PD - 97612A
AUTOMOTIVE GRADE
AUIRFZ48Z
AUIRFZ48ZS
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up
to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
V(BR)DSS
D
55V
RDS(on) max.
G
11mΩ
ID
S
61A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D
D
G
D
S
G
S
D2Pak
AUIRFZ48ZS
TO-220AB
AUIRFZ48Z
G
Gate
D
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Parameter
61
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
43
IDM
Pulsed Drain Current
240
PD @TC = 25°C
Maximum Power Dissipation
c
Linear Derating Factor
VGS
EAS
Gate-to-Source Voltage
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Single Pulse Avalanche Energy (Thermally Limited)
c
i
d
h
Peak Diode Recovery dv/dt e
W
0.61
± 20
W/°C
V
73
mJ
120
See Fig.12a,12b,15,16
A
mJ
7.2
-55 to + 175
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
V/ns
°C
300
10 lbf•in (1.1N•m)
Thermal Resistance
k
91
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
Typ.
Max.
Units
–––
1.64
°C/W
0.50
–––
–––
62
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/21/11
AUIRFZ48Z/ZS
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient –––
55
Conditions
–––
–––
V
0.054
–––
V/°C
Reference to 25°C, ID = 1mA
VGS = 0V, ID = 250μA
VGS = 10V, ID = 37A
f
RDS(on)
Static Drain-to-Source On-Resistance –––
8.6
11
mΩ
VGS(th)
Gate Threshold Voltage
–––
4.0
V
gfs
Forward Transconductance
24
–––
–––
S
VDS = 25V, ID = 37A
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
VDS = 55V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
2.0
VDS = VGS, ID = 250μA
VDS = 55V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
Qg
Total Gate Charge
Parameter
–––
43
64
nC
Conditions
Qgs
Gate-to-Source Charge
–––
11
16
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
24
td(on)
Turn-On Delay Time
–––
15
–––
tr
Rise Time
–––
69
–––
ID = 37A
td(off)
Turn-Off Delay Time
–––
35
–––
RG = 12Ω
tf
Fall Time
–––
39
–––
LD
Internal Drain Inductance
–––
4.5
–––
ID = 37A
VDS = 44V
VGS = 10V
ns
VGS = 10V
nH
f
VDD = 28V
f
Between lead,
D
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
–––
1720
–––
Coss
Output Capacitance
–––
300
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
160
–––
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
1020
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
230
–––
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
380
–––
VGS = 0V, VDS = 0V to 44V
pF
G
and center of die contact
VGS = 0V
S
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ISM
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L =0.11mH,
RG = 25Ω, IAS = 37A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 37A, di/dt ≤ 920A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
–––
–––
61
–––
–––
240
Conditions
MOSFET symbol
A
D
–––
–––
1.3
V
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 37A, VGS = 0V
–––
–––
20
13
31
20
ns
nC
di/dt = 100A/μs
S
f
TJ = 25°C, IF = 37A, VDD = 30V
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L =0.11mH, R G = 25Ω, IAS = 37A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is rated at TJ of approximately 90°C.
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AUIRFZ48Z/ZS
Qualification Information†
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
††
TO-220AB
N/A
2
MSL1
D Pak
Class M4 (+/- 425V)
AEC-Q101-002
†††
Class H1B (+/- 1000V)
AEC-Q101-001
Class C5 (+/- 1125V)
AEC-Q101-005
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFZ48Z/ZS
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
30μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
BOTTOM
4.5V
10
30μs PULSE WIDTH
Tj = 175°C
1
0.1
1000
Fig 1. Typical Output Characteristics
10
100
1000
Fig 2. Typical Output Characteristics
1000
60
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 175°C
100
T J = 25°C
10
VDS = 25V
30μs PULSE WIDTH
1.0
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 25°C
50
40
30
TJ = 175°C
20
10
V DS = 10V
0
10
0
10
20
30
40
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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ance
AUIRFZ48Z/ZS
10000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 37A
C, Capacitance(pF)
C oss = C ds + C gd
Ciss
1000
Coss
Crss
VDS= 44V
VDS= 28V
10.0
VDS= 11V
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
20
30
40
50
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
10
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
T J = 175°C
TJ = 25°C
10
VGS = 0V
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100μsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFZ48Z/ZS
70
2.5
50
ID, Drain Current (A)
ID = 37A
VGS = 10V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
60
40
30
20
10
2.0
1.5
1.0
0
0.5
25
50
75
100
125
150
175
-60 -40 -20 0
T C , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
τ
Ri (°C/W) τi (sec)
0.9848 0.000451
0.6546
0.002487
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFZ48Z/ZS
15V
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
DRIVER
L
VDS
300
ID
TOP
3.5A
4.9A
BOTTOM 37A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.0
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
VCC
1K
VGS(th) Gate threshold Voltage (V)
VG
3.5
3.0
2.5
ID = 250μA
2.0
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFZ48Z/ZS
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
80
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 37A
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
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AUIRFZ48Z/ZS
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRFZ48Z/ZS
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFZ48Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFZ48Z/ZS
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFZ48ZS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRFZ48Z/ZS
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
12
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
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AUIRFZ48Z/ZS
Ordering Information
Base part
AUIRFZ48Z
AUIRFZ48ZS
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Package Type
TO-220
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFZ48Z
AUIRFZ48ZS
AUIRFZ48ZSTRL
AUIRFZ48ZSTRR
13
AUIRFZ48Z/ZS
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
14
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