BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) ● 45 W at 25°C Case Temperature ● 5 A Continuous Collector Current B 1 ● Up to 120 V VCEO rating C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD539 BD539B 60 VCBO 80 BD539C 100 BD539D 120 BD539 40 BD539B V 60 BD539A Collector-emitter voltage (see Note 1) UNIT 40 BD539A Collector-base voltage VALUE VCEO 80 V 100 BD539C 120 BD539D V EBO 5 IC 5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 45 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Operating free air temperature range TA -65 to +150 °C °C Emitter-base voltage Continuous collector current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds V Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE(on) hfe |hfe| TEST CONDITIONS Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IC = 30 mA MIN IB = 0 (see Note 4) BD539 40 BD539A 60 BD539B 80 BD539C 100 BD539D 120 TYP MAX V VCE = 40 V VBE = 0 BD539 0.2 V CE = 60 V V BE = 0 BD539A 0.2 V CE = 80 V V BE = 0 BD539B 0.2 V CE = 100 V V BE = 0 BD539C 0.2 V CE = 120 V V BE = 0 BD539D 0.2 VCE = 30 V IB = 0 BD539/539A 0.3 V CE = 60 V IB = 0 BD539B/539C 0.3 V CE = 90 V IB = 0 BD539D 0.3 VEB = 5V IC = 0 1 VCE = 4V IC = 0.5 A V CE = 4V IC = 1A V CE = 4V IC = 3A IB = 125 mA IC = 1A IB = 375 mA IC = 3A IB = 1A IC = 5A VCE = 4V IC = 3A UNIT mA mA mA 40 (see Notes 4 and 5) 30 12 0.25 (see Notes 4 and 5) 0.8 V 1.5 (see Notes 4 and 5) VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 1.25 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 2.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time V BE(off) = -4.3 V RL = 30 Ω tp = 20 µs, dc ≤ 2% Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP 0.5 µs 2 µs BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V tp = 300 µs, duty cycle < 2% TC = 25°C TC = 80°C 100 10 0·01 0·1 1·0 10 TCS631AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AH 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·0 0·1 IC = 100 mA IC = 300 mA IC = 1 A IC = 3 A 0·01 0·1 IC - Collector Current - A 1·0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 TCS631AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 0·9 0·8 0·7 0·6 0·5 0·01 0·1 1·0 10 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS631AI 1·0 0·1 BD539 BD539A BD539B BD539C BD539D 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AC Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION