Si4948BEY Vishay Siliconix New Product Dual P-Channel 60-V (D-S) 175_ MOSFET PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V −3.1 0.150 @ VGS = −4.5 V −2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4948BEY—E3 (Lead Free) Si4948BEY-T1—E3 (Lead Free with Tape and Reel) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS L = 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range −2.4 −2.6 −2.0 −25 A −2 −1.1 IAS 15 EAS 11 PD V −3.1 IDM Continuous Source Current (Diode Conduction)a Avalanche Current ID mJ 2.4 1.4 1.7 0.95 TJ, Tstg Unit −55 to 175 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 53 62.5 85 110 30 37 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72847 S-40430—Rev. A, 15-Mar-04 www.vishay.com 1 Si4948BEY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1 Typ Max Unit −3 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "20 V Diode Forward Voltagea −1 −10 VDS = −5 V, VGS = −10 V rDS(on) Forward Transconductancea VDS = −60 V, VGS = 0 V VDS = −60 V, VGS = 0 V, TJ = 70_C mA −25 A VGS = −10 V, ID = −3.1 A 0.100 0.120 VGS = −4.5 V, ID = −0.2 A 0.126 0.150 gfs VDS = −15 V, ID = −3.1 A 8.5 VSD IS = −2 A, VGS = 0 V −0.8 −1.2 14.5 22 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = −30 V, VGS = −10 V, ID = −3.1 A 2.2 3.7 f = 1 MHz 14 td(on) Rise Time tr Turn-Off Delay Time VDD = −30 V, RL = 30 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = −2 A, di/dt = 100 A/ms W 10 15 15 22 50 75 35 55 30 50 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 25 25 VGS = 10 thru 5 V 20 I D − Drain Current (A) I D − Drain Current (A) 20 15 4V 10 5 15 10 TC = 125_C 5 25_C 3V 0 0 1 2 3 4 5 6 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 −55_C 0 7 8 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72847 S-40430—Rev. A, 15-Mar-04 Si4948BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1000 0.35 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.40 0.30 0.25 VGS = 4.5 V 0.20 VGS = 10 V 0.15 0.10 800 Ciss 600 400 200 Coss 0.05 0.00 Crss 0 0 5 10 15 20 25 0 10 ID − Drain Current (A) 30 40 50 60 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.2 VDS = 30 V ID = 3.1 A VGS = 10 V ID = 3.1 A 2.0 8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 20 6 4 2 1.8 1.6 1.4 1.2 1.0 0.8 0 0 3 6 9 12 0.6 −50 15 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 175 On-Resistance vs. Gate-to-Source Voltage 0.40 0.35 r DS(on) − On-Resistance ( W ) TJ = 150_C I S − Source Current (A) 50 TJ − Junction Temperature (_C) 20 10 TJ = 25_C 1 0.0 25 0.30 0.25 ID = 3.1 A 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72847 S-40430—Rev. A, 15-Mar-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4948BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 50 0.4 40 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.0 30 20 10 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 TJ − Temperature (_C) 100 10 I D − Drain Current (A) 1 10 100 600 Time (sec) Safe Operating Area, Junction-to-Case IDM Limited Limited by rDS(on) P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited 0.1 P(t) = 0.01 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 P(t) = 1 P(t) = 10 dc 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72847 S-40430—Rev. A, 15-Mar-04 Si4948BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72847 S-40430—Rev. A, 15-Mar-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5