BCDSEMI AT2042K6

Data Sheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.5pF
AT2042
General Description
Features
BCD ITVS (Integrated Transient Voltage Suppression)
devices are designed and built using a BCD
proprietary process based on BCD standard
technology. These devices integrate the various diodes,
transistors and resistors required to build these ITVS
products. These diodes and transistors feature low
parasitic resistance and the diodes also exhibit low
capacitance. Using these devices, BCD is able to
design voltage clamping products where low
capacitance associated with low dynamic resistance is
required.
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Low Clamping Voltage:
Typical 9V at 10A 100ns, TLP, I/O to VSS
11V at 10A 8μs/20μs, I/O to VSS
IEC 61000-4-2: ±30kV (I/O to VSS, Air)
±30kV (I/O to VSS, Contact)
IEC 61000-4-5: ±10A (I/O to VSS)
Input Capacitance from I/O to VSS: 1.2pF
TLP Dynamic Resistance, I/O to VSS: 0.25Ω
Monolithic Silicon Technology
Application
The BCD AT2042 is a general purpose, high
performance and low cost device suitable for
protecting high speed data interfaces. The AT2042 is a
unique design integrating low capacitance steering
diodes and a clamping cell, specially created to protect
sensitive components connected to data and
transmission lines.
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VGA
USB 2.0 Power/Data Lines Protection
IEEE 1394
Laptop and Personal Computers
Flat Panel Displays
Video Graphics Cards
SIM Ports
The AT2042 is available in SOT-23-6 package. This
package allows simple and optimal placement in
existing high-speed PCB layout.
SOT-23-6
Figure 1. Package Type of AT2042
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.5pF
AT2042
Pin Configuration
K6 Package
(SOT-23-6)
Pin 1 Mark
1
6
2
5
3
4
Figure 2. Pin Configuration of AT2042 (Top View)
Circuit Diagram
Figure 3. Circuit Diagram of AT2042
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.5pF
AT2042
Ordering Information
AT2042 A
-
A
Circuit Type
G1: Green
Package
K6: SOT-23-6
TR: Tape & Reel
5.0: Fixed Output 5.0V
Package
Temperature
Range
SOT-23-6
-55 to 85°C
Part Number
AT2042K6-5.0TRG1
Marking ID
GJR
Packing Type
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Peak Pulse Current (tp 8μs/20μs) , I/O to VSS
IPP(I/O-VSS)
±10
A
5.5
V
Operating Voltage (DC)
IEC61000-4-2 ESD (Air)
I/O to VSS, VCC
Floating
±30
kV
IEC61000-4-2 ESD (Contact)
I/O to VSS, VCC
Floating
±30
kV
IEC61000-4-5 (Lightning)
I/O to VSS
10
A
120
W
260
ºC
Operating Temperature
-55 to 85
ºC
Storage Temperature
-55 to 150
ºC
Lead Temperature (Soldering, 10sec)
TLEAD
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.5pF
AT2042
Electrical Characteristics
TA=25ºC, unless otherwise specified.
Parameter
Symbol
Working Voltage, I/O to VSS
Channel Leakage Current
Reverse Breakdown Voltage, I/O to VSS
Holding Voltage
Clamping Voltage (Lightning)
I/O to VSS
(IEC61000-4-5)
Trigger Voltage
I/O to VSS
ESD Clamping Voltage
I/O to VSS
Differential
Clamping
I/O to VSS
Resistance
Channel Input Capacitance
Conditions
Min
Typ
-0.7
IR
VBR
VH
VCC=5V,VSS=0V
IBV=1mA
Unit
5.5
1
V
μA
V
V
5.5
5.5
At 10A
11
At 10A, TLP, 100ns
9
9
VTRIG
V
9.5
V
V
Ω
0.25
RDIFF-F
I/O to VSS
Max
VI/O=2.5V,
f=1MHz
CI/O
VSS=0V,
1.2
1.5
pF
Typical Performance Characteristics
TA=25°C, unless otherwise specified.
10
Current from I/O to VSS (A)
BV, Trigger Voltage, Holding Voltage (V)
8.5
8.0
7.5
7.0
6.5
BV
VTRIG
6.0
4
2
0
-40
-20
0
20
40
60
80
100
120
0
140
o
Temperature ( C)
1
2
3
4
5
6
7
8
9
10
Voltage from I/O to VSS (V)
Figure 4. BV, Trigger Voltage, Holding Voltage
vs. Temperature
Aug. 2012
6
VH
5.5
5.0
-60
8
Figure 5. Current from I/O to VSS
vs. Voltage from I/O to VSS
Rev. 1.1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.5pF
AT2042
Typical Performance Characteristics (Continued)
TA=25°C, unless otherwise specified.
12
2.0
1.8
Input Capacitance (pF)
Clamping Voltage (V)
11
10
9
8
IEC 61000-4-5 (Lightning)
7
1.6
o
f=1MHz, TA=25 C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
6
1
2
3
4
5
6
7
8
9
10
0.0
0.0
11
Current from I/O to VSS (8μs/20μs) (A)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Input Voltage (V)
Figure 6. Clamping Voltage
vs. Current from I/O to VSS (8μs/20μs)
Figure 7. Input Capacitance vs. Input Voltage
VCLAMPING=11.2V
2V/div
Current
Waveform,
(Surge, 8x20 μs,
IPP=10.2A)
2A/div
Time
10μs/div
Figure 8. Waveform of I/O to VSS (Positive)
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.5pF
AT2042
Mechanical Dimensions
SOT-23-6
Unit:
0°
2.820(0.111)
8°
3.020(0.119)
0.200(0.008)
0.300(0.012)
0.400(0.016)
6
mm(inch) M I N
mm(inch) MAX
5
4
2
3
0.300(0.012)
0.600(0.024)
Pin 1 Mark
1
0.700(0.028)REF
0.950(0.037)TYP
0.000(0.000)
0.150(0.006)
1.800(0.071)
2.000(0.079)
0.100(0.004)
0.200(0.008)
0.900(0.035) 1.450(0.057)
MAX
1.300(0.051)
Aug. 2012
Rev. 1.1
BCD Semiconductor Manufacturing Limited
6
BCD Semiconductor Manufacturing Limited
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