GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives ■ Resonant Converters 1800V 3.5V 2400A 4800A External connection C1 C2 C3 E2 E3 Aux C G The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP2400ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. Aux E E1 External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. ORDERING INFORMATION Order As: GP2400ESM18 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP2400ESM18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions Parameter VGE = 0V - Max. Units 1800 V ±20 V Continuous collector current Tcase = 65˚C 2400 A IC(PK) Peak collector current 1ms, Tcase = 110˚C 4800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tvj = 150˚C 20.8 kW Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units - 6 ˚C/kW - 14 ˚C/kW - 6 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/10 Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP2400ESM18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 3 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 100 mA Gate leakage current VGE = ±20V, VCE = 0V - - 12 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 2400A - 3.5 4 V VGE = 15V, IC = 2400A, Tcase = 125˚C - 4.3 5 V ICES IGES Test Conditions Parameter Symbol Collector cut-off current IF Diode forward current DC, Tvj = 125˚C - - 2400 A IFM Diode maximum forward current tp = 1ms - - 4800 A VF Diode forward voltage IF = 2400A - 2.2 2.5 V IF = 2400A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 270 - nF - 10 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP2400ESM18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 2400A - 2050 2300 ns Fall time VGE = ±15V - 250 350 ns EOFF Turn-off energy loss VCE = 900V - 1100 1350 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 500 750 ns L ~ 50nH - 400 600 ns - 850 1000 mJ IF = 2400A, VR = 50% VCES, - 500 650 µC dIF/dt = 6000A/µs - 1000 - A - 350 - mJ Test Conditions Min. Typ. Max. Units IC = 2400A - 2250 2600 ns Fall time VGE = ±15V - 250 350 ns EOFF Turn-off energy loss VCE = 900V - 1350 1650 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 600 850 ns L ~ 50nH - 450 700 ns - 1300 1500 mJ IF = 2400A, VR = 50% VCES, - 850 1000 µC dIF/dt = 5000A/µs - 1200 - A - 500 - mJ Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC 4/10 Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP2400ESM18 TYPICAL CHARACTERISTICS Vge = 20/15/12V Vge = 20/15/12V 4800 4800 4200 Common emitter Tcase = 25˚C 4200 3600 Vge = 10V Collector current, IC - (A) Collector current, Ic - (A) 3600 3000 2400 1800 2400 1800 1200 600 600 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 0 0 7.0 Fig. 3 Typical output characteristics 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage, Vce - (V) 4.0 Tcase = 125˚C VGE = 15V VCE = 900V RG = 2.2Ω L = 50nH 3.5 3.0 1.0 EOFF Tcase = 125˚C VGE = 15V VCE = 900V IC = 2400A L = 50nH EOFF EON 0.6 EREC 0.4 Energy - (J) Energy - (J) 2.5 0.8 EON 2.0 1.5 1.0 0.2 0 0 9.0 10.0 Fig. 4 Typical output characteristics 1.4 1.2 Vge = 10V 3000 1200 0 0 Common emitter Tcase = 125˚C 0.5 400 1200 800 1600 Collector current, IC - (A) 2000 2400 Fig. 5 Typical switching energy vs collector current 0 0 EREC 1 2 3 5 6 7 4 Gate resistance, RG - (Ohms) 9 10 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 8 5/10 GP2400ESM18 6000 4800 4200 5000 Tj = 25˚C Collector current, IC - (A) 3600 Foward current, IF - (A) 4000 3000 Tj = 125˚C 2400 1800 3000 2000 1200 Tcase = 125˚C 1000 Vge = ±15V Rg(off) = 2.2Ω 600 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 0 0 3.5 Fig. 7 Diode typical forward characteristics 2000 1200 400 800 1600 Collector-emitter voltage, Vce - (V) Fig. 8 Reverse bias safe operating area 100 10000 50 Transient thermal impedance, Zth (j-c) - (¡C/kW ) IC max. (single pulse) µs 0µ s Collector current, IC - (A) 10 1000 tp IC = 1m s m ax .D 100 C (c on tin uo us ) 10 10 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig. 9 Forward bias safe operating area 10000 Transistor 1 0.1 1 6/10 Diode 1 10 100 Pulse width, tp - (ms) 1000 10000 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP2400ESM18 3500 DC collector current, IC - (A) 3000 2500 2000 1500 1000 500 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig. 11 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/10 GP2400ESM18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP2400ESM18 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency AN4506 AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP2400ESM18 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5306-1 Issue No. 1.1 January 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com