AOT412 N-Channel SDMOSTM Power Transistor General Description Features The AOT412 and AOT412L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. ID = 60A (VGS = 10V) RDS(ON) < 15.8mΩ (VGS = 10V) RDS(ON) < 19.4mΩ (VGS = 7V) VDS (V) =100V - RoHS Compliant - AOT412L is Halogen Free 100% UIS Tested! 100% R g Tested! TO-220 D G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TC=25°C Pulsed Drain Current C Continuous Drain Current A 140 8.2 IDSM TA=70°C V 44 IDM TA=25°C Units V 60 ID TC=100°C Maximum 100 ±25 A 6.6 Avalanche Current C IAR 47 A Repetitive avalanche energy L=0.1mH C EAR 110 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2.6 W 1.7 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 75 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 150 PD TC=100°C RθJA RθJC Typ 15 40 0.7 °C Max 18 48 1 Units °C/W °C/W °C/W www.aosmd.com AOT412 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=100V, VGS=0V 100 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) VDS=VGS ID=250µA 2.6 ID(ON) Gate Threshold Voltage On state drain current VGS=10V, VDS=5V 140 RDS(ON) Static Drain-Source On-Resistance 50 100 VGS=10V, ID=20A TJ=125°C VGS=7V, ID=20A Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A Units V TJ=55°C gFS Max 10 IDSS IS Typ 3.2 µA nA 3.8 V A 13.2 15.8 25 30 15.5 19.4 mΩ 1 V 60 A mΩ 30 0.65 S 2150 2680 3220 pF 180 260 340 pF 60 100 140 pF 0.5 1 1.5 Ω 36 45 54 nC 10 12 14 nC 14 17 20 nC 9 15 21 nC VGS=10V, VDS=50V, RL=5Ω, RGEN=3Ω 19 ns 16 ns 27 ns 10 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 22 29 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 67 96 125 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 0: Nov-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 10V VDS=5V 7.5V 120 80 7V 80 60 6.5V ID(A) ID (A) 100 60 40 6V 40 125°C 20 20 25°C VGS=5.5V 0 0 0 1 2 3 4 0 5 17 4 6 8 10 Normalized On-Resistance 2.6 16 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=7V 15 14 VGS=10V 13 12 2.4 VGS=10V ID=20A 2.2 2 17 5 2 10 1.8 1.6 1.4 VGS=7V ID=20A 1.2 1 0.8 11 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 33 1.0E+02 ID=20A 1.0E+01 40 125°C 23 IS (A) RDS(ON) (mΩ) 28 1.0E+00 125°C 25°C 1.0E-01 18 1.0E-02 13 25°C 1.0E-03 0.0 8 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3600 VDS=50V ID=20A 3200 Ciss 2800 Capacitance (pF) VGS (Volts) 8 6 4 2400 2000 1600 1200 800 2 Crss Coss 400 0 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 800 DC 1.0 100µs 1ms 10ms TJ(Max)=175°C TC=25°C 0.1 0.1 ZθJC Normalized Transient Thermal Resistance 17 5 2 10 600 400 200 1 10 VDS (Volts) 100 1000 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 TJ(Max)=175°C TC=25°C 10µs Power (W) ID (Amps) 100.0 0.0 0.01 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 1000 1000.0 10.0 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1°C/W 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 140 60 TA=25°C Power Dissipation (W) IAR(A) Peak Avalanche Current 70 50 40 TA=100°C 30 20 TA=150°C 10 TA=125°C 120 100 80 60 40 20 0 0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 175 10000 70 TA=25°C 60 1000 50 Power (W) Current rating ID(A) 150 TCASE (°C) Figure 13: Power De-rating (Note F) 40 30 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 150 0 175 ZθJA Normalized Transient Thermal Resistance 10 1 0 0 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 40 RθJA=48°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 120 Qrr 20 125ºC 80 Irm 60 20 5 10 15 20 25 S 30 25ºC 100 20 80 Qrr 60 125ºC 10 40 Irm 20 0 25ºC 200 400 600 800 0 1000 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 0.2 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 35 2 Is=20A 30 125ºC 1.5 25 Irm (A) Qrr (nC) 120 0.4 0 40 140 0.6 125ºC 20 trr (ns) 125ºC 25ºC 5 50 160 1.2 0.8 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 25ºC 1 10 30 180 1.4 trr 15 0 0 1.8 1.6 20 10 25ºC 40 125ºC trr (ns) 25ºC 140 100 25 40 160 2 di/dt=800A/µs S 125ºC Irm (A) di/dt=800A/µs 180 Qrr (nC) 30 50 200 trr 25ºC 1 15 S 25ºC 10 5 125º 0 0 200 400 600 800 S 220 0.5 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com AOT412 Gate Charge Test Circuit & W aveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs Rg 90% + Vdd DUT VDC - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vds Vdd www.aosmd.com