DATE CHECKED May.-20-'03 CHECKED May.-20-'03 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. SPECIFICATION Device Name : Power MOSFET Type Name : 2SK3697-01 Spec. No. : MS5F5476 Date : May.-20-2003 Fuji Electric Co.,Ltd. Matsumoto Factory APPROVED DRAWN May.-20-'03 Fuji Electric Co.,Ltd. MS5F5476 1 / 19 H04-004-05 Date Classification May.-20 2003 enactment Index Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Revised Records Content Drawn Checked Checked Approved MS5F5476 2 / 19 H04-004-03 1.Scope This specifies Fuji Power MOSFET 2SK3697-01 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-247 Outview See to 8/19 page 5.Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol Drain-Source Voltage Unit VDS 600 V VDSX 600 V ID ± 42 A ± 2.7 A Remarks VGS=-30V Ta=25°C Pulsed Drain Current IDP ± 168 A Gate-Source Voltage Non-Repetitive Maximum Avalanche Current Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt VGS ± 30 V IAS 42 A IAR 21 A EAS 828 mJ dVDS/dt 20 kV/µs VDS<=600V Peak Diode Recovery dV/dt dV/dt 5 kV/µs *3 Peak Diode Recovery -di/dt -di/dt A/µs *4 Maximum Power Dissipation PD 100 2.50 Operating and Storage Tch W 600 Tch=25°C *1 Tch<=150°C *1 *2 Ta=25°C Tc=25°C °C 150 Tstg -55 to +150 Temperature range °C *1 See to Avalanche Current Graph (Page 17/19) *2 L=861µH,Vcc=60V,Starting Tch=25°C, See to Avalanche Energy Graph (Page 18/19) *3 IF≤-ID,-di/dt=100A/µs,Vcc≤BVDSS,Tch≤150°C *4 IF≤-ID,dV/dt=5kV/µs,Vcc≤BVDSS,Tch≤150°C 6.Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings Description Symbol Conditions min. typ. max. Unit 600 - - V 3.0 - 5.0 V - 10 25 µA - 1.0 2.0 mA - 10 100 nA - 0.14 0.17 Ω ID=250µA Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) VGS=0V ID=250µA VDS=VGS VDS=600V Tch=25°C VGS=0V VDS=480V Tch=125°C VGS=0V VGS= ± 30V VDS=0V ID=21A VGS=10V Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Continuous Drain Current Characteristics MS5F5476 3 / 19 H04-004-03 Dynamic Ratings Description Symbol Conditions min. typ. max. Unit VDS=25V 20 40 - S ID=21A Forward Transconductance gfs Input Capacitance Ciss VDS=25V - 5100 7650 Output Capacitance Coss VGS=0V - 700 1050 f=1MHz - 48 72 td(on) Vcc=300V - 60 90 tr VGS=10V - 90 135 td(off) ID=21A - 180 270 Turn-Off Time tf RGS=10Ω - 30 45 Total Gate Charge QG Vcc=300V - 105 160 Gate-Source Charge QGS ID=42A - 44 65 Gate-Drain Charge QGD VGS=10V - 30 45 min. typ. max. Unit 42 - - A - 1.20 1.80 V - 160 250 ns - 1.00 2.5 µC min. typ. max. Unit Reverse Transfer pF Capacitance Crss ns nC Reverse Diode Description Symbol Avalanche Capability Conditions L=861µH IAV Tch=25°C See Fig.1 and Fig.2 IF=42A Diode Forward On-Voltage VSD VGS=0V Tch=25°C IF=42A Reverse Recovery Time trr Reverse Recovery VGS=0V -di/dt=100A/µ s Charge Qrr Tch=25°C 7.Thermal Resistance Description Symbol Channel to Case Rth(ch-c) 0.208 °C/W Channel to Ambient Rth(ch-a) 50.0 °C/W Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Turn-On Time MS5F5476 4 / 19 H04-004-03 50Ω Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Fig.1 Test circuit L D.U.T L=861µH Vcc=60V Single Pulse Test MS5F5476 Vcc Fig.2 Operating waveforms +10V VGS -15V IDP BVDSS 0 VDS ID 5 / 19 H04-004-03 8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards. Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141 Humidification treatment (85±2°C,65±5%RH,168±24hr) Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times) Test Items 1 Terminal Strength (Tensile) Mechanical test methods This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 2 Terminal Strength (Bending) 3 Mounting Strength 4 Vibration 5 Shock 6 Solderability Testing methods and Conditions Reference Standard EIAJ ED4701 Pull force TO-220,TO-220F : 10N TO-3P,TO-3PF,TO-247 : 25N TO-3PL : 45N T-Pack,K-Pack : 10N Force maintaining duration :30±5sec Load force TO-220,TO-220F : 5N TO-3P,TO-3PF,TO-247 : 10N TO-3PL : 15N T-Pack,K-Pack : 5N Number of times :2times(90deg./time) Screwing torque value: (M3) TO-220,TO-220F : 40±10Ncm TO-3P,TO-3PF,TO-247 : 50±10Ncm TO-3PL : 70±10Ncm frequency : 100Hz to 2kHz Acceleration : 100m/s 2 Sweeping time : 20min./1 cycle 6times for each X,Y&Z directions. Peak amplitude: 15km/s 2 Duration time : 0.5ms 3times for each X,Y&Z directions. Each terminal shall be immersed in the solder bath within 1 to 1.5mm from the body. 7 Resistance to Soldering Heat Solder temp. : 260±5°C Immersion time : 10±1sec Number of times : 2times Fuji Electric