APM3023NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS(ON)=15mΩ (typ.) @ VGS=10V RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant) D Applications • Power Management in Desktop Computer or G DC/DC Converters S N-Channel MOSFET Ordering and Marking Information Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM3023N Lead Free Code Handling Code Temp. Range Package Code APM3023N U : XXXXX - Date Code APM3023N XXXXX Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw APM3023NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 20 A TC=25°C 100 TC=100°C 60 TC=25°C 30* TC=100°C 20 TC=25°C 50 TC=100°C 20 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC 2.5 Thermal Resistance-Junction to Case A A W °C/W 2 Mounted on PCB of 1in Pad Area IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA TA=25°C 100 TA=100°C 60 TA=25°C 10 TA=100°C 4 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A A W °C/W Mounted on PCB of Minimum Footprint IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient TA=25°C 100 TA=100°C 60 TA=25°C 7 TA=100°C 5 TA=25°C 1.6 TA=100°C 0.6 75 A A W °C/W Note: * Current limited by bond wire. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 2 www.anpec.com.tw APM3023NU Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Test Condition APM3023NU Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance VGS=0V, IDS=250µA 30 V VDS=24V, VGS=0V 1 TJ=85°C VDS=VGS, IDS=250µA 30 1 1.5 VGS=±20V, VDS=0V µA 2 V ±100 nA VGS=10V, IDS=20A 15 20 VGS=4.5V, IDS=10A 22 28 ISD=15A, VGS=0V 0.7 1.3 VGS=0V,VDS=0V,F=1MHz 2.5 mΩ Diode Characteristics VSDa Diode Forward Voltage Dynamic Characteristics V b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time Qrr Body Diode Reverse Recovery Charge Trr Body Diode Reverse Recovery Time VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω IF=20A, dI/dt=100A/µs Ω 1040 pF 200 85 11 18 17 26 37 54 20 30 ns 12.1 22 Gate Charge Characteristicsb Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 30 VDS=15V, VGS=10V, IDS=20A 5.8 40 nC 3.8 a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 3 www.anpec.com.tw APM3023NU Typical Characteristics Power Dissipation Drain Current 35 60 30 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 10 25 20 15 10 5 o o 0 TC=25 C 0 20 40 0 60 80 100 120 140 160 180 TC=25 C,VG=10V 0 20 40 Tj - Junction Temperature Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 300 ID - Drain Current (A) 100 it Lim n) o s( Rd 1ms 10ms 10 100ms 1s DC 1 o TC=25 C 0.1 0.1 1 10 Rev. B.2 - Oct., 2005 2 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 60 80 100 120 140 160 180 Mounted on 1in pad o RθJA :50 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM3023NU Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 30 VGS=4,5,6,7,8,9,10V 27 35 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 24 21 18 15 3V 12 9 6 3 30 25 VGS=4.5V 20 VGS=10V 15 10 5 2V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 3 6 9 12 15 18 21 24 27 30 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 40 1.4 IDS =250µA Normalized Threshold Voltage 35 ID - Drain Current (A) 30 25 20 15 o Tj=125 C 10 o Tj=-55 C o Tj=25 C 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Rev. B.2 - Oct., 2005 1.0 0.8 0.6 0.4 0.2 -50 -25 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM3023NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 30 2.0 IDS = 20A 10 1.6 1.4 IS - Source Current (A) Normalized On Resistance 1.8 VGS =10V 1.2 1.0 0.8 0.6 0.4 0.2 o Tj=150 C o Tj=25 C 1 o 0.0 -50 -25 RON@Tj=25 C: 15mΩ 0 25 50 0.1 0.0 75 100 125 150 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VDS=15V ID = 10A VGS - Gate-source Voltage (V) 1250 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 1500 Ciss 1000 750 500 Coss 250 Crss 0 0.2 0 5 10 15 20 25 Rev. B.2 - Oct., 2005 6 4 2 0 30 0 4 8 12 16 20 24 28 32 QG - Gate Charge (nC) VDS - Drain-Source Voltage (V) Copyright ANPEC Electronics Corp. 8 6 www.anpec.com.tw APM3023NU Package Information TO-252 (Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 D1 A1 E1 Dim Millimeters Inches Min. Max. Min. Max. 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 A D1 E 5.2 REF 6.35 E1 0.205 REF 6.73 0.250 5.3 REF 0.265 0.209 REF e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 0.020 7 www.anpec.com.tw APM3023NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 8 www.anpec.com.tw APM3023NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 Description 245°C, 5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100%RH, 121°C -65°C~150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 D1 9 www.anpec.com.tw APM3023NU Carrier Tape(Cont.) T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 1.5± 0.25 4.0 ± 0.1 W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 10 www.anpec.com.tw