FMMTA05 FMMTA06 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 FEATURES * 80 Volt VCEO * Gain of 50 at IC=100mA PARTMARKING DETAIL E C FMMTA05 1H FMMTA06 1G FMMTA05R NA FMMTA06R MA B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA05 FMMTA06 UNIT Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 4 V 500 mA 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL FMMTA05 FMMTA06 MIN. MIN. MAX. UNIT CONDITIONS. MAX. Collector-Emitter Breakdown Voltage V(BR)EBO 60 80 V IC=1mA* Emitter-Base Breakdown Voltage V(BR)EBO 4 4 V IE=100µA Collector Cut-Off Current ICES 0.1 0.1 µA VCES=60V Collector Cut-Off Current ICBO 0.1 0.1 µA µA VCB=60V VCB=80V Static Forward hFE Current Transfer Ratio 50 50 50 50 IC=10mA, VCE=1V* IC=100mA, VCE=1V* Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.25 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.2 1.2 V IC=100mA, VCE=1V* Transition Frequency fT MHz IC=10mA, VCE=2V f=100MHz 100 100 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 173