Co.,Ltd. Sampling number Acceptance number A-111A method 1 15 A-111A method 3 15 A-112 method 2 15 A-121 test code C 15 (0:1) Solder temp. : 235±5°C Immersion time : 5±0.5sec DWG.NO. Test No. A-122 test code D 15 A-131A test code A 15 A-132 15 MS5F5476 6 / 19 H04-004-03 Test Items Testing methods and Conditions 1 High Temp. Storage 2 Low Temp. Storage 3 Temperature Humidity Storage 4 Temperature Humidity BIAS Temperature : 150+0/-5°C Test duration : 1000hr Temperature : -55+5/-0°C Test duration : 1000hr Temperature : 85±2°C Relative humidity : 85±5% Test duration : 1000hr Temperature : 85±2°C Relative humidity : 85±5% Bias Voltage : VDS(max) * 0.8 5 Unsaturated Pressurized Vapor Test duration : 1000hr Temperature : 130±2°C Relative humidity : 85±5% Vapor pressure : 230kPa Test duration : 48hr 6 Temperature Cycle Test for FET 7 Thermal Shock 1 Intermittent Operating Life 2 HTRB (Gate-source) 3 HTRB (Drain-Source) Reference Standard EIAJ ED4701 B-111A Sampling number Acceptance number 22 B-112A 22 B-121A test code C 22 B-122A test code C 22 (0:1) High temp.side : 150±5°C Low temp.side : -55±5°C Duration time : HT 30min,LT 30min Number of cycles : 100cycles Fluid : pure water(running water) High temp.side : 100+0/-5°C Low temp.side : 0+5/-0°C Duration time : HT 5min,LT 5min Number of cycles : 100cycles Ta=25±5°C ∆Tc=90degree Tch≤Tch(max.) Test duration : 3000 cycle Temperature : Tch=150+0/-5°C Bias Voltage : VGS(max) Test duration : 1000hr Temperature : Tch=150+0/-5°C Bias Voltage : VDS(max) * 0.8 Test duration : 1000hr B-123A test code C 22 B-131A test code A 22 B-141A test code A 22 D-322 22 D-323 22 D-323 22 (0:1) Failure Criteria Symbols Failure Criteria Lower Limit Upper Limit Breakdown Voltage BVDSS Zero gate Voltage Drain-Source Current Unit LSL * 1.0 ----- V IDSS ----- USL * 2 A Gate-Source Leakage Current IGSS ----- USL * 2 A Gate Threshold Voltage VGS(th) LSL * 0.8 USL * 1.2 V Drain-Source on-state Resistance RDS(on) ----- USL * 1.2 Ω Forward Transconductance gfs LSL * 0.8 ----- S Diode forward on-Voltage VSD ----- USL * 1.2 V Marking Soldering ----- With eyes or Microscope ----- and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150°C. Fuji Electric Co.,Ltd. DWG.NO. Electrical Characteristics Item Outview This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Climatic test methods Test No. MS5F5476 7 / 19 H04-004-03 DWG.NO. Fuji Electric Co.,Ltd. MS5F5476 8 / 19 H04-004-03 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 9. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers Machine tools OA equipment AV equipment Communications equipment(Terminal devices) Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. The products described in this Specification are not designed or manufactured to be used in equipment or listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Submarine repeater equipment Gas alarms, leakage gas auto breakers Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 10. Warnings The MOSFETs should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). The MOSFETs may be destroyed if used beyond the rating. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition .Please note the device may be destructed from the Avalanche over the specified maximum rating. The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction. Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. You must careful handling of MOSFETs for ESD damage is an important consideration. When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals. It is recommended that any handling of MOSFETs is done while used electrically conductive floor and tablemats that are grounded. Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. systems used under life-threatening situations. If you are considering using these products in the equipment MS5F5476 9 / 19 H04-004-03 Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1MΩ) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation ,to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke of flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive Installation Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature 260±5 °C 350±10 °C Duration 10±1 seconds 3.5±0.5 seconds The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, take care to avoid immersing the package in the solder bath. Refer to the following torque reference When mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended tightening torques. