AGP15 Series Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Junction Plastic Controlled Avalanche Rectifiers Features 0.034 (0.86) 0.028 (0.71) Dia. DO-204AC (DO-15) Reverse Voltage 400 to 800V Forward Current 1.5A • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temp. metallurgically bonded constructed rectifiers • Controlled Avalanche characteristic combined with the ability to dissipate reverse power • Glass passivated cavity-free junction in DO-15 package • 1.5 Ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.1µA • Capable of meeting environmental standards of MIL-S-19500 • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension * d e t n e t Pa 1.0 (25.4) min. ® Dimensions in inches and (millimeters) 0.300 (7.6) 0.230 (5.8) Mechanical Data 0.140 (3.6) 0.104 (2.6) Dia. *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 of 1976; 1.0 (25.4) brazed-lead assembly by min. Patent No. 3,930,306 of 1976 and glass composition by Patent No. 3,752,701 of 1973 Case: Molded plastic over glass Terminals: Plated axial leads, solderable per MIL-STD-202, Method 208 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0154 oz., 0.4 g Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol AGP15-400 AGP15-600 AGP15-800 Unit Maximum Recurrent Peak Reverse Voltage VRRM 400 600 800 V Maximum RMS voltage VRMS 280 420 560 V VDC 400 600 800 V Maximum DC blocking voltage Maximum Peak Power Dissipation in the Avalanch Region 20 µs Pulse PRM 500 W Max. Average Forward Rectified Current 0.375” (9.5mm) Lead Lengths at TA = 55°C IAV 1.5 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Maximum full load reverse current, full cycle average 0.375" (9.5mm) lead length at TA = 55°C IR(AV) 100 µA Typical thermal resistance (Note 1) RθJA 25 °C/W TJ, TSTG –65 to +175 °C Operating and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Minimum Avalanche Breakdown Voltage at 100µA VBR 450 675 880 V Maximum Avalanche Breakdown Voltage at 100µA VBR 750 1000 1200 V Maximum instantaneous forward voltage at 1.5A VF 1.1 V Maximum reverse current at rated DC blocking voltage IR 5.0 µA Typical reverse recovery time IF=0.5A, IR=1.0A, Irr=0.25A trr 2.0 µs Typical junction capacitance at 4.0V, 1MHz CJ 15 pF Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C. Board mounted Document Number 88535 08-Jul-02 www.vishay.com 1 AGP15 Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Typical Instantaneous Forward Characteristics Fig. 1 – Maximum Forward Current Derating Curve 10 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 1.5 1.25 1.0 0.75 0.5 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375” (9.5mm) Lead Length 0.25 0 25 50 75 100 125 150 175 0.1 TJ = 25°C Pulse Width = 300µs 2% Duty Cycle 0.01 .4 .6 .8 1.0 1.2 1.4 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 3 – Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 – Typical Reverse Leakage Characteristics Instantaneous Reverse Leakage Current (µA) 100 Peak Forward Surge Current (A) 1.0 10 TA = 55°C 8.3ms Single Half Sine-Wave (JEDEC Method) 1.6 10 TJ = 125°C 1 TJ = 75°C 0.1 TJ = 25°C 0.01 1 1 10 100 Number of Cycles at 60HZ 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Maximum Non-Repetitive Reverse Avalanche Power Dissipation Peak Reverse Avalanche Power (W) 1,000 TJ = 25°C 100 10 10 100 1,000 10,000 Pulse Duration (µs) www.vishay.com 2 Document Number 88535 08-Jul-02