POINN BD745A

BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
●
AUGUST 1978 - REVISED MARCH 1997
Designed for Complementary Use with the
BD746 Series
●
115 W at 25°C Case Temperature
●
20 A Continuous Collector Current
●
25 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD745
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BD745A
BD745B
VALUE
VCBO
70
90
BD745C
110
BD745
45
BD745A
BD745B
UNIT
50
VCEO
BD745C
60
80
V
V
100
V EBO
5
V
IC
20
A
ICM
25
A
IB
7
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
115
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
½LIC 2
90
mJ
Operating free air temperature range
TA
-65 to +150
°C
Operating junction temperature range
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V (BR)CEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
TEST CONDITIONS
Collector-emitter
MIN
45
BD745A
60
BD745B
80
BD745C
100
TYP
MAX
IC = 30 mA
IB = 0
VCE = 50 V
VBE = 0
BD745
0.1
V CE = 70 V
VBE = 0
BD745A
0.1
V CE = 90 V
VBE = 0
BD745B
0.1
Collector cut-off
V CE = 110 V
VBE = 0
BD745C
0.1
current
V CE = 50 V
VBE = 0
TC = 125°C
BD745
5
V CE = 70 V
VBE = 0
TC = 125°C
BD745A
5
V CE = 90 V
VBE = 0
TC = 125°C
BD745B
5
V CE = 110 V
VBE = 0
TC = 125°C
BD745C
Collector cut-off
VCE = 30 V
IB = 0
BD745/745A
0.1
current
V CE = 60 V
IB = 0
BD745B/745C
0.1
VEB =
5V
IC = 0
breakdown voltage
Emitter cut-off
current
Forward current
transfer ratio
VCE =
4V
IC = 1 A
V CE =
4V
IC = 5 A
V CE =
4V
IC = 20 A
Collector-emitter
IB =
0.5 A
IC = 5 A
saturation voltage
IB =
5A
IC = 20 A
(see Note 5)
BD745
0.5
20
mA
150
1
(see Notes 5 and 6)
3
VCE =
4V
IC = 5 A
4V
IC = 20 A
VCE = 10 V
IC = 1 A
f = 1 kHz
25
VCE = 10 V
IC = 1 A
f = 1 MHz
5
current transfer ratio
mA
5
V CE =
Small signal forward
mA
40
(see Notes 5 and 6)
voltage
current transfer ratio
V
5
Base-emitter
Small signal forward
UNIT
1
(see Notes 5 and 6)
3
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.1
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
TYP
td
Delay time
20
ns
tr
Rise time
IC = 5 A
IB(on) = 0.5 A
IB(off) = -0.5 A
350
ns
ts
Storage time
V BE(off) = -4.2 V
RL = 6 Ω
tp = 20 µs, dc ≤ 2%
500
ns
tf
Fall time
400
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
hFE - DC Current Gain
TC = 125°C
TC = 25°C
TC = -55°C
VCE = 4 V
t p = 300 µs, duty cycle < 2%
10
0·1
1·0
10
100
TCS635AF
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS635AE
100
IC
= 10
IB
tp = 300µs, duty cycle < 2%
1·0
0·1
TC = -55°C
TC = 25°C
TC = 125°C
0·01
0·1
1·0
IC - Collector Current - A
10
100
IC - Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS635AC
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
tp = 50 ms,
d = 0.1 = 10%
DC Operation
10
1·0
0·1
BD745
BD745A
BD745B
BD745C
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 3.
PRODUCT
INFORMATION
3
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS635AB
Ptot - Maximum Power Dissipation - W
120
100
80
60
40
20
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 4.
PRODUCT
4
INFORMATION
125
150
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
MDXXAW
INFORMATION
5
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION