DYNEX GP1201FSS18

GP1201FSS18
GP1201FSS18
Single Switch Low VCE(SAT) IGBT Module
DS5411-1.1 January 2001
FEATURES
■
Low VCE(SAT)
■
Non Punch Through Silicon
■
Isolated Copper Baseplate
■
Low Inductance Internal Construction
■
1200A Per Module
KEY PARAMETERS
VCES
(typ)
VCE(sat)
(max)
IC
(max)
IC(PK)
1800V
2.6V
1200A
2400A
External connection
APPLICATIONS
■
High Reliability Inverters
■
Motor Controllers
■
Traction Drives
■
Resonant Converters
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
C2
G
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1201FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
C1
Aux C
E1
C1
E2
C2
Aux E
G
ORDERING INFORMATION
Order As:
GP1201FSS18
Note: When ordering, please use the whole part number.
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1201FSS18
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
Parameter
VGE = 0V
-
Max.
Units
1800
V
±20
V
Continuous collector current
Tcase = 65˚C
1200
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
2400
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
8.5
kW
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
Min.
Max.
Units
-
15
˚C/kW
-
30
˚C/kW
-
8
˚C/kW
Transistor
-
150
˚C
Diode
-
125
˚C
–40
125
˚C
Mounting - M6
-
5
Nm
Electrical connections - M4
-
2
Nm
Electrical connections - M8
-
10
Nm
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Test Conditions
Parameter
Thermal resistance - transistor
Continuous dissipation junction to case
Rth(j-c)
Thermal resistance - diode
Continuous dissipation junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
Tj
Tstg
-
2/9
Junction temperature
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1201FSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
25
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
4
µA
VGE(TH)
Gate threshold voltage
IC = 60mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 1200A
-
2.6
3.2
V
VGE = 15V, IC = 1200A, Tcase = 125˚C
-
3.3
4
V
ICES
IGES
Test Conditions
Parameter
Symbol
Collector cut-off current
IF
Diode forward current
DC
-
-
1200
A
IFM
Diode maximum forward current
tp = 1ms
-
-
2400
A
VF
Diode forward voltage
IF = 1200A
-
2.2
2.5
V
IF = 1200A, Tcase = 125˚C
-
2.3
2.6
V
VCE = 25V, VGE = 0V, f = 1MHz
-
135
-
nF
-
20
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1201FSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 1200A
-
1050
1250
ns
Fall time
VGE = ±15V
-
180
250
ns
EOFF
Turn-off energy loss
VCE = 900V
-
850
1000
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
300
400
ns
L ~ 50nH
-
250
400
ns
-
500
700
mJ
IF = 1200A, VR = 50% VCES,
-
250
350
µC
dIF/dt = 4500A/µs
-
500
-
A
-
180
-
mJ
Test Conditions
Min.
Typ.
Max.
Units
IC = 1200A
-
1150
1350
ns
Fall time
VGE = ±15V
-
200
350
ns
EOFF
Turn-off energy loss
VCE = 900V
-
1150
1350
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
400
550
ns
L ~ 50nH
-
300
450
ns
-
700
900
mJ
IF = 1200A, VR = 50% VCES,
-
425
550
µC
dIF/dt = 4000A/µs
-
600
-
A
-
250
-
mJ
Symbol
td(off)
tf
tr
Parameter
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Test Conditions
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
4/9
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1201FSS18
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
Vge = 20/15/12/10V
2400
Common emitter
2200 Tcase = 25˚C
Common emitter
2200 Tcase = 125˚C
2000
2000
1800
1800
Collector current, Ic - (A)
Collector current, Ic - (A)
2400
1600
1400
1200
1000
800
1600
1400
1200
1000
800
600
600
400
400
200
200
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
0
0
5.0
Fig. 3 Typical output characteristics
1.2
1.1
1.0
0.9
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
6.0
Fig. 4 Typical output characteristics
3.2
Tcase = 125˚C
VGE = 15V
VCE = 900V
RG = 2.2Ω
L = 50nH
EOFF
2.8
2.4
Tcase = 125˚C
VGE = 15V
VCE = 900V
IC = 1200A
L = 50nH
EON
2.0
EON
0.7
Energy - (J)
Energy - (J)
0.8
0.6
0.5
1.6
EOFF
1.2
0.4
EREC
0.3
0.8
0.2
0.4
EREC
0.1
0
0
200
600
400
800
Collector current, IC - (A)
1000
1200
Fig. 5 Typical switching energy vs collector current
0
0
1
2
4
3
5
6
7
Gate resistance, RG - (Ohms)
9
10
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/9
GP1201FSS18
3000
2400
2200
2000
2500
Tj = 25˚C
Collector current, IC - (A)
Forward current, IF - (A)
1800
2000
1600
1400
Tj = 125˚C
1200
1000
1500
1000
800
600
Tcase = 125˚C
500 Vge = ±15V
Rg(off) = 2.2Ω
400
200
0
0
0.5
2.0
1.0
1.5
2.5
Foward voltage, VF - (V)
3.0
3.5
Fig. 7 Diode typical forward characteristics
0
0
1200
400
800
1600
Collector-emitter voltage, Vce - (V)
2000
Fig. 8 Reverse bias safe operating area
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
Diode
Transistor
10
1
0.1
1
10
100
Pulse width, tp - (ms)
1000
10000
Fig. 9 Transient thermal impedance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1201FSS18
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
62
62
15
15
5
E1
C1
E2
C2
65
6
57
18
Aux E
18.5
16
2.5
Aux C
14.5 11
43.3
57
65
G
20
35
6x Ø7
4x M8
38
28
31.5
6x M4
5
140
Nominal weight: 1600g
Module outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1201FSS18
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
AN4506
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers
AN5384
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
8/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP1201FSS18
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5411-1 Issue No. 1.1 January 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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