PD - 96383A
AUTOMOTIVE GRADE
AUIRF2805S
AUIRF2805L
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V(BR)DSS
G
S
55V
RDS(on) max.
4.7mΩ
ID
135A
h
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
D2Pak
AUIRF2805S
TO-262
AUIRF2805L
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested)
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested value
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Max.
c
d
c
i
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
h
h
135
96
700
200
1.3
±20
380
920
j
A
W
W/°C
V
mJ
See Fig.12a,12b, 15,16
A
mJ
2.0
V/ns
-55 to + 175
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mounted)
k
Typ.
Max.
Units
–––
–––
0.75
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/29/11
AUIRF2805S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
55
–––
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.06
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.9
4.7
2.0
–––
4.0
mΩ
V
VDS = VGS, ID = 250μA
gfs
IDSS
Forward Transconductance
91
–––
–––
S
VDS = 25V, ID = 104A
Drain-to-Source Leakage Current
–––
–––
20
μA
VDS = 55V, VGS = 0V
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
200
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
IGSS
Conditions
VGS = 0V, ID = 250μA
VGS = 10V, ID = 104A
f
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
–––
38
57
Qgd
Gate-to-Drain ("Miller") Charge
–––
52
78
VGS = 10V
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 28V
tr
Rise Time
–––
120
–––
td(off)
Turn-Off Delay Time
–––
68
–––
tf
Fall Time
–––
110
–––
LD
Internal Drain Inductance
LS
–––
Internal Source Inductance
150
ID = 104A
230
–––
4.5
–––
–––
7.5
–––
nC
VDS = 44V
f
ID = 104A
ns
RG = 2.5Ω
f
VGS = 10V
Between lead,
nH
D
6mm (0.25in.)
Between lead,
G
Ciss
Input Capacitance
–––
5110
–––
and center of die contact
VGS = 0V
Coss
Output Capacitance
–––
1190
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
210
–––
Coss
Output Capacitance
–––
6470
–––
Coss
Output Capacitance
Effective Output Capacitance
Coss eff.
pF
S
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 1.0V, ƒ =1.0MHz
–––
860
–––
VGS = 0V, VDS = 44V, ƒ =1.0MHz
–––
1600
–––
VGS = 0V, VDS = 0V to 44V
Min.
Typ.
Max.
g
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
h
Units
–––
–––
–––
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
80
120
ns
Qrr
Reverse Recovery Charge
–––
290
430
nC
ton
Forward Turn-On Time
c
175
Conditions
MOSFET symbol
A
700
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 104A, VGS = 0V
f
S
TJ = 25°C, IF = 104A
di/dt = 100A/μs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction
temperature. (See fig. 11).
Starting T J = 25°C, L = 0.08mH, RG = 25Ω, IAS = 104A.
(See Figure 12).
ISD ≤ 104A, di/dt ≤ 240A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS .
2
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population
Starting T J = 25°C, L = 0.08mH, RG = 25Ω, IAS = 104A.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
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AUIRF2805S/L
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
3L-D2 PAK
MSL1
3L-TO-262
N/A
†††
Machine Model
Class M4(+/- 800V )
(per AEC-Q101-002)
†††
Human Body Model
ESD
Class H3A(+/- 5000V )
(per AEC-Q101-001)
†††
Charged Device Model
RoHS Compliant
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRF2805S/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4.5V
10
100
20μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
4.5V
20μs PULSE WIDTH
Tj = 175°C
10
0.1
100
1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
T J = 25°C
I D = 175A
2.5
100
VDS = 25V
20μs PULSE WIDTH
10
4.0
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10.0
2.0
(Normalized)
T J = 175°C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
4
10
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF2805S/L
10000
Crss
Coss
ID= 104A
VGS , Gate-to-Source Voltage (V)
8000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
= Cgd
= Cds + Cgd
6000
Ciss
4000
2000
Coss
1
12
8
4
0
Crss
0
16
10
0
100
10000
ID, Drain-to-Source Current (A)
1000.0
T J = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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80
120
160
200
240
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
40
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100.0
VDS= 44V
VDS= 28V
1000
100
100μsec
1msec
10
1
1.8
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2805S/L
140
LIMITED BY PACKAGE
ID , Drain Current (A)
RD
V DS
120
VGS
100
D.U.T.
RG
+
-V DD
80
10V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
20
0
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2805S/L
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
800
ID
42.5A
73.5A
BOTTOM 104A
TOP
600
400
200
V(BR)DSS
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
ID = 250μA
3.0
2.0
1.0
50KΩ
12V
-VGS(th) Gate threshold Voltage (V)
10 V
4.0
-75
.2μF
.3μF
D.U.T.
+
V
- DS
VGS
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2805S/L
10000
Avalanche Current (A)
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
10
0.10
1
0.1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 104A
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF2805S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
VGS
*
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
V DD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V[ GS=10V]
***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
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9
AUIRF2805S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUF2805S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF2805S/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUF2805L
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF2805S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
12
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
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AUIRF2805S/L
Ordering Information
Base part
AUIRF2805L
AUIRF2805S
www.irf.com
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRF2805L
AUIRF2805S
AUIRF2805STRL
AUIRF2805STRR
13
AUIRF2805S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
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are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
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designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
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14
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