BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 Pin Configuration .016 (0.4) 0.035 (0.9) 0.079 (2.0) .045 (1.15) .037 (0.95) 1 0.031 (0.8) 0.037 (0.95) 0.037 (0.95) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: EG Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box • NPN Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary type, BCW68G PNP transistor is recommended. Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 75 V Emitter-Base Voltage VEBO 5.0 V Collector Current (DC) IC 800 mA Peak Collector Current ICM 1.0 A Base Current (DC) IB 100 mA Peak Base Current IBM 200 mA Power Dissipation, TS = 79°C Ptot 330 mW Tj 150 °C TSTG –65 to +150 °C Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Air RθJA Thermal Resistance, Junction to Soldering Point RθJS ≤ 285 (1) ≤ 215 °C/W °C/W Note: (1) Mounted on FR-4 printed-ciruit board. Document Number 88172 09-May-02 www.vishay.com 1 BCW66G Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Min. TYP. Max. Unit hFE hFE hFE hFE 50 110 160 60 – – 250 – – – 400 – – – – – Collector-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA VCEsat VCEsat – – – – 0.3 0.7 V V Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA VBEsat VBEsat – – – – 1.25 2 V V Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 V(BR)CEO 45 – – V Collector-Base Breakdown Voltage at IC = 10µA, IB = 0 V(BR)CBO 75 – – V Emitter-Base Breakdown Voltage at IE = 10µA, IC = 0 V(BR)EBO 5 – – V Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150°C ICBO ICBO – – – – 20 20 nA µA IEBO – – 20 nA fT – 170 – MHZ Collector-Base Capacitance at VCB = 10V, f = 1MHz CCB – 6 – pF Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz CEB – 60 – pF DC Current Gain(1) at VCE = 10V, IC = 100µA at VCE = 1V, IC = 10mA at VCE = 1V, IC = 100mA at VCE = 2V, IC = 500mA Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 5V, IC = 50mA, f = 20MHz Note: (1) Pulse test: t ≤ 300µs, D = 2% www.vishay.com 2 Document Number 88172 09-May-02 BCW66G Vishay Semiconductors formerly General Semiconductor Fig. 1 - Switching Waveforms INPUT 90% 10% t on t off 10% 90% 90% OUTPUT 10% td Document Number 88172 09-May-02 tr ts tf www.vishay.com 3