APM2300A N-Channel Enhancement Mode MOSFET Features • Pin Description D 20V/6A , RDS(ON)=25mΩ(typ.) @ VGS=10V RDS(ON)=32mΩ(typ.) @ VGS=4.5V RDS(ON)=40mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G SOT-23 Package S Top View of SOT-23 Applications • D Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information S N-Channel MOSFET A P M 23 00 A Package Code A : S O T -23 O perating Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel H andling C ode T em p. R an ge Package Code A P M 2300A A : X - D ate C ode A 0 0X Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 ID* Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 20 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 1 www.anpec.com.tw APM2300A Absolute Maximum Ratings (Cont.) Symbol PD TJ Parameter Maximum Power Dissipation Rating TA=25°C 1.25 TA=100°C 0.5 Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Unit W 150 °C -55 to 150 °C 100 °C/W (TA = 25°C unless otherwise noted) Test Condition APM2300A Min. Typ. Max. Unit Static BV DSS Drain-Source Breakdown Voltage V GS =0V , IDS=250µA IDSS Zero Gate Voltage Drain Current V DS =16V , V GS =0V V GS(th) Gate Threshold Voltage V DS =V GS , IDS=250µA Gate Leakage Current V GS =±12V , V DS =0V IGSS R DS(ON) V SD a a Drain-Source On-state Resistance Diode Forward Voltage Dynamic b Qg Total Gate Charge Q gs Gate-Source Charge 20 V 1 0.5 0.7 1.0 V ±100 nA V GS =10V , I DS =6A 25 30 V GS =4.5V , IDS =3A 32 40 V GS =2.5V , IDS =2A 40 55 ISD=1.25A , V GS =0V 0.7 1.3 V DS =10V , IDS = 6A 10 12 V GS =4.5V 3.6 Q gd Gate-Drain Charge 2 Turn-on Delay Time 8 Tr Turn-on Rise Time V DD=10V , IDS =1A , 6 12 td(OFF) Turn-off Delay Time V GEN =4.5V , R G =0.2Ω 19 45 7 23 V GS =0V 550 Turn-off Fall Time C iss Input Capacitance C oss Output Capacitance C rss V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz 120 mΩ V nC td(ON) Tf µA 14 ns pF 80 Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 2 www.anpec.com.tw APM2300A Typical Characteristics Output Characteristics Transfer Characteristics 20 20 15 ID-Drain Current (A) ID-Drain Current (A) VGS=3,4.5,6,7,8V V GS=2V 10 VGS=1.5V 5 15 10 TJ=25°C 5 TJ=-55°C TJ=125°C V GS=1V 0 0 1 2 3 4 5 6 7 8 9 0 0.0 10 VDS - Drain-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) 1.00 0.75 0.50 0.25 0 25 50 75 2.5 0.6 0.5 VGS=2.5V 0.4 VGS=4.5V 0.3 0.2 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 2.0 0.7 IDS=250uA -25 1.5 On-Resistance vs. Drain Current 1.25 0.00 -50 1.0 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 0.5 0 2 4 6 8 10 ID - Drain Current (A) 3 www.anpec.com.tw APM2300A Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 2.00 ID=6A 0.08 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.09 On-Resistance vs. Junction Temperature 0.07 0.06 0.05 0.04 0.03 0.02 VGS=10V 1.75 ID=6A 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 6 7 0.00 -50 8 VGS - Gate-to-Source Voltage (V) -25 0 6 4 2 Ciss 500 375 250 Coss Crss 125 2 4 6 8 10 12 14 16 0 18 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 100 125 150 Frequency=1MHz 625 Capacitance (pF) VGS-Gate-Source Voltage (V) 750 VDS=10V ID=6A 0 75 Capacitance 8 0 50 TJ - Junction Temperature (°C) Gate Charge 10 25 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2300A Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 14 20 10 TJ=150°C Power (W) IS-Source Current (A) 12 10 TJ=25°C 8 6 4 2 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 VSD -Source-to-Drain Voltage (V) 1 10 100 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 0.01 1E-4 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 5 www.anpec.com.tw APM2300A Packaging Information SOT-23 D B 3 E H 2 1 S e A L A1 Dim C M illim et er s Inc he s A M in. 1. 0 0 M ax. 1. 3 0 M in. 0. 0 39 M ax. 0. 0 51 A1 0. 0 0 0. 1 0 0. 0 00 0. 0 04 B 0. 3 5 0. 5 1 0. 0 14 0. 0 20 C 0. 1 0 0. 2 5 0. 0 04 0. 0 10 D 2. 7 0 3. 1 0 0. 1 06 0. 1 22 E 1. 4 0 1. 8 0 0. 0 55 0. 0 71 e 1. 9 0 B SC H 2. 4 0 L 0. 3 7 Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 0. 0 75 B SC 3. 0 0 0. 0 94 0. 11 8 0. 0 01 5 6 www.anpec.com.tw APM2300A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2300A Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOT-23 A B 178±1 72 ± 1.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 C J 13.0 + 0.2 2.5 ± 0.15 8 T1 T2 P E 1.5± 0.3 W 8.0+ 0.3 - 0.3 8.4 ± 2 4 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 3.2± 0.1 1.4± 0.1 0.2±0.03 2.0 ± 0.1 3.15 ± 0.1 www.anpec.com.tw APM2300A Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.4 - May., 2003 9 www.anpec.com.tw