IRF AUIRFU4292

PD - 97792
AUTOMOTIVE GRADE
AUIRFR4292
AUIRFU4292
Features
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●
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Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
V (BR)DSS
RDS(on) typ.
max.
ID
D
G
S
Description
250V
275m
345m
9.3A
D
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety of other applications.
S
D
G
S
G
I-Pak
AUIRFU4292
D-Pak
AUIRFR4292
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
9.3
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
6.6
100
0.67
± 20
W
W/°C
V
EAS
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
130
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
IDM
PD @TC = 25°C
VGS
c
c
A
40
h
d
97
See Fig.12a, 12b, 15, 16
g
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
A
mJ
-55 to + 175
°C
300
Thermal Resistance
j
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient (PCB Mount)
RJA
Junction-to-Ambient
i
Typ.
Max.
Units
–––
1.5
°C/W
–––
50
–––
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/18/12
AUIRFR/U4292
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
 V(BR)DSS /T J
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
250
–––
–––
3.0
6.2
–––
–––
–––
–––
–––
0.31
275
–––
–––
–––
–––
–––
–––
–––
–––
345
5.0
–––
20
250
100
-100
V
V/°C
m
V
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 5.6A
VDS = VGS, ID = 50μA
VDS = 50V, ID = 5.6A
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, T J = 125°C
VGS = 20V
VGS = -20V
e
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
13
4.7
4.8
11
15
16
8.4
4.5
Max. Units
20
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
705
71
20
600
26
65
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 200V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 200V
nC
ns
nH
pF
Conditions
ID = 5.6A
VDS = 125V
VGS = 10V
VDD = 250V
ID = 5.6A
RG = 15
VGS = 10V
Between lead,
e
e
D
G
f
Diode Characteristics
Min.
Typ.
IS
Continuous Source Current
Parameter
–––
–––
9.3
ISM
(Body Diode)
Pulsed Source Current
–––
–––
40
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
110
390
1.3
165
585
c
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 8.1mH
RG = 50, IAS = 5.6A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width  1.0ms; duty cycle  2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value is determined from sample failure
population, starting TJ = 25°C, L = 8.1mH,
RG = 50, IAS = 5.6A, VGS =10V.
2
Max. Units
Conditions
D
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 5.6A, VGS = 0V
TJ = 25°C, IF = 5.6A, VDD = 125V
di/dt = 100A/μs
e
e
Intrins ic turn-on time is negligible (turn-on is dominatedby LS+LD)
‡ When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
ˆ R is measured at TJ approximately 90°C.
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AUIRFR/U4292
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
D-PAK
MSL1
I-PAK
N/A
Class M1B (+/- 100V)††
AEC-Q101-002
ESD
Human Body Model
Class H1A (+/- 500V)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)††
AEC-Q101-005
RoHS Compliant
†
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
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3
AUIRFR/U4292
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
1
0.1
5.5V
60μs PULSE WIDTH
10
BOTTOM
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
5.5V
1
60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
16
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 175°C
10
TJ = 25°C
VDS = 50V
60μs PULSE WIDTH
1.0
14
T J = 25°C
12
10
8
6
T J = 175°C
4
V DS = 10V
2
380μs PULSE WIDTH
0
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
0
1
2
3
4
5
6
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRFR/U4292
100000
ID= 5.6A
VGS, Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1000
Ciss
Coss
100
Crss
10
12.0
VDS= 200V
VDS= 125V
10.0
VDS= 50V
8.0
6.0
4.0
2.0
0.0
1
1
10
100
0
1000
VDS, Drain-to-Source Voltage (V)
4
6
8
10
12
14
16
18
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
2
T J = 175°C
10
T J = 25°C
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
100μsec
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR/U4292
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
10
ID, Drain Current (A)
8
6
4
2
3.0
ID = 9.3A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR/U4292
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
VGS
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
600
15V
ID
1.0A
2.2A
BOTTOM 5.6A
TOP
500
400
300
200
100
0
tp
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V
.2F
.3F
D.U.T.
+
V
- DS
VGS(th) , Gate threshold Voltage (V)
5.5
5.0
4.5
4.0
3.5
3.0
ID = 50μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.5
2.0
VGS
-75 -50 -25
3mA
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR/U4292
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
10
0.01
0.05
1
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
140
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 5.6A
EAR , Avalanche Energy (mJ)
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFR/U4292
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
P.W.
Period
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple  5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width µs
Duty Factor 
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRFR/U4292
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR4292
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U4292
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUFU4292
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRFR/U4292
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
12
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AUIRFR/U4292
Ordering Information
Base part
number
Package Type
AUIRFR4292
DPak
AUIRFU4292
IPak
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Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
75
2000
3000
3000
75
AUIRFR4292
AUIRFR4292TR
AUIRFR4292TRL
AUIRFR4292TRR
AUIRFU4292
13
AUIRFR/U4292
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
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in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
14
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