SEME-LAB BFX40

BFX38
BFX39
BFX40
BFX41
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON EPITAXIAL
TRANSISTOR
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
APPLICATIONS
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
• General Purpose Industrial Applications
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9 m a x .
(0 .0 3 5 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
DESCRIPTION
5 .0 8 (0 .2 0 0 )
ty p .
!
2 .5 4
(0 .1 0 0 )
The BFX38-41 are ailicon planar epitaxial
PNP transitors in Jedec TO39 metal case,
designed for a wide variety of applications.
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
4 5 °
TO39 PACKAGE
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
BFX38
BFX39
BFX40
BFX41
-75V
VCBO
Collector – Base Voltage
-55V
VCEO
Collector – Emitter Voltage
-55V
-75V
VEBO
Emitter – Base Voltage
-5V
IC
Collector Current
-1A
Ptot
Total Power Dissipation Tamb < 25°C
Tcase < 25°C
Tstg,Tj
Storage and Junction Temperature
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
0.8W
4W
–55 to 200°C
Prelim.9/00
BFX38
BFX39
BFX40
BFX41
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
ICBO
V(BR)CBO
Collector Cutoff Current
Collector-Base Breakdown Voltage
Test Conditions
BFX38
VCB = - 40V
BFX39
Tamb = 125°C
BFX40
VCB = - 50V
BFX41
Tamb = 125°C
BFX38
IC = -10mA
IE = 0
IC = -10mA
IE = 0
- 75
IC = -10mA
IE = 0
-55
IC = -10mA
IE = 0
-75
IE = 10mA
IC = 0
-5
BFX39
BFX40
BFX41
BFX38
VCEO(SUS)*
Collector Emitter Sustaining
BFX39
Voltage
BFX40
BFX41
V(BR)EBO
VCE(SAT)*
VBE(SAT)*
Emitter - Base
Breakdown Voltage
Collector- Emitter Saturation
Voltage
Base - Emitter Saturation
Voltage
Min.
ALL
IE = 0
IE = 0
Typ.
Max.
Unit
- 0.2
- 50
nA
-0.25
-50
mA
- 0.2
- 50
nA
-0.25
-50
mA
-55
V
V
V
IE = -15mA
- 0.12
- 0.15
IC = - 500mA IE = - 50mA
- 0.3
- 0.5
IC = -150mA
IE = -15mA
- 0.8
- 0.9
IC = - 500mA IE = - 50mA
BFX38 BFX40
-0.9
-1.1
ALL
ALL
IC = -150mA
IC = - 100mA
VCE = - 5V
60
90
*IC = - 100mA VCE = - 5V
85
130
*IC = - 500mA VCE = - 5V
60
120
VCE = - 5V
30
45
*IC = - 100mA VCE = - 5V
40
70
*IC = - 500mA VCE = - 5V
25
65
V
V
BFX39 BFX41
IC = - 100mA
hFE
DC Current Gain
*IC = - 1A
VCE = - 5V
BFX38
30
BFX39
15
BFX40
25
BFX41
10
—
*IC = - 100mA VCE = - 5V
Tamb = - 55°C
Semelab plc.
BFX38 BFX40
30
BFX39 BFX41
15
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim.9/00
BFX38
BFX39
BFX40
BFX41
Parameter
fT
Transitions Frequency
CEBO
Emitter - Base Capacitance
CCBO
Collector - Base Capacitance
ton
Turn-on time
ts
Storage Time
tf
Fall Time
Test Conditions
IC = -50mA
VCE = -10V
f =100MHz
IC = 0
VEB = -0.5V
f =1MHz
IE = 0
VCB = -10V
f =1MHz
IC = - 500mA
VCC = -30V
IB1 = -50mA
IC = - 500mA
VCC = - 30V
IB1 = - IB2 = -50mA
IC = - 500mA
VCC = - 30V
IB1 = - IB2 = -50mA
Min.
Typ.
100
150
75
Max.
Unit
MHz
120
pF
15
20
33
100
160
350
27
50
ns
* Pulsed: pulse duration = 300ms, duty cycle = 1%
THERMAL CHARACTERISTICS
Rqth(j-case) Thermal Resistance Junction to case
44
°C/W
Rqth(j-amb)
219
°C/W
Thermal Resistance Junction to ambient
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim.9/00