AP2305AGN Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -30V RDS(ON) 80mΩ ID - 3.2A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. G S The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 30 V ± 12 V 3 -3.2 A 3 -2.6 A Continuous Drain Current Continuous Drain Current 1,2 IDM Pulsed Drain Current -10 A PD@TA=25℃ Total Power Dissipation 1.38 W 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Linear Derating Factor Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 90 ℃/W 200731031 AP2305AGN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -30 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-3.2A - - 60 mΩ VGS=-4.5V, ID=-3.0A - - 80 mΩ VGS=-2.5V, ID=-2.0A - - 150 mΩ VGS=-1.8V, ID=-1.0A - - 250 mΩ Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.2 V gfs Forward Transconductance VDS=-5V, ID=-3.0A - 9 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= ± 12V - - ±100 nA ID=-3.2A - 10 18 nC VGS(th) o IGSS 2 VGS=0V, ID=-250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 1.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.6 - nC VDS=-15V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-3.2A - 15 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 21 - ns tf Fall Time RD=4.6Ω - 15 - ns Ciss Input Capacitance VGS=0V - 735 1325 pF Coss Output Capacitance VDS=-25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Source-Drain Diode Min. Typ. VSD Symbol Forward On Voltage2 Parameter IS=-1.2A, VGS=0V Test Conditions - - -1.2 V trr Reverse Recovery Time IS=-3.2A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 19 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. Max. Units AP2305AGN 36 40 o T A =25 C TA=150oC 32 -5.0V -4.0V 28 30 -4.0V 20 -3.0V 10 V G = -2.0V -ID , Drain Current (A) -ID , Drain Current (A) -5.0V 24 65mΩ 20 -3.0V 16 12 V G = -2.0V 8 4 0 0 0 1 2 3 4 5 6 7 8 9 0 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 300 1.8 I D = -1.0A T A =25 o C I D = -3.0A V GS = -4.5V 1.6 Normalized RDS(ON) RDS(ON) (mΩ ) 1 -V DS , Drain-to-Source Voltage (V) 200 100 1.4 1.2 1 0.8 0 0.6 0 2 4 6 8 10 12 -50 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 100 1.5 10 1 T j =25 o C -VGS(th) (V) -IS(A) T j =150 o C 1 0.5 0.1 0 0.01 0 0.4 0.8 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2305AGN 12 I D = -3.2A V DS = -24V 10 -VGS , Gate to Source Voltage (V) f=1.0MHz 10000 8 65mΩ Ciss C (pF) 1000 6 4 Coss Crss 100 2 0 10 0 2 4 6 8 10 12 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) DUTY=0.5 -ID (A) 10 1ms 1 10ms 0.1 100ms o T A =25 C Single Pulse 1s DC 0.01 0.2 0.1 0.1 0.05 PDM t 0.01 T Duty factor = t/T Peak T j = PDM x Rthja + Ta 0.01 Single pulse Rthja = 270℃ ℃/W 0.001 0.1 1 10 100 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q