DYNEX GP200MHS12

GP200MHS12
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5
FEATURES
■
Non Punch Through Silicon
■
Isolated Copper Baseplate
■
Low Inductance Internal Construction
DS5296-1.5 November 2000
KEY PARAMETERS
VCES
(typ)
VCE(sat)
(max)
IC
(max)
IC(PK)
1200V
2.7V
200A
400A
APPLICATIONS
■
High Power Inverters
■
Motor Controllers
■
Induction Heating
■
6(G2)
11(C2)
Resonant Converters
7(E2)
3(C1)
2(E2)
1(E1C2)
5(E1)
9(C1)
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
4(G1)
The GP200MHS12 is a half bridge 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
Fig. 1 Half bridge circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
11
10
1
2
3
6
7
GP200MHS12
Note: When ordering, please use the whole part number.
8
9
5
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
GP200MHS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1200
V
±20
V
Collector current
DC, Tcase = 72˚C
200
A
IC(PK)
Peak collector current
1ms, Tcase = 72˚C
400
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
1490
W
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
Min.
Max.
Units
-
84
˚C/kW
-
160
˚C/kW
-
15
˚C/kW
Transistor
-
150
˚C
Diode
-
125
˚C
–40
125
˚C
Mounting - M6
-
5
Nm
Electrical connections - M6
-
5
Nm
IC
THERMAL AND MECHANICAL RATINGS
Rth(j-c)
Test Conditions
Parameter
Symbol
Thermal resistance - transistor (per arm)
Continuous dissipation junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
Tj
Tstg
-
2/10
Junction temperature
Storage temperature range
Screw torque
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP200MHS12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
12
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
±1
µA
VGE(TH)
Gate threshold voltage
IC = 10mA, VGE = VCE
4.5
-
6.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 200A
-
2.7
3.5
V
VGE = 15V, IC = 200A, , Tcase = 125˚C
-
3.2
4.0
V
ICES
IGES
Test Conditions
Parameter
Symbol
Collector cut-off current
IF
Diode forward current
DC
-
-
200
A
IFM
Diode maximum forward current
tp = 1ms
-
-
400
A
VF
Diode forward voltage
IF = 200A
-
2.2
2.4
V
IF = 200A, Tcase = 125˚C
-
2.3
2.5
V
VCE = 25V, VGE = 0V, f = 1MHz
-
25
-
nF
-
30
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
GP200MHS12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 200A
-
500
700
ns
Fall time
VGE = ±15V
-
150
200
ns
EOFF
Turn-off energy loss
VCE = 600V
-
25
35
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
400
550
ns
L ~ 100nH
-
80
110
ns
-
20
30
mJ
-
13
20
µC
Min.
Typ.
Max.
Units
IC = 200A
-
600
800
ns
Fall time
VGE = ±15V
-
200
250
ns
EOFF
Turn-off energy loss
VCE = 600V
-
40
50
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
500
650
ns
L ~ 100nH
-
110
150
ns
-
40
55
mJ
-
35
45
µC
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 200A, VR = 50% VCES,
dIF/dt = 2500A/µs
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 200A, VR = 50% VCES,
dIF/dt = 2000A/µs
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP200MHS12
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
Vge = 20/15/12/10V
400
400
350
Common emitter
Tcase = 25˚C
350
300
Collector current, IC - (A)
Collector current, IC - (A)
300
250
200
150
250
200
150
100
100
50
50
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
0
0
5.0
Fig. 3 Typical output characteristics
5.0
50
Tj = 125˚C
VGE = ±15V
50 VCE = 600V
Tj = 125˚C
45 VGE = ±15V
VCE = 600V
40
A
Turn-off energy, EOFF - (mJ)
Turn-on energy, EON - (mJ)
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
60
B
40
C
30
20
A
B
C
35
30
25
20
15
10
10
0
0
Common emitter
Tcase = 125˚C
A: Rg = 10Ω
B: Rg = 6.2Ω
C: Rg = 4.7Ω
50
100
150
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
200
A: Rg = 10Ω
B: Rg = 6.2Ω
C: Rg = 4.7Ω
5
0
0
50
100
150
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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200
5/10
GP200MHS12
18
16
14
700
12
Tcase = 25˚C
10
8
6
600
td(off)
500
td(on)
400
300
4
200
2
100
0
0
25
50
Tj = 125˚C
VGE = ±15V
VCE = 600V
Rg = 4.7Ω
800
Tcase = 125˚C
Switching times, - (ns)
Diode turn-off energy, Eoff(diode) - (mJ)
900
VGE = ±15V
VCE = 900V
75
100
125
150
175
0
0
200
Collector current, IT - (A)
Fig. 7 Diode typical turn-off energy vs collector current
tf
tr
50
100
150
Collector current, IC - (A)
200
Fig. 8 Typical switching characteristics
10000
400
350
1000
Tj = 25˚C
Collector current, IC - (A)
Forward current, IF - (A)
300
Tj = 125˚C
250
200
150
100
IC max. (single pulse)
IC
100
50µs
m
ax
.D
C
100µs
(c
on
tin
uo
us
10
)
tp = 1ms
50
0
1
0
0.5
1
1.5
2
2.5
Forward voltage, VF - (V)
3
Fig. 9 Diode typical forward characteristics
6/10
3.5
1
10
100
1000
Collector-emitter voltage, Vce - (V)
10000
Fig. 10 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP200MHS12
500
Transient thermal impedance, Zth (j-c) - (°C/kW )
1000
450
Collector current, IC - (A)
400
350
300
250
200
150
100
Tcase = 125˚C
Vge = ±15V
Rg = 4.7Ω*
*Recommended minimum value
50
0
0
200
1000
600
400
800
Collector-emitter voltage, Vce - (V)
Diode
Transistor
100
10
1
0.001
1200
0.01
0.1
Pulse width, tp - (s)
1
10
RBSOA
Fig. 12 Transient thermal impedance
Fig. 11 Forward bias safe operating area
320
500
450
240
350
Collector current, IC - (A)
Inverter phase current, IC(PK) - (A)
400
280
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
300
250
200
150
200
160
120
80
100
Conditions:
50 Tj = 125°C, Tc = 75°C,
Rg = 4.7Ω, VCC = 600V
0
1
10
fmax - (kHz)
Fig. 13 3 Phase inverter operating frequency
40
0
50
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Case temperature, Tcase - (˚C)
Fig. 14 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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7/10
GP200MHS12
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
28 ± 0.5
28 ± 0.5
6
62 ± 0.8
48 ± 0.3
11
1
10
2
3
7
4x Fast on
tabs
8
5
9
4
93 ± 0.3
3x M6
23
38max
8
106 ± 0.8
108 ± 0.8
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)
Module outline type code: M
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP200MHS12
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving high power IGBTs with Concept gate drivers
AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
GP200MHS12
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5296-1 Issue No.1.5 November 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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