ONSEMI BAT54XV2T1

BAT54XV2T1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
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Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
• Pb−Free Package is Available
30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Reverse Voltage
Symbol
Value
Unit
VR
30
V
Symbol
Max
Unit
PD
200
mW
1.57
mW/°C
RJA
635
°C/W
TJ, Tstg
−55 to 125
°C
1
CATHODE
2
ANODE
THERMAL CHARACTERISTICS
2
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1
SOD−523
CASE 502
PLASTIC
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad.
1
JVM G
G
JV
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
BAT54XV2T1
SOD−523
3000 / Tape & Reel
BAT54XV2T1G
SOD−523
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 3
1
Publication Order Number:
BAT54XV2T1/D
BAT54XV2T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.5
2.0
Adc
Forward Voltage
(IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−
0.52
0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
−
−
5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
Forward Current (DC)
IF
−
−
200
mAdc
Repetitive Peak Forward Current
IFRM
−
−
300
mAdc
Non−Repetitive Peak Forward Current
(t < 1.0 s)
IFSM
−
−
600
mAdc
trr
t
Reverse Breakdown Voltage
(IR = 10 A)
820 +10 V
2k
100 H
0.1 F
IF
t
tp
r
0.1 F
t
IF
10%
DUT
50 Output
Pulse
Generator
50 Input
Sampling
Oscilloscope
90%
iR(REC) = 1 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54XV2T1
IF, FORWARD CURRENT (mA)
100
10
1 50°C
1 25°C
1.0
85°C
25°C
0.1
0.0
0.2
0.1
−40°C
0.3
−55°C
0.4
0.5
0.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1000
IR, REVERSE CURRENT (A)
TA = 150°C
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
0.001
TA = 25°C
0
5
10
15
25
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
CT, TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54XV2T1
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
−X−
A
−Y−
B
1
2
DIM
A
B
C
D
J
K
S
D 2 PL
0.08 (0.003)
M
T X Y
MILLIMETERS
MIN
NOM
MAX
1.10
1.20
1.30
0.70
0.80
0.90
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
0.15
0.20
0.25
1.50
1.60
1.70
MIN
0.043
0.028
0.020
0.010
0.0028
0.006
0.059
INCHES
NOM
MAX
0.047
0.051
0.032
0.035
0.024
0.028
0.012
0.014
0.0055 0.0079
0.008
0.010
0.063
0.067
C
−T−
K
J
SEATING
PLANE
S
SOLDERING FOOTPRINT*
1.40
0.0547
0.40
0.0157
0.40
0.0157
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Email: [email protected]
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For additional information, please contact your
local Sales Representative.
BAT54XV2T1/D