UNISONIC TECHNOLOGIES CO., LTD 9N95 Power MOSFET 9A, 950V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N95 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-247 FEATURES * RDS(ON) = 1.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N95L-T47-T 9N95G-T47-T www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-721.A 9N95 Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 950 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) ID 9.0 A Pulsed Drain Current (Note 2) IDM 36 A Avalanche Current (Note 2) IAR 9.0 A Single Pulsed(Note 3) EAS 900 mJ Avalanche Energy Repetitive(Note 2) EAR 28 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns 160 W Power Dissipation PD Linear Derating Factor above TC = 25°C 1.28 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 50 0.78 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Forward IGSSF Gate-Body Leakage Current Reverse IGSSR Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT VGS = 0 V, ID = 250μA 950 V VDS = 950 V, VGS = 0 V 10 μA VGS = 30 V, VDS = 0 V 100 nA VGS = -30 V, VDS = 0 V -100 nA ID=250μA, Referenced to 25°C 0.99 V/°C VDS = VGS, ID = 250μA VGS = 10V, ID = 4.5A VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 475V, ID =11.0 A, RG = 25Ω (Note 1, 2) VDS = 760V, ID = 11.0A, VGS = 10 V (Note 1,2) 3.0 1.05 5.0 1.4 V Ω 2100 2730 175 230 14 18 pF pF pF 50 120 100 75 45 13 18 ns ns ns ns nC nC nC 110 250 210 160 58 2 of 6 QW-R502-721.A 9N95 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 9.0 A, dIF / dt =100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 550 6.5 1.4 V 9.0 A 36 A ns μC 3 of 6 QW-R502-721.A 9N95 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-721.A 9N95 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-721.A 9N95 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-721.A