BUZ 100SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.012 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 70 A • Logic Level • dv/dt rated • 175˚C operating temperature Type Package Ordering Code Packaging BUZ100SL P-TO220-3-1 Q67040-S4000-A2 Tube BUZ100SL E3045A P-TO263-3-2 Q67040-S4000-A6 Tape and Reel BUZ100SL E3045 P-TO263-3-2 Q67040-S4000-A5 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 ˚C 70 TC = 100 ˚C 50 Pulsed drain current Unit IDpulse 280 EAS 380 EAR 17 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 170 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 70 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 70 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 05.99 BUZ 100SL Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.88 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area1) - - 40 K/W Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage, VGS = VDS ID = 130 µA Zero gate voltage drain current µA I DSS VDS = 50 V, VGS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 ˚C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, ID = 50 A - 0.016 0.018 VGS = 10 V, ID = 50 A - 0.01 0.012 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BUZ 100SL Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. g fs 25 58 - S Ciss - 2130 2660 pF Coss - 600 750 Crss - 320 400 t d(on) - 15 25 tr - 70 105 t d(off) - 40 60 tf - 25 40 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 50 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 4.5 V, ID = 70 A, RG = 2.2 Ω Rise time VDD = 30 V, V GS = 4.5 V, ID = 70 A, RG = 2.2 Ω Turn-off delay time VDD = 30 V, V GS = 4.5 V, ID = 70 A, RG = 2.2 Ω Fall time VDD = 30 V, V GS = 4.5 V, ID = 70 A, RG = 2.2 Ω Data Sheet 3 05.99 BUZ 100SL Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Q gs - 10 15 Q gd - 35 52.5 Qg - 85 130 V(plateau) - 4.1 - V IS - - 70 A I SM - - 280 VSD - 1.25 1.8 V t rr - 110 165 ns Q rr - 0.23 0.35 µC Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 70 A Gate to drain charge VDD = 40 V, ID = 70 A Gate charge total VDD = 40 V, ID = 70 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 70 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 140 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 100SL Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V BUZ100SL BUZ100SL 75 A 180 W 60 140 50 120 ID Ptot 55 100 45 40 35 80 30 25 60 20 40 15 10 20 5 0 0 20 40 60 80 0 0 100 120 140 160 ˚C 190 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 3 BUZ100SL 10 1 BUZ100SL K/W tp = 34.0µs 10 0 100 µs 10 -1 = V DS ID /I D 10 2 Z thJC A (o n) 10 -2 R DS D = 0.50 10 1 ms 0.20 1 10 -3 0.10 10 ms 0.05 0.02 DC 10 0 -1 10 10 0 10 1 V 10 2 VDS Data Sheet 10 -4 single pulse 10 -5 -7 10 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 100SL Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ100SL 170 BUZ100SL Ptot = 170W 0.060 A Ω g VGS [V] a 2.5 140 f b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 ID 120 100 e 80 d i 6.5 j 7.0 60 c 40 k 8.0 l 10.0 b c d e f 0.050 0.045 RDS(on) l k ji h 0.040 0.035 0.030 0.025 0.020 g h i j k l 0.015 20 0.010 b VGS [V] = 0.005 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 VDS b 3.0 c 3.5 20 d 4.0 e f 4.5 5.0 40 g 5.5 60 80 h i 6.0 6.5 j 7.0 k l 8.0 10.0 120 A 100 150 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on)max gfs = f(ID ); Tj = 25˚C parameter: gfs 70 60 S A 50 45 50 gfs ID 40 40 35 30 30 25 20 20 15 10 10 5 0 1.0 1.5 2.0 2.5 3.0 V 0 0 4.0 VGS Data Sheet 10 20 30 40 50 A 65 ID 6 05.99 BUZ 100SL Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 130 µA parameter : ID = 50 A, VGS = 4.5 V BUZ100SL 3.0 V 0.065 Ω 0.055 2.4 VGS(th) RDS(on) 0.050 0.045 0.040 2.2 2.0 1.8 1.6 0.035 1.4 0.030 1.2 98% typ 0.025 1.0 0.020 0.8 0.015 0.6 0.010 0.4 typ 0.2 0.005 0.000 -60 max min 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 200 ˚C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) Parameter: VGS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 BUZ100SL A pF Ciss C IF 10 2 10 3 Coss 10 1 Tj = 25 ˚C typ Crss Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 2 0 5 10 15 20 25 30 V 10 0 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 100SL Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 70 A, V DD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 70 A BUZ100SL 400 16 mJ V 320 12 VGS EAS 280 240 200 10 8 160 0,2 VDS max 0,8 VDS max 6 120 4 80 2 40 0 20 40 60 80 100 120 140 ˚C 0 0 180 Tj 20 40 60 80 100 nC 140 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ100SL 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 05.99