APM7312 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V SO-8 RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • • • S1 1 8 D1 Super High Dense Cell Design for Extremely G1 2 7 D1 Low RDS(ON) S2 3 6 D2 Reliable and Rugged G2 4 5 D2 SO-8 Package Top View Applications • D2 D2 D1 D1 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 G1 Ordering and Marking Information S2 S1 N-Channel MOSFET APM7312 Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel Handling Code Tem p. Range Package Code APM 7312 K : APM 7312 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 ID* Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 20 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw APM7312 Absolute Maximum Ratings (Cont.) Symbol PD TJ (TA = 25°C unless otherwise noted) Parameter Maximum Power Dissipation Rating TA=25°C 2.5 TA=100°C 1.0 Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient W 150 °C -55 to 150 °C 50 °C/W Maximum Junction Temperature TSTG Unit * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM7312 Min. Typ. Max. Unit Static BV DSS Drain-Source Breakdown Voltage V GS =0V , IDS=250µA IDSS Zero Gate Voltage Drain Current V DS =18V , V GS =0V V GS(th) Gate Threshold Voltage IGSS R DS(ON) a V SD a Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Dynamic b Qg Total Gate Charge Q gs Gate-Source Charge Q gd td(ON) Gate-Drain Charge Turn-on Delay Time V DS =V GS , IDS=250µA V GS =±16V , V DS =0V V GS =10V , IDS =6A 20 0.7 V 0.9 V ±100 nA V GS =4.5V , IDS =4A 45 54 V GS =2.5V , IDS =2A 110 120 ISD =1.7A , VGS =0V 0.7 1.3 V DS =10V , IDS = 6A 12 16 V GS =4.5V , 3 mΩ V nC 4.5 6 12 5 10 16 40 5 20 Tr Turn-on Rise Time Turn-off Delay Time V GEN =4.5V , R G =0.2Ω Tf C iss Turn-off Fall Time Input Capacitance V GS =0V 450 C oss Output Capacitance V DS =15V 100 C rss Reverse Transfer Capacitance Frequency=1.0MHz b 1.5 40 td(OFF) a µA 35 V DD =10V , IDS =1A , Notes 1 ns pF 60 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 2 www.anpec.com.tw APM7312 Typical Characteristics Output Characteristics Transfer Characteristics 20 20 VGS=4,5,6,7,8,9,10V 12 ID-Drain Current (A) ID-Drain Current (A) 16 V GS=3V 8 15 10 TJ=25°C 5 4 TJ=-55°C TJ=125°C V GS=2V 0 0 1 2 3 4 5 6 7 0 0.0 8 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.08 1.50 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.07 0.06 VGS=4.5V 0.05 VGS=10V 0.04 0.03 0.02 0.01 0.00 -50 -25 0 25 50 75 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 0 5 10 15 20 ID - Drain Current (A) 3 www.anpec.com.tw APM7312 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 2.00 ID=6A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.10 On-Resistance vs. Junction Temperature 0.08 0.06 0.04 0.02 VGS=4.5V 1.75 ID=6A 1.50 1.25 1.00 0.75 0.50 0.25 0.00 1 2 3 4 5 6 7 8 9 0.00 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 750 V DS =10V ID=6A 100 125 150 Frequency=1MHz 625 Capacitance (pF) VGS-Gate-Source Voltage (V) 75 Capacitance 4 3 2 1 0 0.0 50 TJ - Junction Temperature (°C) Gate Charge 5 25 500 Ciss 375 250 Coss Crss 125 2.5 5.0 7.5 10.0 12.5 0 15.0 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM7312 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 80 10 60 Power (W) IS-Source Current (A) 20 TJ=150°C 40 TJ=25°C 20 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 VSD -Source-to-Drain Voltage (V) 1 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 5 www.anpec.com.tw APM7312 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM7312 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM7312 Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 8 www.anpec.com.tw APM7312 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 9 www.anpec.com.tw