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Screw Tightening torques M3 30 – 50 Ncm M3 40 – 60 Ncm M3 60 –80 Ncm Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. gas(hydrogen sulfide, sulfurous acid gas etc.) The MOSFETs should not used in an irradiated field since they are not radiation-proof. Note flatness : < ±30µm roughness : <10µm Plane off the edges : C<1.0mm MS5F5476 10 / 19 H04-004-03 The heat sink should have a flatness within±30µm and roughness within 10µm. Also, keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (We recommend plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage The MOSFETs must be stored at a standard temperature of 5 to 35°C and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause presoldered The MOSFETs should be stored in antistatic containers or shipping bags. 11.Appendix These products do not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ). These products do not contain Class-I ODS and Class-II ODS of ‘Clean Air Act of US’. ･ If you have any questions about any part of this Specification, please contact Fuji Electric or its sales agent before using the product. ･ Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. ･ The application examples described in this specification are merely typical uses of Fuji Electric products. ･ This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. connections to go fail during later processing. MS5F5476 11 / 19 H04-004-03 0 0 25 4 50 8 Fuji Electric Co.,Ltd. DWG.NO. ID [A] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. PD [W] Allowable Power Dissipation PD=f(Tc) 800 700 600 500 400 300 200 100 0 75 100 90 80 40 10 12 VDS [V] 16 125 20 150 Tc [°C] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 120 110 100 20V 10V 8V 7.0V 70 60 50 6.5V 30 20 VGS=6.0V 0 24 MS5F5476 12 / 19 H04-004-03 0 0.1 1 2 3 4 Fuji Electric Co.,Ltd. DWG.NO. gfs [S] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. ID[A] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 100 10 1 0.1 5 VGS[V] 6 1 7 10 8 9 10 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 100 10 1 0.1 100 ID [A] MS5F5476 13 / 19 H04-004-03 RDS(on) [ Ω ] VGS=6V 0 -50 20 -25 0 Fuji Electric Co.,Ltd. 25 DWG.NO. RDS(on) [ Ω ] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 0.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 6.5V 0.3 7.0V 0.2 8V 10V 20V 0.1 0.0 40 60 50 Tch [°C] 80 0.2 75 100 100 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=21A,VGS=10V 0.5 0.4 0.3 max. typ. 0.1 0.0 125 150 MS5F5476 14 / 19 H04-004-03 VGS(th) [V] 5.0 3.0 -50 0 -25 20 0 40 25 10 60 Fuji Electric Co.,Ltd. 80 DWG.NO. VGS [V] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 7.0 6.5 6.0 5.5 max. 4.5 4.0 3.5 min. 2.5 2.0 1.5 1.0 0.5 0.0 50 75 Tch [°C] 100 120 100 140 125 160 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=42A,Tch=25 °C 14 12 Vcc= 120V 300V 8 480V 6 4 2 0 180 Qg [nC] MS5F5476 15 / 19 H04-004-03 10 0 0.1 0.00 0.25 0.50 0.75 Fuji Electric Co.,Ltd. 1.00 DWG.NO. IF [A] This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. C [pF] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 5 10 4 Ciss 10 3 Coss 10 2 Crss 10 1 10 1 10 2 1.25 1.50 10 3 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 100 10 1 1.75 2.00 VSD [V] MS5F5476 16 / 19 H04-004-03 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 3 10 td(off) 2 10 t [ns] td(on) tf tr 1 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 10 0 1 10 2 10 10 ID [A] Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=60V 60 50 IAV [A] 40 Non-Repetitive (Single Pulse) 30 20 Repetitive 10 0 0 25 50 75 100 125 150 175 200 Fuji Electric Co.,Ltd. DWG.NO. starting Tch [°C] MS5F5476 17 / 19 H04-004-03 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=42A 2500 IAS=17A 2000 EAV [mJ] 1500 IAS=26A 1000 IAS=42A This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. 500 0 0 25 50 75 100 125 150 starting Tch [°C] 2 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=60V 1 10 0 10 -1 10 -2 10 10-8 10-7 10-6 10-5 10-4 10-3 10-2 tAV [sec] Fuji Electric Co.,Ltd. DWG.NO. Avalanche Current I AV [A] Single Pulse MS5F5476 18 / 19 H04-004-03 10 -6 10 -5 10 -4 Fuji Electric Co.,Ltd. DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Zth(ch-c) [°C/W] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 1 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 MS5F5476 10 0 t [sec] 19 / 19 H04-004-03