Features • Low-Voltage and Standard-Voltage Operation • • • • • • – 5.0 (VCC = 4.5V to 5.5V) – 2.7 (VCC = 2.7V to 5.5V) – 2.5 (VCC = 2.5V to 5.5V) 3-Wire Serial Interface 2 MHz Clock Rate (5V) Compatibility Self-Timed Write Cycle (10 ms max) High Reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years – ESD Protection: > 4,000V Automotive Grade and Extended Temperature Devices Available 8-Pin PDIP, 8-Pin JEDEC SOIC, and 8-Pin TSSOP Packages 3-Wire Serial EEPROM 1K (64 x 16) Description The AT93C46A provides 1024 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 64 words of 16 bits each. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The AT93C46A is available in space saving 8-pin PDIP, 8-pin JEDEC, and 8-Pin TSSOP packages. The AT93C46A is enabled through the Chip Select pin (CS), and accessed via a 3wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SK). Upon receiving a READ instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO. The WRITE cycle is completely selftimed and no separate ERASE cycle is required before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE state. When CS is brought “high” following the initiation of a WRITE cycle, the DO pin outputs the READY/BUSY status of the part. 8-Pin PDIP Pin Configurations Pin Name Function CS Chip Select SK Serial Data Clock DI Serial Data Input DO Serial Data Output GND Ground VCC Power Supply NC No Connect DC Don’t Connect AT93C46A CS SK DI DO 1 2 3 4 8 7 6 5 VCC DC NC GND 3-Wire, 1K Serial E2PROM 8-Pin SOIC CS SK DI DO 1 2 3 4 8 7 6 5 VCC DC NC GND 8-Pin TSSOP CS SK DI DO 1 2 3 4 8 7 6 5 VCC DC NC GND Rev. 0539C–07/98 1 The AT93C46A is available in 4.5V to 5.5V, 2.7V to 5.5V, and 2.5V to 5.5V versions. Absolute Maximum Ratings* Operating Temperature .................................. -55°C to +125°C *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Storage Temperature ..................................... -65°C to +150°C Voltage on Any Pin with Respect to Ground .....................................-1.0V to +7.0V Maximum Operating Voltage........................................... 6.25V DC Output Current........................................................ 5.0 mA Block Diagram Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted). Test Conditions Max Units Conditions COUT Output Capacitance (DO) 5 pF VOUT = 0V CIN Input Capacitance (CS, SK, DI) 5 pF VIN = 0V Note: 2 1. This parameter is characterized and is not 100% tested. AT93C46A AT93C46A DC Characteristics Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.5V to +5.5V, TAC = 0°C to +70°C, VCC = +2.5V to +5.5V (unless otherwise noted). Symbol Parameter VCC1 Supply Voltage VCC2 Test Condition Min Max Units 1.8 5.5 V Supply Voltage 2.5 5.5 V VCC3 Supply Voltage 2.7 5.5 V VCC4 Supply Voltage 4.5 5.5 V ICC Supply Current VCC = 5.0V Typ READ at 1.0 MHz 0.5 2.0 mA WRITE at 1.0 MHz 0.5 2.0 mA ISB1 Standby Current VCC = 2.5V CS = 0V 14.0 20.0 µA ISB2 Standby Current VCC = 2.7V CS = 0V 14.0 20.0 µA ISB3 Standby Current VCC = 5.0V CS = 0V 35.0 50.0 µA IIL Input Leakage VIN = 0V to VCC 0.1 1.0 µA IOL Output Leakage VIN = 0V to VCC 0.1 1.0 µA VIL1(1) VIH1(1) Input Low Voltage Input High Voltage 4.5V ≤ VCC ≤ 5.5V -0.6 2.0 0.8 VCC + 1 V VIL2(1) VIH2(1) Input Low Voltage Input High Voltage 1.8V ≤ VCC ≤ 2.7V -0.6 VCC x 0.7 VCC x 0.3 VCC + 1 V VOL1 VOH1 Output Low Voltage Output High Voltage 4.5V ≤ VCC ≤ 5.5V 0.4 V VOL2 VOH2 Output Low Voltage Output High Voltage 1.8V ≤ VCC ≤ 2.7V Note: IOL = 2.1 mA IOH = -0.4 mA 2.4 V IOL = 0.15 mA IOH = -100 µA 0.2 VCC - 0.2 V V 1. VIL min and VIH max are reference only and are not tested. AC Characteristics Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted). Symbol Parameter Test Condition Min Typ Max Units fSK SK