25°C VGS=0V VDS=120V Tch=125°C VGS=0V µA - - 250 10 100 79 105 VGS=±30V VDS=0V ID=8A VGS=10V Fuji Electric Co.,Ltd. - DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Non-repetitive Avalanche Current IAS Remarks MS5F5116 nA mΩ 3 / 21 H04-004-03 Dynamic Ratings Description Symbol Conditions min. typ. max. Unit VDS=25V 6 12 - S ID=8A Forward Transconductance gfs Input Capacitance Ciss VDS=75V - 760 1140 Output Capacitance Coss VGS=0V - 130 195 6 9 Reverse Transfer f=1MHz Capacitance Crss - td(on) Vcc=48V - 12 18 tr VGS=10V - 2.8 4.2 td(off) ID=8A - 22 33 Turn-Off Time tf RGS=10Ω - 6.2 9.3 Total Gate Charge QG Vcc=75V - 21 31.5 Gate-Source Charge QGS ID=16A - 9 13.5 Gate-Drain Charge QGD VGS=10V - 6 9 min. typ. max. Unit 16 - - A - 1.10 1.65 V - 0.13 - µs - 0.59 - µC min. typ. max. Unit Turn-On Time ns nC Reverse Diode Description Symbol Conditions Avalanche Capability L=100µH IAV Tch=25°C See Fig.1 and Fig.2 IF=16A Diode Forward On-Voltage VSD VGS=0V Tch=25°C IF=16A Reverse Recovery VGS=0V Time trr Reverse Recovery -di/dt=100A/µ s Tch=25°C Charge Qrr 7.Thermal Resistance Description Symbol Channel to Case Rth(ch-c) 2.50 °C/W Channel to Ambient Rth(ch-a) 87.0 °C/W Channel to Ambient Rth(ch-a) *1 52.0 °C/W 2 2 *1 Surface mounted on 1000mm ,t=1.6mm FR-4 PCB (Drain pad area : 500mm ) Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. pF MS5F5116 4 / 21 H04-004-03 50Ω Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Fig.1 Test circuit L D.U.T L=100µH Vcc=48V Single Pulse Test MS5F5116 Vcc Fig.2 Operating waveforms +10V VGS -15V IDP BVDSS 0 VDS ID 5 / 21 H04-004-03 8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards. Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141 Humidification treatment (85±2°C,65±5%RH,168±24hr) Heat treatment of soldering (IR-ray Reflow ,235±5°C(240°Cmax.),10±1sec,2 times) Test Items Testing methods and Conditions 1 Vibration frequency : 100Hz to 2kHz 2 Acceleration : 100m/s Sweeping time : 20min./1 cycle 6times for each X,Y&Z directions. 2 Peak amplitude: 15km/s Duration time : 0.5ms 3times for each X,Y&Z directions. 2 Shock 3 Solderability 4 Resistance to Soldering Heat Reference Standard EIAJ ED4701 A-122 test code D Acceptance number 15 15 (0:1) A-131A test code B Solder temp. : 235±5°C Immersion time : 10±1sec IR-ray Reflowing A-133A test code 1-A Fuji Electric Co.,Ltd. Sampling number A-121 test code C Solder temp. : 215±5°C Immersion time : 10±0.5sec DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Mechanical test methods Test No. MS5F5116 15 15 6 / 21 H04-004-03 Test Items Testing methods and Conditions 1 High Temp. Storage 2 Low Temp. Storage 3 Temperature Humidity Storage 4 Temperature Humidity BIAS Temperature : 150+0/-5°C Test duration : 1000hr Temperature : -55+5/-0°C Test duration : 1000hr Temperature : 85±2°C Relative humidity : 85±5% Test duration : 1000hr Temperature : 85±2°C Relative humidity : 85±5% Bias Voltage : VDS(max) * 0.8 5 Unsaturated Pressurized Vapor Test duration : 1000hr Temperature : 130±2°C Relative humidity : 85±5% Vapor pressure : 230kPa Test duration : 96hr 6 Temperature Cycle Test for FET 7 Thermal Shock 1 Intermittent Operating Life 2 HTRB (Gate-source) 3 HTRB (Drain-Source) Reference Standard EIAJ ED4701 B-111A Sampling number Acceptance number 22 B-112A 22 B-121A test code C 22 B-122A test code C 22 B-123A test code C 22 B-131A test code A 22 B-141A test code A 22 D-322 22 D-323 22 D-323 22 (0:1) High temp.side : 150±5°C Low temp.side : -55±5°C Duration time : HT 30min,LT 30min Number of cycles : 100cycles Fluid : pure water(running water) High temp.side : 100+0/-5°C Low temp.side : 0+5/-0°C Duration time : HT 5min,LT 5min Number