AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1412 is Pb-free (meets ROHS & Sony 259 specifications). AOL1412L is a Green Product ordering option. AOL1412 and AOL1412L are electrically identical. TM Ultra SO-8 Top View VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 3.9mΩ (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D Fits SOIC8 footprint ! D S Bottom tab connected to drain G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Maximum 30 Units V ±12 V I 85 TC=25°C Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H 27 Avalanche Current C IDSM IAR Repetitive avalanche energy L=0.3mH C EAR TA=70°C TC=25°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case 240 mJ W 5 W 3 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. A 50 TJ, TSTG t ≤ 10s Steady-State Steady-State 40 100 PDSM TA=70°C A 21 PD TC=100°C TA=25°C Power Dissipation 200 TA=25°C Power Dissipation B A 84 ID IDM TC=100°C RθJA RθJC Typ 19.6 50 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W AOL1412 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, V GS=0V VDS=24V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 On state drain current VGS=10V, VDS=5V 200 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V, ID=20A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 1.8 µA 2.4 V A 3.8 4.6 VDS=5V, ID=20A 112 0.4 6430 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A mA 0.1 VGS=4.5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Rg 20 6.2 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 9 Units V 3.9 Forward Transconductance Output Capacitance 0.1 5.0 VSD Crss 0.008 3.2 TJ=125°C gFS Coss Max 30 IDSS IS Typ mΩ mΩ S 0.5 V 85 A 7716 pF 756 pF 352 pF 0.9 1.4 96 115 44 53 Ω nC 17 nC Gate Drain Charge 13 nC Turn-On DelayTime 17.5 ns 10 ns 56 ns 10.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 26 25 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. I. The maximum current rating is limited by bond-wires. Rev1: June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 30 10V 6V 150 VDS=5V 25 4.5V 20 ID(A) ID (A) 120 90 VGS=3.5V 60 125° 15 10 25°C 30 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 2 VGS=4.5V 4 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 5 3 VGS=10V 2 1 ID=20A 1.8 VGS=10V 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 210 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 10 ID=20A 1.0E+01 8 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 2 125°C 6 25°C 1.0E-01 1.0E-02 1.0E-03 4 1.0E-04 25°C 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 10 10000 VDS=15V ID=20A 6 Capacitance (pF) VGS (Volts) 8 4 2 Ciss 8000 6000 4000 Crss 2000 0 0 20 40 60 80 Coss 0 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 10µs RDS(ON) limited 10.0 0.1s 180 1ms 160 10ms DC 1.0 100µ TJ(Max)=175°C TC=25°C 0.1 Power (W) ID (Amps) 100.0 TJ(Max)=175°C TC=25°C 140 120 100 0.0 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 80 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc .RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 TC=25°C 150 100 TC=150°C 50 0 1.0E-07 1.0E-06 1.0E-05 110 100 90 80 70 60 50 40 30 20 10 0 Power Dissipation (W) ID(A), Peak Avalanche Current 250 1.0E-04 0 1.0E-03 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 100 80 TJ(Max)=150°C TA=25°C 80 60 Power (W) Current rating ID(A) 25 40 20 60 40 20 0 0 25 50 75 100 125 150 0 0.001 175 T CASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. 100 1000 AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.9 0.8 1.0E-02 10A 0.6 VDS=12V VSD(V) IR (A) VDS=24V 1.0E-03 20A 0.7 1.0E-04 0.5 5A 0.4 0.3 0.2 1.0E-05 IS=1A 0.1 1.0E-06 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 70 8 di/dt=800A/us 60 Irm trr (ns) Irm (A) 6 125ºC 30 5 25ºC 2.5 125ºC 2 trr 15 25ºC 1.5 10 125ºC S 1 5 10 0.5 25ºC 0 4 0 5 10 15 20 25 0 0 30 8 25ºC 125ºC 40 25ºC 30 5 4 Qrr 20 3 2 10 1 Irm 0 0 200 400 600 800 0 1000 di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 20 25 30 3 Is=20A 30 6 25 trr (ns) Is=20A 50 15 35 7 Irm (A) 125ºC 10 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 60 5 125ºC 2 25ºC 20 25ºC trr 15 10 S 0 Qrr (nC) 3 di/dt=800A/us 20 25ºC Qrr 20 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 25 7 40 50 125ºC 50 Qrr (nC) 0 S 0 S 125ºC 1 5 0 0 200 400 600 800 0 1000 di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt