SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES BCW31 D1 BCW32 D2 BCW33 D3 BCW31 BCW32 BCW33 BCW31R D4 BCW32R D5 BCW33R D6 E C BCW31 - BCW29 BCW32 - BCW30 BCW33 - N/A B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Base - Emitter Voltage VBE 550 Collector-Emitter Saturation Voltage VCE(SAT) 120 210 Base-Emitter Saturation Voltage VBE(SAT) 750 850 Collector- Base Cut-Off Current ICBO Static Forward Current Transfer Ratio BCW31 hFE BCW32 hFE BCW33 hFE Transition Frequency fT Collector Capacitance CTC Noise Figure N TYP. MAX. UNIT CONDITIONS. 700 mV IC=2mA, VCE = 5V 250 mV mV IC=10mA, IB = 0.5mA IC=50mA, IB =2.5mA mV mV IC=10mA, IB=0.5mA IC =50mA, IB=2.5mA nA IE=0, VCB=20V IE=0,VCB=20V,Tj=100°C 100 10 110 200 420 90 150 270 µA 220 IC=10µA, VCE=5V IC=2mA, VCE=5V 450 IC=10µA, VCE=5V IC=2mA, VCE=5V 800 IC=10µA, VCE=5V IC=2mA, VCE=5V 300 MHz IC=10mA, VCE=5V f = 35MHz 4 pF IE =Ie =0, VCB =10V f= 1MHz 10 dB IC= 200mA, VCE =5V RS =2KΩ, f=1KHz B= 200Hz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device PAGE NO