T OP I C S 推 广 产 品 话 题 薄型大电流功率MOSFET 「ATPAK 系列 」 (新封装) Halogen-free ATPAK采用三洋独自的Clip Bonding技术, 实现了同级别制品中最大额定电流100A (与SMP制品同等)! 同时TP享有共同安装领域, 故置换可能! ATPAK系列 最适于大电流 ・PC电源供给模组, ・数字平板电视的背光逆变器, ・电动工具等的 锂离子电池保护电路。 特长 ●TP(TO-252)级别最大* 额定电流(~100A) ●导通电阻比三洋以往制品低65%。贡献于Set 的高效率。 ●业界最薄* 1.5mm (纵9.5mm×横6.5mm×高1.5mm) ●Power Dissipation比以往品提高 10%, 比SOP封装高75%。 注*: 截至2008年4月14日, TP class中。 Clip Bonding 技术 http://semicon.cn.sanyo.com/ 三洋半导体公司 20081008－1/4 推广产品话题 薄型大电流功率MOSFET 「ATPAK20X系列」 ATPAK Series Lineup *量产时间因机种而异 ・ For DC-DC Converter for PC ( VRM etc. ) Type No. Polarity PD ATP202 ATP203 VDSS VGSS 40W 50W N ch ATP204 ±20V 30V 60W ID RDS(on) VGS=10V typ/max 50A 9/12mΩ 75A 6.3/8.2mΩ 100A 4.3/5.6mΩ ・ For LiB Protection Type No. Polarity PD VDSS VGSS ID RDS(on) VGS=10V typ/max ATP404 N ch 70W 60V ±20V 95A 5.5/7.2mΩ ・ For DC-DC Converter for PC ( VRM etc. ) Vin Type No. Polarity PD VDSS ATP108 P ch 60W -45V ATP206 ID RDS(on) VGS=10V typ/max -70A 7/9.5mΩ 40A 10.8/15mΩ 65A 7/9.1mΩ 90A 4.6/6.0mΩ -30A 56/73mΩ 45A 25/33mΩ 70A 12/16mΩ 5A 1.8/2.3Ω 5.5A 1.2/1.6Ω VGSS 40W 24V ATP207 N ch 50W ATP208 ATP301 40V ±20V 60W P ch -100V 70W 60V ATP405 100V ATP402 80W N ch ATP602 400V 70W ±30V 600V ATP605 ・ For Switching power supply Type No. Polarity ATP602 PD VDSS VGSS 70W ID RDS(on) VGS=10V typ/max 5A 1.8/2.3Ω 4A 2.5/3.2Ω 5.5A 1.2/1.6Ω 4A 1.7/2.2Ω ID RDS(on) VGS=10V typ/max 5.5A 1.4/1.8Ω 4A 1.9/2.5Ω 600V ATP603 60W ±30V N ch ATP605 70W 500V ATP606 60W ・ For Inverter for Illumination Type No. Polarity ATP608 PD VDSS VGSS 525V ±30V 70W Nch ATP609 http://semicon.cn.sanyo.com/ 60W 三洋半导体公司 20081008－2/4 推广产品话题 薄型大电流功率MOSFET 「ATPAK20X系列」 Power Dissipation 高 SANYO’s Glass epoxy substrate (copper foil area: Recommend for TP=45mm2) TP(TO-252) 1.60W SOP8 1.00W ATPAK 1.75W Approx. 75%UP Approx. 10%UP 导 通 电 阻 低 Package size (mm) ID rated RDS(on) VGS=10V(typ) RDS(on) VGS=10V(max) Conventional (TP) 6.5×9.5 30A 11mΩ 15mΩ ATPAK 6.5×9.5 100A 4.3mΩ 5.6mΩ Ratio ATPAK/TP 1.0 3.33 0.39 0.37 额定电流 / 封装图 / 焊垫(Solder Pad)图 1.5 0.5 6.5 7.3 0.4 实现了业界最薄*1.5mm 9.5 4 (纵9.5mm×横6.5mm×高1.5mm) 3 0 to 0.15 0.55 0.7 1.7 2 0.5 1 0.8 0.6 2.3 注*：截至2008年4月14日, TP class中 0.4 2.3 unit: mm ( typ ) http://semicon.cn.sanyo.com/ 三洋半导体公司 20081008－3/4 薄型大电流功率MOSFET 「ATPAK20X系列」 推广产品话题 应用例 ●DC-DC Converter 由 Low side侧 MOSFET 2个并联使用 → 1个器件 ●Backlight Inverter MOSFET x 8 (full bridge x 2) → MOSFET x 4 (full bridge x 1) Lamp x 8 / Bridge x 2 (Nch x 8) Lamp x 8 / Bridge x 1 (Nch x 4) CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL ●Multi-cell Lib Protection Circuit 与SMP相比, 安装面积约降低50%, 安装高降低60%。 P+ B+ CELL 控制 IC B- PBattery Protection http://semicon.cn.sanyo.com/ 三洋半导体公司 20081008－4/4 T OP I C S Promotional Product Topics Thin-type large-current Power MOSFET Halogen-free 「ATPAK Series 」 (New Package) By applying Sanyo’s unique Clip Bonding Tech, the new ATPAK series realized 100A rated current, which is the largest among the same class. (equivalent to SMP). The mount area is common to TP. So, it can replace TP! ATPAK Series Best suited for large-current application such as: ・PC power supply module ・Flat digital TV’s backlight inverter ・Electrical tools Li-ion battery protection circuit Features ●Current: the industry’s largest*~100A among TP(TO-252) class. ●ON-resistance: 65% lower than that of Sanyo’s earlier products. ● Height: the industry’s thinnest *1.5mm (L 9.5mm x W 6.5mm x H1.5mm) ● PD: 10% higher than that of earlier products. 