APM2312 N-Channel Enhancement Mode MOSFET Features • Pin Description D 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V 3 RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • • SOT-23 Package 2 G S Top View of SOT-23 D Applications • 1 Reliable and Rugged Power Management in Notebook Computer , G Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM2312 Package Code A : SOT-23 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM2312 A : X - Date Code M12X Absolute Maximum Ratings Symbol S N-Channel MOSFET (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 16 VGSS Gate-Source Voltage ±8 ID* Maximum Drain Current – Continuous 5 IDM Maximum Drain Current – Pulsed 15 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 1 www.anpec.com.tw APM2312 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) Rating TA=25°C 1.25 TA=100°C 0.5 W 150 °C -55 to 150 °C 100 °C/W Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol Parameter Unit (TA = 25°C unless otherwise noted) Test Condition APM2312 Min. Typ. Max. Unit Static BV DSS Drain-Source Breakdown Voltage V GS =0V , IDS=250µA IDSS Zero Gate Voltage Drain Current V DS =16V , VGS =0V V GS(th) Gate Threshold Voltage V DS =V GS , IDS=250µA Gate Leakage Current V GS =±8V , VDS=0V V GS =4.5V , IDS =5A 35 45 V GS =2.5V , IDS =4.5A 45 55 V GS =1.8V , IDS =4A 60 70 ISD=1.7A , VGS =0V 0.7 1.3 V DS =10V , IDS = 1A 10 12 V GS =4.5V , 1.9 IGSS Drain-Source On-state R DS(ON)a Resistance V SDa Diode Forward Voltage 16 0.5 V 0.7 1 µA 1 V ±100 nA mΩ V b Dynamic Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time Turn-off Delay Time td(OFF) Tf Turn-off Fall Time C iss Input Capacitance C oss Output Capacitance C rss Notes a b nC 1.8 17 33 V DD=10V , IDS =1A , 40 70 V GEN =4.5V , R G =0.2Ω 45 80 25 580 45 V GS =0V V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz 170 ns pF 100 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 2 www.anpec.com.tw APM2312 Typical Characteristics Output Characteristics Transfer Characteristics 12 12 VGS=2,3,4,5,6,7,8,9,10V 10 ID-Drain Current (A) ID-Drain Current (A) 10 8 6 VGS=1.5V 4 2 8 6 TJ=125°C 4 TJ=25°C 2 TJ=-55°C VGS=1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.08 1.75 1.50 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 0.06 0.05 VGS=2.5V 0.04 VGS=4.5V 0.03 0.02 0.01 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 0.07 0 3 6 9 12 ID - Drain Current (A) 3 www.anpec.com.tw APM2312 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 2.25 ID=5A 0.09 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.10 On-Resistance vs. Junction Temperature 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 VGS=4.5V ID=5A 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 6 7 0.00 -50 8 VGS - Gate-to-Source Voltage (V) -25 0 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Capacitance 5 1000 Frequency=1MHz VDS=10V ID=1A 4 800 Capacitance (pF) VGS-Gate-Source Voltage (V) 25 3 2 1 Ciss 600 400 Coss 200 Crss 0 0 2 4 6 8 10 0 12 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2312 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 12 10 10 TJ=150°C Power (W) IS-Source Current (A) 20 TJ=25°C 8 6 4 2 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 VSD -Source-to-Drain Voltage (V) 1 10 100 600 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.T JM-T A=P DMZ thJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 600 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 5 www.anpec.com.tw APM2312 Packaging Information SOT-23 D B 3 E H 2 1 S e A L A1 Dim C M illim et er s Inc he s A M in. 1. 0 0 M ax. 1. 3 0 M in. 0. 0 39 M ax. 0. 0 51 A1 0. 0 0 0. 1 0 0. 0 00 0. 0 04 B 0. 3 5 0. 5 1 0. 0 14 0. 0 20 C 0. 1 0 0. 2 5 0. 0 04 0. 0 10 D 2. 7 0 3. 1 0 0. 1 06 0. 1 22 E 1. 4 0 1. 8 0 0. 0 55 0. 0 71 e 1. 9 0 B SC H 2. 4 0 L 0. 3 7 Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 0. 0 75 B SC 3. 0 0 0. 0 94 0. 118 0. 0 01 5 6 www.anpec.com.tw APM2312 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2312 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOT-23 A B C J 178±1 60 ± 1.0 12.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 F0.1MIN 4.0 T1 P E 1.4 W 8.0+ 0.3 - 0.3 4.0 1.75 P1 Ao Bo Ko t 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03 2.5 ± 0.15 9.0 ± 0.5 T2 (mm) Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 8 www.anpec.com.tw APM2312 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - July., 2003 9 www.anpec.com.tw