APM7314 N-Channel Enhancement Mode MOSFET Features • Pin Description SO-8 30V/6A , RDS(ON)=21mΩ(typ.) @ VGS=10V RDS(ON)=32mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SO-8 Package S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Applications • D1 D1 D2 D2 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering and Marking Information APM7314 Package Code K : SO-8 Temp. Range C : 0 to 70° C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM7314 K : APM7314 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 1 www.anpec.com.tw APM7314 Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating Unit V VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 * D I Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 24 PD Maximum Power Dissipation TA=25°C 1.6 W TA=100°C 0.625 W 150 °C -55 to 150 °C 80 °C/W TJ Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient A * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM7314 Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS RDS(ON)a VSDa Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 VGS=0V , IDS=250µA 30 V VDS=24V , VGS=0V 1 VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA 5 1 3 V nA VGS=±20V , VDS=0V VGS=10V , IDS=3.5A 21 ±100 24 VGS=5V , IDS=2A 32 35 ISD=2A , VGS=0V 2 0.6 µA 1.1 mΩ V www.anpec.com.tw APM7314 Electrical Characteristics Cont. Symbol Parameter Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time (TA = 25°C unless otherwise noted) Test Condition VDS=15V , IDS= 10A VGS=5V , Tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGEN=10V , RG=6Ω Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Min. Typ. Max. 15 20 Unit nC 5.8 3.8 VDD=15V , IDS=2A , Tf APM7314 VGS=0V 11 18 17 26 37 54 20 30 ns 1200 VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz 220 pF 100 Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 3 www.anpec.com.tw APM7314 Typical Characteristics Output Characteristics Transfer Characteristics 40 30 IDS-Drain Current (A) IDS-Drain Current (A) VDS=10V VGS=4,4.5,6,8,10V 25 20 15 VGS=3.5V 10 V GS=3V 5 0 30 20 TJ=25°C TJ=125°C 10 VGS=2.5V 0 1 2 3 4 5 6 7 8 9 0 1.0 10 1.5 VDS-Drain-to-Source Voltage (V) 2.0 2.5 3.0 3.5 4.0 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.050 1.2 IDS=250µA 0.045 RDS(ON)-On-Resistance (Ω) VGS(th)-Variance (V) TJ=-55°C 1.0 0.8 0.6 0.040 VGS=4.5V 0.035 0.030 VGS=10V 0.025 0.020 0.015 0.010 0.005 0.4 -50 -25 0 25 50 75 100 125 0.000 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 0 5 10 15 20 25 30 IDS-Drain Current (A) 4 www.anpec.com.tw APM7314 Typical Characteristics Cont. On-Resistaence vs. Junction Temperature RDS(ON)-On Resistance (Ω) (Normalized) On-Resistance vs. Gate-to-Source Voltage 0.050 IDS=3.5A RDS (ON) - On-Resistance (Ω) 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 2 3 4 5 6 7 8 9 10 VGS=10V IDS=3.5A 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge Capacitance Characteristics 150 2000 10 VDS=15V IDS=10A Ciss 1000 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) 1.6 6 4 2 500 Coss Crss 100 Frequency=1MHz 0 0 5 10 15 20 25 0.1 30 10 30 VDS-Drain-to-Source Voltage (V) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 1 5 www.anpec.com.tw APM7314 Typical Characteristics Cont. Single Pulse Power Source-Drain Diode Forward Voltage 100 42 Rthjc = 2 °C/W 40 39 10 1 TJ=125°C Power (W) ISD-Source Current (A) 41 TJ=-55°C 38 37 36 35 TJ=25°C 0.1 0.0 0.2 0.4 0.6 0.8 34 1.0 1.2 33 -50 1.4 VSD-Source to Drain Voltage Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 -25 0 25 50 75 100 125 150 Time (sec) 6 www.anpec.com.tw APM7314 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 1. 27B S C 0. 50B S C 8° 8° 7 www.anpec.com.tw APM7314 Physical Specifications Terminal Material Lead Solderability Packaging Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 2500 devices per reel Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C 10 –20 seconds Time within 5°C of actual peak temperature Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 8 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM7314 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 W Bo F Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 9 www.anpec.com.tw 9 APM7314 Cover Tape Dimensions Carrier Width 12 Cover Tape Width 9.3 (mm) Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 10 www.anpec.com.tw