AOD494 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD494 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOD494 is Pb-free (meets ROHS & Sony 259 specifications). AOD494L is a Green Product ordering option. AOD494 and AOD494L are electrically identical. VDS (V) = 30V ID = 55A (VGS = 10V) RDS(ON) <11mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage T =25°C Continuous Drain C Current TC=100°C ID Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C TA=25°C A Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D A,D Maximum Junction-to-Ambient B Maximum Junction-to-Case Units V V A IDM 120 IAR 30 A EAR 135 63 31 4 2.6 -55 to 175 mJ PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. Maximum 30 ±12 55 39 RθJA RθJC Typ 15 41 2 W W °C Max 20 50 2.4 Units °C/W °C/W °C/W AOD494 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250μA, VGS=0V VDS=24V, VGS=0V gFS VSD IS VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 1 120 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/μs IF=20A, dI/dt=100A/μs Max Units 30 VDS=0V, VGS= ±12V VDS=VGS ID=250μA VGS=10V, VDS=5V VGS=10V, ID=20A Static Drain-Source On-Resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ V TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Min 1.6 1 5 0.1 2.5 uA μA V A 9 15.3 11 40 0.73 11 18 13.5 1210 330 85 1.2 1452 22 10 3.7 2.7 10 6.3 21 2.8 36 47 28 nC nC nC nC ns ns ns ns 45 ns nC mΩ mΩ 1.0 66 1.6 S V A pF pF pF Ω A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the120 device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev0: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V 6V VDS=5V 25 90 60 20 ID(A) ID (A) 4.5V 3.5V 125° 15 25°C 10 30 5 VGS=2.5V 0 0 0 1 2 3 4 1 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 2 12 Normalized On-Resistance RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics 15 VGS=4.5V 9 VGS=10V 6 VGS=10V 1.8 ID=20A 1.6 VGS=4.5 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 1.0E+01 120 ID=20A 125°C 1.0E+00 15 25°C IS (A) RDS(ON) (mΩ) 1.5 125°C 10 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 15 41 0.4 20 0.6 0.8 VSD (Volts) 50 Figure 6: Body-Diode Characteristics 1.0 AOD494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 Capacitance (pF) VGS (Volts) 8 VDS=15V ID=20A 6 4 2 1500 Ciss 1000 500 Coss Crss 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 140 10μs 100μ RDS(ON) limited 10.0 1m 1.0 DC 10m 0.1 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 120 Power (W) 100.0 ID (Amps) 5 TJ(Max)=175°C TC=25°C 100 80 60 40 1 VDS (Volts) 10 100 20 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc .RθJc RθJC=2.4°C/W 120 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 15 1 T 20 10 Pulse Width (s) 41 50 Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 AOD494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 TA=25°C 60 Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 20 50 40 30 20 10 0 0 0.000001 0.00001 0.0001 0.001 0 0.01 25 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 140 TJ(Max)=150°C TA=25°C 100 40 Power (W) Current rating ID(A) 120 20 80 60 40 20 0 0 25 50 75 100 125 150 0 0.001 175 T CASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 10 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note G) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order 120 D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 15 20 Pulse Width (s) 41 50 G) Figure 16: Normalized Maximum Transient Thermal Impedance (Note Alpha & Omega Semiconductor, Ltd. 100 1000