Clock Frequency 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 0 0 0 0 2 1 0.5 0.25 MHz tSKH SK High Time 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 250 250 500 1000 ns tSKL SK Low Time 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 250 250 500 1000 ns tCS Minimum CS Low Time 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 250 250 500 1000 ns 3 AC Characteristics (Continued) Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted). Symbol Parameter tCSS Test Condition CS Setup Time Min Typ Max Units Relative to SK 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 50 50 100 200 ns 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 100 100 200 400 ns 0 ns 100 100 200 400 ns tDIS DI Setup Time Relative to SK tCSH CS Hold Time Relative to SK Relative to SK 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V AC Test 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 250 250 500 1000 ns AC Test 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 250 250 500 1000 ns CS to Status Valid AC Test 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 250 250 500 1000 ns tDF CS to DO in High Impedance AC Test CS = VIL 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 100 100 200 400 ns 10 ms tWP Write Cycle Time Endurance(1) 5.0V, 25°C, Page Mode tDIH DI Hold Time Output Delay to ‘1’ tPD1 Output Delay to ‘0’ tPD0 tSV 0.1 Note: 4.5V ≤ VCC ≤ 5.5V 1 1M 1. This parameter is characterized and is not 100% tested. Instruction Set for the AT93C46A Address 4 Instruction SB Op Code x 16 READ 1 10 A5 - A0 Reads data stored in memory, at specified address. EWEN 1 00 11XXXX Write enable must precede all programming modes. ERASE 1 11 A5 - A0 Erase memory location An - A0. WRITE 1 01 A5 - A0 Writes memory location An - A0. ERAL 1 00 10XXXX Erases all memory locations. Valid only at VCC = 4.5V to 5.5V. WRAL 1 00 01XXXX Writes all memory locations. Valid only at VCC = 4.5V to 5.5V. EWDS 1 00 00XXXX Disables all programming instructions. AT93C46A Comments ms Write Cycle AT93C46A Functional Description The AT93C46A is accessed via a simple and versatile three-wire serial communication interface. Device operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising edge of CS and consists of a Start Bit (logic ‘1’) followed by the appropriate Op Code and the desired memory Address location. READ (READ): The Read (READ) instruction contains the Address code for the memory location to be read. After the instruction and address are decoded, data from the selected memory location is available at the serial output pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a dummy bit (logic ‘0’) precedes the 16-bit data output string. ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first before any programming instructions can be carried out. Please note that once in the Erase/Write Enable state, programming remains enabled until an Erase/Write Disable (EWDS) instruction is executed or VCC power is removed from the part. ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory location to the logical ‘1’ state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the READY/BUSY status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A logic ‘1’ at pin DO indicates that the selected memory location has been erased, and the part is ready for another instruction. WRITE (WRITE): The Write (WRITE) instruction contains the 16 bits of data to be written into the specified memory location. The self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI. The DO pin outputs the READY/BUSY status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A logic ‘0’ at DO indicates that programming is still in progress. A logic ‘1’ indicates that the memory location at the specified address has been written with the data pattern contained in the instruction and the part is ready for further instructions. A READY/BUSY status cannot be obtained if the CS is brought high after the end of the self-timed programming cycle, tWP. ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic ‘1’ state and is primarily used for testing purposes. The DO pin outputs the READY/BUSY status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%. WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the instruction. The DO pin outputs the READY/BUSY status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%. ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all programming modes and should be executed after all programming operations. The operation of the READ instruction is independent of both the EWEN and EWDS instructions and can be executed at any time. 5 Timing Diagrams Synchronous Data Timing Note: 6 1. This is the minimum SK period. AT93C46A AT93C46A Organization Key for Timing Diagrams AT93C46A I/O x 16 AN A5 DN D15 READ Timing tCS SK CS 1 1 DI 0 AN A0 DO 0 DN D0 EWEN Timing(1) tCS SK CS DI Note: 1. 1 0 0 1 1 Requires a minimum of nine clock cycles. EWDS Timing(1) tCS SK CS DI Note: 1. 1 0 0 0 0 Requires a minimum of nine clock cycles. 7 WRITE Timing CS tCS SK DI 0 1 DO AN 1 A0 DN D0 HIGH IMPEDANCE READY BUSY tWP WRAL Timing(1)(2) tCS CS SK DI DO 1 0 0 0 HIGH IMPEDANCE 1 DN D0 BUSY READY tWP Notes: 8 1. Valid only at VCC = 4.5V to 5.5V. 2. Requires a minimum of nine clock cycles. AT93C46A AT93C46A ERASE Timing CS SK DI DO TERAL Timing(1) tWP Note: 1. Valid only at VCC = 4.5V to 5.5V. 9 Ordering Information tWP (max) (ms) ICC (max) (µ µA) ISB (max) (µ µA) fMAX (kHz) 10 2000 50.0 10 2000 10 Ordering Code Package 2000 AT93C46A-10PC AT93C46A-10SC AT93C46A-10TC 8P3 8S1 8T Commercial (0°C to 70°C) 50.0 2000 AT93C46A-10PI AT93C46A-10SI AT93C46A-10TI 8P3 8S1 8T Industrial (-40°C to 85°C) 800 20.0 1000 AT93C46A-10PC-2.7 AT93C46A-10SC-2.7 AT93C46A-10TC-2.7 8P3 8S1 8T Commercial (0°C to 70°C) 10 800 20.0 1000 AT93C46A-10PI-2.7 AT93C46A-10SI-2.7 AT93C46A-10TI-2.7 8P3 8S1 8T Industrial (-40°C to 85°C) 10 600 20.0 500 AT93C46A-10PC-2.5 AT93C46A-10SC-2.5 AT93C46A-10TC-2.5 8P3 8S1 8T Commercial (0°C to 70°C) 10 600 20.0 500 AT93C46A-10PI-2.5 AT93C46A-10SI-2.5 AT93C46A-10TI-2.5 8P3 8S1 8T Industrial (-40°C to 85°C) Package Type 8P3 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-Lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8T 8-Lead, 0.170" Wide, Thin Small Outline Package (TSSOP) Options Blank Standard Device (4.5V to 5.5V) -2.7 Low Voltage (2.7V to 5.5V) -2.5 Low Voltage (2.5V to 5.5V) -1.8 Low Voltage (1.8V to 5.5V) 10 AT93C46A Operation Range AT93C46A Packaging Information 8P3, 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-001 BA 8S1, 8-Lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) Dimensions in Inches and (Millimeters) .400 (10.16) .355 (9.02) .020 (.508) .013 (.330) PIN 1 .280 (7.11) .240 (6.10) .157 (3.99) .150 (3.81) PIN 1 .244 (6.20) .228 (5.79) .037 (.940) .027 (.690) .300 (7.62) REF .050 (1.27) BSC .210 (5.33) MAX .100 (2.54) BSC SEATING PLANE .196 (4.98) .189 (4.80) .068 (1.73) .053 (1.35) .015 (.380) MIN .150 (3.81) .115 (2.92) .022 (.559) .014 (.356) .070 (1.78) .045 (1.14) .010 (.254) .004 (.102) .325 (8.26) .300 (7.62) 0 REF 8 0 REF 15 .012 (.305) .008 (.203) .430 (10.9) MAX .010 (.254) .007 (.203) .050 (1.27) .016 (.406) 8T, 8-Lead, 0.170" Wide, Thin Small Outline Package (TSSOP) Dimensions in Millimeters and (Inches)* PIN 1 6.50 (.256) 6.25 (.246) 0.30 (.012) 0.19 (.008) 3.10 (.122) 2.90 (.114) 1.05 (.041) 0.80 (.033) .65 (.026) BSC 1.20 (.047) MAX 0.15 (.006) 0.05 (.002) 4.5 (.177) 4.3 (.169) 0.20 (.008) 0.09 (.004) 0 REF 8 0.75 (.030) 0.45 (.018) 11