of cycles : 100cycles Ta=25±5°C ∆Tc=90degree Tch≤Tch(max.) Test duration : 3000 cycle Temperature : 150+0/-5°C Bias Voltage : VGS(max) Test duration : 1000hr Temperature : 150+0/-5°C Bias Voltage : VDS(max) Test duration : 1000hr (0:1) Failure Criteria Symbols Failure Criteria Lower Limit Upper Limit Breakdown Voltage BVDSS Zero gate Voltage Drain-Source Current IDSS Unit LSL * 0.8 ----- V ----- USL * 2 A Gate-Source Leakage Current IGSS ----- USL * 2 A Gate Threshold Voltage VGS(th) LSL * 0.8 USL * 1.2 V Drain-Source on-state Resistance RDS(on) ----- USL * 1.2 Ω Forward Transconductance gfs LSL * 0.8 ----- S Diode forward on-Voltage VSD ----- USL * 1.2 V Marking Soldering ----- With eyes or Microscope ----- and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150°C. Fuji Electric Co.,Ltd. DWG.NO. Electrical Characteristics Item Outview This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Climatic test methods Test No. MS5F5116 7 / 21 H04-004-03 9 Warning 9.1. Although Fuji Electric is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 9.2. The products introduced in this Specification are intended for use in the following electronic and electrical equipment witch has normal reliability requirements. • Communications equipment (Terminal devices) • Machine tools • AV equipments • Personal equipments • Industrial robots etc… 9.3. If you need to use a product in this Specification for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment becomes faulty. • Transportation equipment (Automotives, Locomotives and ships etc…) • Backbone network equipment • Traffic-signal control equipment • Gas alarm, Leakage gas auto breaker • Burglar alarm, Fire alarm, Emergency equipments etc… 9.4. Don’t use products in this Specification for the equipment requiring strict reliability such as (without limitation) • Aerospace equipment • Aeronautic equipment • nuclear control equipment • Medical equipment • Submarine repeater equipment 10. General Notice 10.1. Preventing ESD Damage Although the gate oxide of Fuji Power MOSFETs is much higher ruggedness to ESD damage than small-Signal MOSFETs and CMOS ICs, careful handling of any MOS devices are an important consideration. 1) When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals. 2) It is recommended that any handling of MOSFETs is done while used electrically conductive floor and tablemats that are grounded. 3) Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1MΩ) 4) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. • Computers OA equipments • Measurement equipments • Electrical home appliances MS5F5116 8 / 21 H04-004-03 10.2. Short mode failure / Open mode failure The MOSFETs may be in the risk of having short mode failure or open mode failure when the applied over voltage, over current or over temperature each specified maximum rating. It is recommended to use the fail-safe equipment or circuit from such possible failures. 10.3. An Electric shock / A Skin burn You may be in risk for an Electric shock or a Skin burn for directly touching to the leads or package of the MOSFETs while turning on electricity or operating. 10.4. Smoke / Fire Fuji MOSFETs are made of incombustibility material. However, a failure of the MOSFETs may emit smoke or fire. Also, operating the MOSFETs near any flammable place or material may risk the MOSFETs to emit smoke or fire due to the MOSFETs reach high temperature while operated. 10.6. Radiation field Don’t use of the device under the radiation field since the device is not designed for radiation proofing. 11. Notes for Design 11.1. You must design the MOSFETs to be operated within specified maximum ratings (Voltage, Current, Temperature etc…) which are imperative to prevent possible failure or destruction of the device. 