75% higher than that of SOP products. *: as of April 14, 2008 among TP class products. Clip Bonding Tech. www.semiconductor-sanyo.com/network/ 20081008－1/4 Promotional Product Topics Thin-type Large-current Power MOSFET 「ATPAK20X Series」 ATPAK Series Lineup Note: The mass production time varies according to each model. ・ For DC-DC Converter for PC ( VRM etc. ) Type No. Polarity PD ATP202 ATP203 VDSS VGSS 40W 50W N ch ATP204 ±20V 30V 60W ID RDS(on) VGS=10V typ/max 50A 9/12mΩ 75A 6.3/8.2mΩ 100A 4.3/5.6mΩ ・ For LiB Protection Type No. Polarity PD VDSS VGSS ID RDS(on) VGS=10V typ/max ATP404 N ch 70W 60V ±20V 95A 5.5/7.2mΩ ・ For DC-DC Converter for PC ( VRM etc. ) Vin Type No. Polarity PD VDSS ATP108 P ch 60W -45V ATP206 ID RDS(on) VGS=10V typ/max -70A 7/9.5mΩ 40A 10.8/15mΩ 65A 7/9.1mΩ 90A 4.6/6.0mΩ -30A 56/73mΩ 45A 25/33mΩ 70A 12/16mΩ 5A 1.8/2.3Ω 5.5A 1.2/1.6Ω VGSS 40W 24V ATP207 N ch 50W ATP208 ATP301 40V ±20V 60W P ch -100V 70W 60V ATP405 100V ATP402 80W N ch ATP602 400V 70W ±30V 600V ATP605 ・ For Switching power supply Type No. Polarity ATP602 PD VDSS VGSS 70W ID RDS(on) VGS=10V typ/max 5A 1.8/2.3Ω 4A 2.5/3.2Ω 5.5A 1.2/1.6Ω 4A 1.7/2.2Ω ID RDS(on) VGS=10V typ/max 5.5A 1.4/1.8Ω 4A 1.9/2.5Ω 600V ATP603 60W ±30V N ch ATP605 70W 500V ATP606 60W ・ For Inverter for Illumination Type No. Polarity ATP608 PD VDSS VGSS 525V ±30V 70W N ch ATP609 www.semiconductor-sanyo.com/network/ 60W 20081008－2/4 Promotional Product Topics Thin-type Large-current Power MOSFET「ATPAK20X Series」 High Power Dissipation SANYO’s Glass epoxy substrate (copper foil area: Recommend for TP=45mm2) TP(TO-252) 1.60W SOP8 1.00W ATPAK 1.75W Approx. 75%UP Approx. 10%UP Low ON Resistance Package size (mm) ID rated RDS(on) VGS=10V(typ) RDS(on) VGS=10V(max) Conventional (TP) 6.5×9.5 30A 11mΩ 15mΩ ATPAK 6.5×9.5 100A 4.3mΩ 5.6mΩ Ratio ATPAK/TP 1.0 3.33 0.39 0.37 Rated Current / Package / Solder Pad 1.5 0.5 6.5 7.3 3 Realized the industry’s thinnest *1.5mm! 0 to 0.15 0.55 0.8 0.6 2.3 (L9.5mm x W 6.5mm X H 1.5mm) 0.7 1.7 2 0.5 1 0.4 9.5 4 0.4 *: as of April 14, 2008 among TP-class products 2.3 unit: mm ( typ ) www.semiconductor-sanyo.com/network/ 20081008－3/4 Promotional Product Topics Thin-type Large-current Power MOSFET「ATPAK20X Series」 Application Examples ●DC-DC Converter Low side: MOSFET x 2 (in parallel) → 1 device ●Backlight Inverter MOSFET x 8 (full-bridge x 2) → MOSFET x 4 (full-bridge x 1) 8 lamps / 1 Bridge (Nch: 4) 8 lamps / 2 Bridges (Nch: 8) CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL CCFL ●Multi-cell Li-ion battery protection circuit Compared with SMP, mount area is reduced by approx. 50%, an height is reduced by 60%. P+ B+ CELL Control IC B- PBattery Protection www.semiconductor-sanyo.com/network/ 20081008－4/4