D
TO-247
G
S
POWER MOS IV
®
APT8075BN 800V
13.0A 0.75Ω
APT8090BN 800V
12.0A 0.90Ω
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T C = 25°C unless otherwise specified.
MAXIMUM RATINGS
APT
8075BN
APT
8090BN
UNIT
Drain-Source Voltage
800
800
Volts
ID
Continuous Drain Current @ TC = 25°C
13
12
IDM
Pulsed Drain Current
56
48
V GS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
310
Watts
Linear Derating Factor
2.48
W/°C
Symbol
V DSS
PD
TJ,TSTG
TL
Parameter
Amps
1
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
V GS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
On State Drain Current
APT8075BN
800
APT8090BN
800
APT8075BN
13
APT8090BN
12
TYP
MAX
UNIT
Volts
2
(VDS > ID(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
MIN
2
Amps
APT8075BN
0.75
APT8090BN
0.90
Ohms
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, I D = 1.0mA)
2
µA
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
R θJA
Junction to Ambient
MIN
TYP
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-8007 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8075/8090BN
Characteristic
Test Conditions
TYP
MAX
V GS = 0V
2410
2950
VDS = 25V
370
520
120
180
Ciss
Input Capacitance
C oss
Output Capacitance
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Q gs
3
VGS = 10V
88
130
VDD = 0.5 VDSS
8.9
13
ID = ID [Cont.] @ 25°C
44
67
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td (on)
Turn-on Delay Time
tr
VGS = 15V
13
27
VDD = 0.5 VDSS
18
36
ID = ID [Cont.] @ 25°C
62
94
R G = 1.8Ω
24
48
TYP
MAX
Rise Time
td (off)
Turn-off Delay Time
tf
MIN
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
MIN
APT8075BN
13
APT8090BN
12
APT8075BN
56
APT8090BN
48
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
1
V SD
Diode Forward Voltage
2
t
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
rr
Q rr
(VGS = 0V, IS = -ID [Cont.])
UNIT
Amps
1.3
Volts
656
1200
ns
6.2
12
µC
TYP
MAX
UNIT
SAFE OPERATING AREA CHARACTERISTICS
Symbol
Characteristic
Test Conditions / Part Number
MIN
SOA1
Safe Operating Area
V DS = 0.4 VDSS , IDS = PD / 0.4 VDSS, t = 1 Sec.
310
SOA2
Safe Operating Area
IDS = I D [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
310
ILM
Inductive Current Clamped
APT8075BN
56
APT8090BN
48
Watts
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
θ JC
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.01
PDM
0.02
0.01
0.005
t1
t2
SINGLE PULSE
Z
050-8007 Rev C
, THERMAL IMPEDANCE (°C/W)
1.0
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT8075/8090BN
V
=6V &10V
GS
16
5.5V
V
ID, DRAIN CURRENT (AMPERES)
12
5V
8
4.5V
4
4V
8
4.5V
4
4V
0
0
2
12
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE
V > I (ON) x R (ON)MAX.
DS D
DS
230µ SEC. PULSE TEST
T = +25°C
J
T = +125°C
J
12
8
4
T = +125°C
J
T = +25°C
J
T = -55°C
J
0
0
2
4
6
8
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
12
APT8075BN
8
APT8090BN
4
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.0
V
GS
V
=10V
GS
= 10V @ 0.5 I [Cont.]
D
V =20V
GS
1.5
1.0
0.5
0.0
0
10
20
30
40
I , DRAIN CURRENT (AMPERES)
D
FIGURE 5, R (ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
T = 25°C
J
2µ SEC. PULSE TEST
NORMALIZED TO
DS
16
0
2.5
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
16
5.5V
5V
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
T = -55°C
J
6V
12
0
20
=10V
GS
1.2
1.0
0.8
0.6
0.4
-50
0.0
-50 -25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
Page 146
050-8007 Rev C
ID, DRAIN CURRENT (AMPERES)
16
APT8075/8090BN
APT8075BN
60
10,000
10µS
OPERATION HERE
LIMITED BY R (ON)
C
C, CAPACITANCE (pF)
100µS
DS
APT8075BN
APT8090BN
10
1mS
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
D
I , DRAIN CURRENT (AMPERES)
APT8090BN
DC
, REVERSE DRAIN CURRENT (AMPERES)
D
=80V
16
V
DS
=160V
V
DS
=400V
12
8
4
DR
0
I
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = I [Cont.]
DS
C
oss
C
rss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
V
1,000
10
1
5 10
50 100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
iss
100
50
20
T = +150°C
J
T = +25°C
J
10
5
2
1
0
0.5
1.0
1.5
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
050-8007 Rev C
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)