BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT- 23 small outline plastic package A 2.80 3.00 0.110 0.118 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.20 1.40 0.047 0.055 C 0.30 0.50 0.012 0.020 High temperature soldering guaranteed: 260°C/10s D 1.80 2.00 0.071 0.079 Weight : 0.008gram (approximately) E 2.25 2.55 0.089 0.100 F 0.90 1.20 0.035 0.043 Ordering Information Package Part No. Suggested PAD Layout Packing Marking SOT-23 BC846A RF 3K / 7" Reel 1A SOT-23 BC846B RF 3K / 7" Reel 1B SOT-23 BC847A RF 3K / 7" Reel 1E SOT-23 BC847B RF 3K / 7" Reel 1F 2.0 SOT-23 BC847C RF 3K / 7" Reel 1G 0.079 SOT-23 BC848A RF 3K / 7" Reel 1J SOT-23 BC848B RF 3K / 7" Reel 1K SOT-23 BC848C RF 3K / 7" Reel 1L SOT-23 BC846A RFG 3K / 7" Reel 1A SOT-23 BC846B RFG 3K / 7" Reel 1B SOT-23 BC847A RFG 3K / 7" Reel 1E SOT-23 BC847B RFG 3K / 7" Reel 1F SOT-23 BC847C RFG 3K / 7" Reel 1G SOT-23 BC848A RFG 3K / 7" Reel 1J SOT-23 BC848B RFG 3K / 7" Reel 1K SOT-23 BC848C RFG 3K / 7" Reel 1L 0.95 0.037 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Range BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 Symbol Value Units PD mW IC 250 80 50 30 65 45 30 6 6 5 0.1 TJ, TSTG -55 to + 150 °C VCBO VCEO VEBO V V V A Notes:1. Valid provided that electrodes are kept at ambient temperature Version : E11 BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor Electrical Characteristics Collector Cut-off Current VCB= 30V IE= 0 ICBO Min 80 50 30 65 45 30 6 6 5 - 15 nA Emitter Cut-off Current VEB= 5V IC=0 IEBO - 0.1 μA VCE= 5V IC= 2mA hFE 110 200 420 220 450 800 IC= 100mA IB= 5mA VCE(sat) - 0.5 IC= 100mA IB= 5mA VBE(sat) - 1.1 V fT 100 - MHz Type Number Symbol Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage VCE= 5V Transition frequency IC= 10μA IE= 0 V(BR)CBO IC= 10mA IB= 0 V(BR)CEO IE= 1μA IC= 0 V(BR)EBO IC= 10mA f= 100MHz Max Units - V - V - V V Tape & Reel specification Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d P1 T Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 E A C Symbol A B C d D D1 D2 E F P0 P1 T W W1 F W B W1 D D2 D1 Direction of Feed Version : E11 BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Figure 2. DC Current Gain Figure1. Static Characteristic IC[mA], COLLECTOR CURRENT 100 MGT723 400 handbook, halfpage IB = 400µA IB = 350µA 80 hFE IB = 300µA (1) 300 IB = 250µA 60 IB = 200µA (2) 200 IB = 150µA 40 IB = 100µA (3) 20 100 IB = 50µA 0 0 4 8 12 16 20 0 10−1 VCE[V], COLLECTOR-EMITTER VOLTAGE 1 10 102 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 MGT724 1200 BE (mV) 1000 103 I C (mA) IC[mA], COLLECTOR CURRENT handbook, halfpage V (1) 800 (2) 600 (3) 400 VCE = 2V 10 1 200 0.1 0.0 0 10−1 1 102 10 103 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE I C (mA) Figure 5. Collector Output Capacitance 100 Cob[pF], CAPACITANCE f=1MHz 10 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE 1000 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Figure 6. Current Gain Bandwidth Product 1000 VCE =5V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Version : E11