PD - 97682
AUTOMOTIVE GRADE
AUIRLZ44Z
Features
●
●
●
●
●
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HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
V(BR)DSS
55V
RDS(on) typ.
11mΩ
max. 13.5mΩ
ID
51A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
D
G
D
S
TO-220AB
AUIRLZ44Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS(Thermally Limited)
EAS (tested )
IAR
EAR
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
c
h
g
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
W
0.53
± 16
78
110
See Fig.12a, 12b, 15, 16
300
10 lbf in (1.1N m)
y
y
1.87
Case-to-Sink, Flat Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
RθCS
A
mJ
°C
Max.
i
W/°C
V
mJ
-55 to + 175
–––
Junction-to-Case
RθJA
A
Typ.
RθJC
Parameter
Units
51
36
204
80
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/10/11
AUIRLZ44Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
–––
–––
1.0
27
–––
–––
–––
–––
–––
0.05
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13.5
20
22.5
3.0
–––
20
250
200
-200
V
V/°C
mΩ
mΩ
mΩ
V
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 31A
VGS = 5.0V, ID = 30A
VGS = 4.5V, ID = 15A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 31A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
e
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
24
7.5
12
14
160
25
42
4.5
Conditions
Max. Units
ID = 31A
36
–––
nC VDS = 44V
VGS = 5.0V
–––
–––
VDD = 50V
ID = 31A
–––
–––
ns RG = 7.5 Ω
–––
VGS = 5.0V
–––
Between lead,
e
e
nH
D
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1620
230
130
860
180
280
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
pF
G
f
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
51
ISM
(Body Diode)
Pulsed Source Current
–––
–––
204
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
21
16
1.3
32
24
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.166mH
RG = 25Ω, IAS = 31A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
2
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VDD = 28V
di/dt = 100A/μs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.166mH, RG = 25Ω, IAS = 31A, VGS =10V.
Rθ is measured at TJ approximately 90°C.
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AUIRLZ44Z
Qualification Information†
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
††
TO-220AB
N/A
†††
Class M4(+/- 425V )
(per AEC-Q101-002)
†††
Class H1C(+/- 2000V )
(per AEC-Q101-001)
†††
Class C5(+/- 1125V )
(per AEC-Q101-005)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRLZ44Z
1000
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
10
3.0V
1
≤ 60μs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
TOP
100
BOTTOM
10
3.0V
≤ 60μs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000.0
60
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 25°C
100.0
T J = 175°C
10.0
VDS = 20V
≤ 60μs PULSE WIDTH
T J = 175°C
40
T J = 25°C
20
VDS = 10V
380μs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10.0
0
0
10
20
30
40
50
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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ance
AUIRLZ44Z
2500
VGS, Gate-to-Source Voltage (V)
C rss = C gd
2000
C, Capacitance (pF)
12
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C oss = C ds + C gd
Ciss
1500
1000
500
Coss
Crss
VDS= 44V
VDS= 28V
VDS= 11V
10
8
6
4
2
0
0
1
ID= 31A
10
0
100
20
30
40
50
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000.0
ISD, Reverse Drain Current (A)
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100.0
T J = 175°C
10.0
T J = 25°C
1.0
VGS = 0V
0.6
1.0
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
0.1
0.2
100μsec
10
1.8
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRLZ44Z
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
60
ID , Drain Current (A)
50
40
30
20
10
0
ID = 30A
VGS = 5.0V
2.0
1.5
1.0
0.5
25
50
75
100
125
150
175
-60 -40 -20
T J , Junction Temperature (°C)
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
τJ
0.05
0.02
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
0.01
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.736
0.000345
0.687
0.449
0.00147
0.007058
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLZ44Z
15V
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS, Single Pulse Avalanche Energy (mJ)
DRIVER
L
VDS
320
ID
3.7A
5.7A
BOTTOM 31A
TOP
240
160
80
0
tp
25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
3.0
Charge
Fig 13a. Basic Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
VG
2.5
ID = 250μA
2.0
1.5
1.0
L
DUT
0
1K
VCC
0.5
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRLZ44Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Δ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 31A
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRLZ44Z
D.U.T
Driver Gate Drive
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
InductorCurent
Current
Inductor
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
VGS
RD
D.U.T.
RG
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRLZ44Z
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRLZ44Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLZ44Z
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRLZ44Z
TO-220
Form
Tube
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Complete Part Number
Quantity
50
AUIRLZ44Z
11
AUIRLZ44Z
IMPORTANT NOTICE
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subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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