11.2. We recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent the fire or damage in case of unexpected accident may have occurred. 11.3. You must design the MOSFETs within it’s reliability and lifetime in certain the environment or condition. There is a risk that MOSFETs breakdown earlier than the target lifetime of the your products when MOSFETs was used in the reliability condition excessively. Especially avoid use of the MOSFETs under the higher humidity, corrosive gases. 11.4. We recommend to consider for the temperature rise not only for the Channel but also for the Leads if it designed to large current operation to the MOSFETs. 11.5. We only guarantee the non-repetitive Avalanche capability and not for the continuous, repetitive Avalanche capability which can be assumed as abnormal condition. Please note the device may be destructed from the Avalanche over the specified maximum rating. Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 10.5. Corrosion / Erosion Avoid use or storage of the MOSFETs under the higher humidity, corrosive gases. It will lead the device to corrode and possibly cause the device to fail. MS5F5116 9 / 21 H04-004-03 12. Note on implementation 12.1. Soldering Soldering involves temperatures witch exceed the device storage temperature rating. To avoid device damage and to ensure reliability, the following guidelines from the quality assurance standard must be observed. 1) Solder temperature and duration (Through-Hole Package) Solder temperature Duration 260±5 °C 10±1 seconds 350±10 °C 3.5±0.5 seconds 2) The device should not be soldered closer than 1mm from the package. (* through-hole package) 3) When flow soldered, care must be taken to Avoid immersing the package in the solder-bath. Table 1 : Recommended tightening torques. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Screw Recommended tightening torques M3 30 – 50 Ncm M3 40 – 60 Ncm M3 60 –80 Ncm 12.3. If the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a point may cause the MOSFETs to be destructed. We recommend in such condition to process the surface of heat sink within ±50µm and use of thermal compound to optimize its efficiency of heat radiation. Moreover, it is important to evenly apply the compound and eliminate any air voids. A simple method is to apply a dot of compound of the appropriate quantity to the center of the case just below the chip mount. Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 12.2. Please see to the following the Torque reference when mounting the device to heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance. Both of these conditions may lead the device to be destructed. MS5F5116 10 / 21 H04-004-03 13.Notes for Storage 13.1. The MOSFETs should be stored at a standard temperature of 5 to 35 °C and humidity of 45 to 75%RH. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. 13.2. Avoid exposure to corrosive gases and dust. 13.3. Rapid temperature changes may cause condensation on the MOSFETs surface. Therefore, store the MOSFETs in a place with few temperature changes. 13.4. While in storage, it is important that nothing be loaded on top of the MOSFETs, since this may cause excessive external force on the case. 13.5. Store MOSFETs with unprocessed lead terminals. Rust may cause presoldered connections to go bad during later processing. 14. Additional points If you have any question about any portion in this Specification, ask Fuji Electric or its sales agents before using the product. Neither Fuji nor its agents shall be liable for any injury caused bay any use of the products not in accordance with instructions set forth herein. Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 13.6. Use only antistatic containers or shipping bag for storing MOSFETs. MS5F5116 11 / 21 H04-004-03 FUJI POWER MOS FET OUT VIEW 外形寸法図 Fig.1 Ｐ矢視図参照 MARKING 照 Fig.1 Ｐ矢視図 DIMENSIONS ARE IN MILLIMETERS. MARKING 表示内容 Trademark 商標 Special specification for customer 特殊品記号 Lot No. ロットNo. Type name 形名 Fuji Electric Co.,Ltd. Note:1. Dimension shown in ( ) is reference values. 注）１.（ ）内寸法は参考値とする。 CONNECTION 結線図 D G S1 S2 DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 表 示 内 容 MS5F5116 12 / 21 H04-004-03 0 0 25 50 25 Fuji Electric Co.,Ltd. 50 DWG.NO. PD [W] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. PD [W] 70 Allowable Power Dissipation PD=f(Tc) 60 50 40 30 20 10 0 75 75 100 100 125 125 MS5F5116 150 Tc [°C] Allowable Power Dissipation PD=f(Tc) 5 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 4 3 2 1 0 150 Tc [°C] 13 / 21 H04-004-03 0 0 2 1 4 2 3 Fuji Electric Co.,Ltd. 4 5 VGS[V] DWG.NO. ID[A] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. ID [A] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C 60 50 20V 40 10V 8V 30 7.5V 7.0V 20 6.5V 10 6.0V VGS=5.5V 0 6 VDS [V] 8 6 10 7 8 12 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 100 10 1 0.1 9 10 MS5F5116 14 / 21 H04-004-03 0.1 VGS= 5.5V 0 6.0V 10 Fuji Electric Co.,Ltd. DWG.NO. RDS(on) [ Ω ] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. gfs [S] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 100 10 1 0.1 1 10 6.5V 7.0V 20 100 ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25° C 0.30 7.5V 0.25 8V 0.20 0.15 10V 0.10 20V 0.05 0.00 30 40 ID [A] MS5F5116 15 / 21 H04-004-03 RDS(on) [ m Ω ] 150 -50 7.0 -50 -25 -25 0 0 Fuji Electric Co.,Ltd. 25 5.0 3.0 25 DWG.NO. VGS(th) [V] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 300 250 200 max. 100 typ. 50 0 50 Tch [°C] 75 50 75 Tch [°C] 100 100 125 125 MS5F5116 150 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 6.5 6.0 5.5 max. 4.5 4.0 3.5 min. 2.5 2.0 1.5 1.0 0.5 0.0 150 16 / 21 H04-004-03 VGS [V] 6 0 10 10 -1 Fuji Electric Co.,Ltd. DWG.NO. C [nF] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C 14 12 10 8 Vcc= 75V 4 2 0 20 10 0 30 10 10 1 40 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 0 Ciss -1 Coss 10 -2 Crss 10 -3 10 2 VDS [V] MS5F5116 17 / 21 H04-004-03 0.1 0.00 10 -1 0.25 0.50 0.75 Fuji Electric Co.,Ltd. DWG.NO. t [ns] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. IF [A] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 100 10 1 1.00 10 0 1.25 1.50 1.75 10 1 MS5F5116 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10Ω 10 3 2 tf 10 td(off) 1 td(on) 10 tr 10 0 10 2 ID [A] 18 / 21 H04-004-03 0 0 25 25 50 50 Fuji Electric Co.,Ltd. DWG.NO. EAV [mJ] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. IAV [A] Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 30 25 20 15 10 5 0 75 100 75 100 125 125 150 starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=16A 300 250 200 150 100 50 0 150 starting Tch [°C] MS5F5116 19 / 21 H04-004-03 Avalanche Current I AV [A] 2 -8 10 10 -6 10 -7 10 -5 10 -6 10 -4 Fuji Electric Co.,Ltd. DWG.NO. Zth(ch-c) [°C/W] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V 1 Single Pulse 10 10 0 10 -1 10 -2 10 -5 10 -3 10 -4 10 -2 10 -3 10 -1 MS5F5116 10 -2 tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 10 1 10 0 10 -1 10 -2 10 -3 10 0 t [sec] 20 / 21 H04-004-03 0 1000 2000 Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Rth(ch-a) [°C/W] 100 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 90 80 70 60 50 40 30 20 10 0 3000 2 4000 5000 Drain Pad Area [mm ] MS5F5116 21 / 21 H04-004-03