Si7402DN Vishay Siliconix New Product N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 12 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile ID (A) 0.0057 @ VGS = 4.5 V 20 0.0067 @ VGS = 2.5 V 18.8 0.0085 @ VGS = 1.8 V 16.5 APPLICATIONS D PA Switch, Load Switch and Battery Switch for Portable Devices D Point-of-Load for 5-V or 3.3-V BUS Stepdown PowerPAK 1212-8 D S 3.30 mm 1 2 3.30 mm S 3 S 4 G G D 8 7 D 6 D 5 D S Bottom View N-Channel MOSFET Ordering Information: Si7402DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 20 13 16 IDM 10 50 3.2 1.3 3.8 1.5 2.4 1.0 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 24 33 65 81 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72646 S-32522—Rev. A, 08-Dec-03 www.vishay.com 1 Si7402DN Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.45 IGSS Typ Max Unit 0.85 V VDS = 0 V, VGS = "8 V "100 nA VDS = 12 V, VGS = 0 V 1 VDS = 12 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward 50 VDS w 5 V, VGS = 4.5 V A VGS = 4.5 V, ID = 20 A 0.0045 0.0057 rDS(on) VGS = 2.5 V, ID = 18 A 0.0053 0.0067 VGS = 1.8 V, ID = 1 A 0.0065 0.0085 gfs VDS = 10 V, ID = 20 A 100 VSD IS = 3.2 A, VGS = 0 V 0.70 1.2 36 55 Forward Transconductancea Voltagea mA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 9.5 Rg 1.8 td(on) 35 55 65 100 110 165 60 90 40 80 Gate Resistance Turn-On Delay Time Rise Time VDS = 6 V, VGS = 4.5 V, ID = 20 A tr Turn-Off Delay Time VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 4 IF = 2.3 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 Transfer Characteristics 50 VGS = 5 thru 2 V 1.5 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 30 20 TC = 125_C 25_C 10 1V −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VGS − Gate-to-Source Voltage (V) Document Number: 72646 S-32522—Rev. A, 08-Dec-03 Si7402DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 Capacitance 4000 Ciss 0.009 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 3500 0.012 VGS = 1.8 V VGS = 2.5 V 0.006 2500 2000 1500 Coss 1000 VGS = 4.5 V 0.003 3000 Crss 500 0.000 0 0 10 20 30 40 0 50 2 Gate Charge r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 3 2 1 0 0 5 10 15 20 25 30 35 12 1.2 1.0 0.8 0.6 −50 40 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.010 r DS(on) − On-Resistance ( W ) 50 I S − Source Current (A) 10 VGS = 4.5 V ID = 20 A 1.4 Qg − Total Gate Charge (nC) TJ = 150_C 10 TJ = 25_C 1 0.0 8 On-Resistance vs. Junction Temperature 1.6 VDS = 6 V ID = 20 A 4 6 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 4 0.008 ID = 15 A 0.006 0.004 0.002 0.000 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72646 S-32522—Rev. A, 08-Dec-03 1.2 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7402DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.3 50 0.2 ID = 250 mA 40 −0.0 Power (W) V GS(th) Variance (V) 0.1 −0.1 −0.2 30 20 −0.3 10 −0.4 −0.5 −50 −25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ − Temperature (_C) 100 1000 Time (sec) Safe Operating Area 1000 100 I D − Drain Current (A) 10 Limited by rDS(on) 100 ms, 10 ms 1 ms 10 10 ms 100 ms 1 1s 10 s 0.1 TA = 25_C Single Pulse dc, 100 s 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72646 S-32522—Rev. A, 08-Dec-03 Si7402DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 72646 S-32522—Rev. A, 08-Dec-03 www.vishay.com 5