AOB405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Standard Product AOB405 is Pb-free (meets ROHS & Sony 259 specifications). AOB405L is a Green Product ordering option. AOB405 and AOB405L are electrically identical. VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A -12 IAR -12 A EAR 30 mJ -30 50 2.3 W 1.5 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V -12 TA=100°C G Repetitive avalanche energy L=0.1mH Maximum -40 RθJA RθJC Typ 11 45 2.5 Max 16 54 3 Units °C/W °C/W °C/W AOB405 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-10mA, V GS=0V -40 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 TJ=55°C -1.9 -3 V 40 48 60 75 VGS=-4.5V, ID=-8A 55 72 VDS=-5V, ID=-12A 16 Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA nA RDS(ON) Rg -5 ±100 VGS=-10V, ID=-12A Output Capacitance Units V -1 Zero Gate Voltage Drain Current Coss Max VDS=-32V, VGS=0V IDSS IS Typ A mΩ mΩ S -0.75 -1 V -12 A 657 pF VGS=0V, VDS=-20V, f=1MHz 143 pF 63 pF VGS=0V, VDS=0V, f=1MHz 6.5 Ω 14.1 nC VGS=-10V, VDS=-20V, ID=-12A 7 nC 2.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.1 nC tD(on) Turn-On DelayTime 8 ns tr Turn-On Rise Time 18 ns tD(off) Turn-Off DelayTime 24 ns tf Turn-Off Fall Time 18 ns trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs 23.2 Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 18.2 ns nC VGS=-10V, VDS=-20V, RL=1.7Ω, RGEN=3Ω A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOB405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -10V -5V 25 -6V VDS=-5V -4.5V ID=-10mA, V GS=0V 20 -4V 15 -ID(A) -ID (A) 20 15 -3.5V 10 10 125°C VGS=-3V 5 5 0 25°C 0 0 1 2 3 4 5 1 1.5 2 2.5 3 80 65 Normalized On-Resistance 70 RDS(ON) (mΩ) 4 4.5 5 1.80 75 VGS=-4.5V 60 55 50 45 VGS=-10V 40 35 30 0 5 10 15 20 VGS=-10V ID=-12A 1.60 1.40 VGS=-4.5V ID=-8A 1.20 1.00 0.80 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 150 1.0E+01 135 1.0E+00 ID=-12A 125°C 120 1.0E-01 105 90 -IS (A) RDS(ON) (mΩ) 3.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 1.0E-02 1.0E-03 75 1.0E-04 60 25°C 25°C 45 1.0E-05 30 1.0E-06 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOB405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=-15V ID=-12A ID=-10mA, V GS=0V Ciss 750 Capacitance (pF) -VGS (Volts) 8 6 4 500 Coss Crss 250 2 0 0 0 3 6 9 12 0 15 10 100.0 10µs 100µs 1ms 40 10ms 1.0 T J(Max)=175°C T A=25°C 160 Power (W) -ID (Amps) RDS(ON) limited 30 200 T J(Max)=175°C, T A=25°C 10.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics DC 120 80 40 0.1 0.1 1 10 0 0.0001 100 -VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T T J,PK =T A+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on Single Pulse 0.01 0.00001 0.0001 0.001 T 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOB405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 L⋅ ID = tIDA=-10mA, V =0V BV − VGS DD 12 10 8 T A=25°C 50 Power Dissipation (W) -ID(A), Peak Avalanche Current 14 40 30 20 10 0 6 0.00001 0.0001 0 0.001 25 14 60 12 50 10 100 125 150 175 T A=25°C 40 Power (W) Current rating -ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 8 6 30 20 4 10 2 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 1 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=54°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000