AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1420 is Pb-free (meets ROHS & Sony 259 specifications). AOL1420L is a Green Product ordering option. AOL1420 and AOL1420L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) Ultra SO-8TM Top View D S Fits SOIC8 footprint ! Bottom tab connected to drain D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G TA=70°C C TC=25°C Power Dissipation TC=100°C Power Dissipation A TA=70°C A 18 C B V 150 TA=25°C Repetitive avalanche energy L=0.1mH ±20 63 ID IDM Pulsed Drain Current Avalanche Current Units V 85 TC=100°C B Continuous Drain Current G Maximum 30 IDSM IAR 14 30 A EAR 112 mJ 100 PD TA=25°C 2.1 PDSM Junction and Storage Temperature Range W 50 W 1.3 TJ, TSTG -55 to 175 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Case C A Steady-State Alpha & Omega Semiconductor, Ltd. Steady-State RθJA RθJC Typ Max Units 19.6 25 °C/W 50 0.9 60 1.5 °C/W °C/W AOL1420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions Min ID=250μA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS= ±20V VDS=VGS ID=250μA VGS=10V, VDS=5V VGS=10V, ID=20A Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr Turn-Off DelayTime tD(off) tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max 1.8 1 5 100 3 1 85 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/μs IF=20A, dI/dt=100A/μs Units V TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Coss Crss Reverse Transfer Capacitance Gate resistance Rg Typ μA nA V A 2.9 4.4 4.4 106 0.72 3.7 5.5 5.5 3200 590 414 0.54 3840 63 33 8.6 17.6 12 15.5 40 14 34 30 76 40 nC nC nC nC ns ns ns ns 41 ns nC 1 85 0.7 mΩ mΩ S V A pF pF pF Ω A: The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev0: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 150 VDS=5V 125 50 10V ID(A) ID (A) 40 4.0V 100 75 125°C 30 25°C 20 50 3.5V 10 25 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 8 3.5 4 4.5 Normalized On-Resistance 1.6 7 6 VGS=4.5V 5 4 VGS=10V 3 2 ID=20A 1.4 VGS=10V VGS=4.5V 1.2 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 8 1.0E+02 125°C 1.0E+01 6 125°C 4 1.0E+00 IS (A) RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (mΩ) 2.5 ID=20A 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=20A 4000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10 Power (W) 100μs RDS(ON) limited 1ms 10ms 1 10 100 VDS (Volts) 1 D=T on/T T J,PK =T C+PDM.ZθJC.RθJC RθJA=1.5°C/W 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 400 200 0.1 0.1 600 DC T J(Max)=175°C T C=25°C 1 T J(Max)=175°C T C=25°C 800 100 ID (Amps) 10 1000 10μs ZθJC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 T on Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 T A=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L ⋅ ID BV − VDD 20 100 80 60 40 20 0 0.00001 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 100 80 80 Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 60 40 60 40 20 20 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) 175 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 1 0.1 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000