APTDF30H1201G Fast Diode Full Bridge Power Module 3 4 Application CR1 1 • • • • 2 Features CR3 5 6 CR2 7 VRRM = 1200V IC = 30A @ Tc = 80°C CR4 8 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers • • • • • • • 9 10 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration Benefits • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 1200 V TC = 25°C 43 TC = 80°C TJ = 45°C 30 A 210 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF30H1201G – Rev 0 Symbol VR VRRM August, 2007 Absolute maximum ratings APTDF30H1201G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 30A IF = 60A Tj = 125°C IF = 30A Tj = 25°C VR = 1200V Tj = 125°C Min Typ 2.6 3.2 1.8 Max 3.1 V 100 500 VR = 200V Unit 36 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 30A VR = 800V di/dt = 200A/µs IF = 30A VR = 800V di/dt=1000A/µs Min Typ Tj = 25°C 300 Tj = 125°C 380 Tj = 25°C Tj = 125°C 360 1700 Tj = 25°C 4 Tj = 125°C 8 Tj = 125°C Max Unit ns nC A 160 ns 2550 nC 28 A Thermal and package characteristics Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 To heatsink M4 Max 1.2 175 125 100 4.7 80 Unit °C/W V °C N.m g August, 2007 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ www.microsemi.com 2-4 APTDF30H1201G – Rev 0 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDF30H1201G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 500 TJ=125°C VR=800V 400 300 45 A 200 30 A 15 A 100 0 0 4.0 200 TJ=125°C VR=800V 30 A 2 15 A 1 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 800 1000 1200 30 30 A TJ=125°C VR=800V 25 15 A 20 45 A 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 200 Max. Average Forward Current vs. Case Temp. 50 160 Duty Cycle = 0.5 TJ=175°C 40 120 80 30 August, 2007 IF(AV) (A) C, Capacitance (pF) 45 A 3 0 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 4 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 20 10 40 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) www.microsemi.com 3-4 APTDF30H1201G – Rev 0 IF, Forward Current (A) 80 APTDF30H1201G SP1 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF30H1201G – Rev 0 August, 2007 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com