APM9930/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features • Pin Description N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V • S1 1 8 D1 S1 1 8 D G1 2 7 D1 G1 2 7 D S2 3 6 D2 S2 3 6 D G2 4 5 D2 G2 4 5 D P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • APM9930C APM9930 SO-8 SO-8 D1 D D1 Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G1 G1 SO-8 Package S1 S1 N-Channel MOSFET Applications • G2 S2 N- and P-Channel MOSFET S2 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 D2 D2 P-Channel MOSFET Ordering and Marking Information APM9930/C Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM9930/C K : APM9930/C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 1 www.anpec.com.tw APM9930/C Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N-Channel P-Channel VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±12 ±12 ID* Maximum Drain Current – Continuous 15 -5 IDM Maximum Drain Current – Pulsed 30 -10 TA=25°C 2.5 2.5 PD Maximum Power Dissipation TA=100°C 1.0 1.0 TJ Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Unit V A W 150 °C -55 to 150 °C 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM9930/C Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current N-Ch VGS=0V , IDS=250µA 20 P-Ch -20 VDS=18V , VGS=0V N-Ch 1 VDS=-18V , VGS=0V P-Ch -1 VDS=VGS , IDS=250µA N-Ch 0.6 1.3 VDS=VGS , IDS=-250µA P-Ch -0.6 -1.3 VGS=±12V , VDS=0V N-Ch ±100 VGS=±10V , VDS=0V P-Ch ±100 VGS=10V , IDS=15A VGS=4.5V , IDS=5A RDS(ON)a 15 17 20 VGS=2.5V , IDS=2A 25 30 Resistance VGS=-10V , IDS=-5A 60 70 72 80 98 105 VGS=-2.5V , IDS=-1A a 12 Drain-Source On-state VGS=-4.5V , IDS=-3.2A Notes N-Ch V P-Ch µA V nA mΩ : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 2 www.anpec.com.tw APM9930/C Electrical Characteristics (Cont.) Symbol VSDa Parameter Diode Forward Voltage (TA = 25°C unless otherwise noted) APM9930/C Test Condition Min. Typ. Max. ISD=5A , V GS=0V N-Ch 0.6 1.3 ISD=-2A , V GS=0V P-Ch -0.6 -1.3 N-Channel N-Ch 14 22 VDS=10V , IDS= 6A P-Ch 6.8 16 VGS=4.5V N-Ch 5 P-Channel P-Ch 3.6 VDS=-10V , IDS=-1A N-Ch 2.8 VGS=-4.5V P-Ch 1.08 N-Channel N-Ch 6 12 VDD=10V , IDS=1A , P-Ch 21 42 VGEN=4.5V , RG=10Ω N-Ch 5 10 P-Ch 45 85 P-Channel N-Ch 16 40 VDD=-10V , IDS=-1A , P-Ch 36 80 VGEN=-4.5V , RG =10Ω N-Ch 5 20 P-Ch 20 40 N-Ch 1225 P-Ch 495 N-Ch 330 P-Ch 130 N-Ch 220 P-Ch 60 Unit V Dynamica Qg Q gs Q gd td(ON) Tr Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time td(OFF) Tf Turn-off Delay Time Turn-off Fall Time Ciss Input Capacitance VGS=0V Coss Output Capacitance VDS=15V Frequency=1.0MHz Crss Reverse Transfer Capacitance nC ns pF Notes a : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 3 www.anpec.com.tw APM9930/C Typical Characteristics N-Channel Output Characteristics Transfer Characteristics 20 20 VGS=3,4,5,6,7,8,9,10V ID-Drain Current (A) ID-Drain Current (A) VGS=2.5V 16 12 8 V GS=2V 15 10 TJ=125°C 5 4 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0 25 50 75 2.5 3.0 0.025 0.020 VGS=4.5V 0.015 V GS=10V 0.010 0.005 0.000 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 2.0 0.030 IDS=250uA -25 1.5 On-Resistance vs. Drain Current 1.50 0.00 -50 1.0 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature VGS(th)-Threshold Voltage (V) (Normalized) TJ=-55°C TJ=25°C 0 4 8 12 16 20 ID - Drain Current (A) 4 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 2.0 ID=15A 0.14 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.16 On-Resistance vs. Junction Temperature 0.12 0.10 0.08 0.06 0.04 0.02 0.00 VGS=10V ID=15A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 1 2 3 4 5 6 7 8 9 0.4 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 1800 V DS=10V ID=6A Frequency=1MHz 1500 8 Capacitance (pF) VGS-Gate-Source Voltage (V) 50 TJ - Junction Temperature (°C) Gate Charge 10 25 6 4 Ciss 1200 900 600 Coss 2 300 Crss 0 0 5 10 15 20 25 0 30 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) N-Channel Single Pulse Power 20 80 10 70 60 TJ=150°C Power (W) IS-Source Current (A) Source-Drain Diode Forward Voltage TJ=25°C 1 50 40 30 20 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 1.2 0.1 VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 6 www.anpec.com.tw APM9930/C Typical Characteristics P-Channel Output Characteristics Transfer Characteristics 10 10 -VGS=4,5,6,7,8,9,10V 6 -ID-Drain Current (A) -ID-Drain Current (A) 8 -V GS=3V 4 TJ=25°C TJ=125°C TJ=-55°C 6 4 2 2 0 8 0 2 4 6 8 0 10 0 1 -VDS - Drain-to-Source Voltage (V) 4 5 On-Resistance vs. Drain Current 1.50 0.10 RDS(ON)-On-Resistance (Ω) -IDS=250uA -VGS(th)-Threshold Voltage (V) (Normalized) 3 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.25 1.00 0.75 0.50 0.25 0.00 -50 2 0.09 0.08 -VGS=4.5V 0.07 -VGS=10V 0.06 0.05 0.04 -25 0 25 50 75 0.03 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 0 1 2 3 4 5 6 -ID - Drain Current (A) 7 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1.8 0.50 -ID=5A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 2 3 4 5 6 7 8 9 1.6 -VGS=10V -ID=5A 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Capacitance 10 700 -V DS=10V -ID=1A Frequency=1MHz 600 8 Capacitance (pF) -VGS-Gate-Source Voltage (V) 25 6 4 Ciss 500 400 300 200 2 Coss 100 Crss 0 0 2 4 6 8 10 12 0 14 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 0 5 10 15 20 -VDS - Drain-to-Source Voltage (V) 8 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage Single Pulse Power 80 60 Power (W) -IS-Source Current (A) 10 1 TJ=150°C TJ=25°C 0.1 40 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 9 www.anpec.com.tw APM9930/C Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 1. 27B S C 0. 50B S C 8° 8° 10 www.anpec.com.tw APM9930/C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 11 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9930/C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 12 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM9930/C Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 13 www.anpec.com.tw