600V
16A
APT6040BVFR
Ω
0.40Ω
APT6040SVFR
APT6040BVFRG*APT6040SVFRG*
*G
Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V® FREDFET
BVFR
D3PAK
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-247
SVFR
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• FAST RECOVERY BODY DIODE
D
G
• TO-247 or Surface Mount D3PAK Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6040B_SVFR(G)
UNIT
600
Volts
Drain-Source Voltage
16
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
250
Watts
Linear Derating Factor
2.0
W/°C
PD
TJ,TSTG
1
64
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
16
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
960
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 8A)
TYP
MAX
UNIT
Volts
0.400
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
3-2006
Characteristic / Test Conditions
050-7270 Rev B
Symbol
APT6040B_SVFR(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
2600
3120
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
305
425
Reverse Transfer Capacitance
f = 1 MHz
125
180
Crss
Qg
3
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VGS = 10V
115
170
VDD = 300V
15
25
ID = 16A @ 25°C
52
75
VGS = 15V
10
20
VDD = 300V
9
18
ID = 16A @ 25°C
38
50
RG = 1.6Ω
6
12
TYP
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
IS
ISM
MIN
16
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
64
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -16A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -16A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -16A, di/dt = 100A/µs)
Tj = 25°C
1.9
Tj = 125°C
6
IRRM
Peak Recovery Current
(IS = -16A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
26
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.50
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
40
0.5
0.2
0.1
0.05
0.01
0.005
0.02
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7270 Rev B
3-2006
D=0.5
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 7.50mH, RG = 25Ω, Peak IL = 16A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID16A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
24
5.5V
18
12
5V
6
4.5V
4V
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
18
12
TJ = +125°C
6
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
12
8
4
5.5V
18
12
5V
6
4.5V
4V
1.5
NORMALIZED TO
V
= 10V @ 8A
GS
1.4
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
6
12
18
24
30
36
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
GS
-50
1.2
= 8A
= 10V
2.0
1.5
1.0
0.5
0.0
-50
0.95
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
3-2006
V
D
1.00
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7270 Rev B
I
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
2.5
1.10
0.90
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
VGS=7V, 10V
24
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
16
0
6V
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
30
VGS=15V
0
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
24
APT6040B_SVFR(G)
30
VGS=6V, 7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
30
10µS
OPERATION HERE
LIMITED BY RDS (ON)
5,000
100µS
10
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
50
1mS
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.5
D
50
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
= 8A
VDS=120V
16
Crss
50
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Coss
500
100
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
1,000
DC
0.1
VDS=300V
12
VDS=480V
8
4
0
APT6040B_SVFR(G)
10,000
100
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
TJ =+150°C
10
TJ =+25°C
5
1
.5
.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
D PAK (SVFR) Package Outline
e1 SAC: Tin, Silver, Copper
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
TO-247 (BVFR) Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
4.50 (.177) Max.
3-2006
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-7270 Rev B
13.41 (.528)
13.51(.532)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated