VISHAY SI1400DL

Si1400DL
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.150 @ VGS = 4.5 V
1.7
0.235 @ VGS = 2.5 V
1.3
20
SOT-363
SC-70 (6-LEADS)
1
6
D
D
2
5
D
G
3
4
S
Marking Code
ND
XX
YY
D
Lot Traceability
and Date Code
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"12
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
ID
TA = 85_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
1.7
1.6
1.2
1.0
IDM
Unit
A
5
0.8
0.8
0.625
0.568
0.40
0.295
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
165
200
180
220
105
130
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71179
S-05630—Rev. B, 11-Feb-02
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Si1400DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
0.6
IGSS
VDS = 0 V, VGS = "12 V
"100
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 85_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS w 5 V, VGS = 4.5 V
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
V
nA
m
mA
2
A
VGS = 4.5 V, ID = 1.7 A
0.123
0.150
VGS = 2.5 V, ID = 1.3 A
0.195
0.235
gfs
VDS = 10 V, ID = 1.7 A
5
VSD
IS = 0.8 A, VGS = 0 V
0.78
1.1
2.1
4.0
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.4
Turn-On Delay Time
td(on)
10
17
30
50
14
25
8
15
30
50
Rise Time
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
tr
Turn-Off Delay Time
VDD = 10 V, RL = 20 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
0.3
IF = 0.8 A, di/dt = 100 A/ms
nC
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
5
5
2.5 V
VGS = 4.5 thru 3 V
4
I D – Drain Current (A)
I D – Drain Current (A)
4
3
2
2V
1
3
2
TC = 125_C
1
25_C
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
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–55_C
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71179
S-05630—Rev. B, 11-Feb-02
Si1400DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
300
0.4
240
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
On-Resistance vs. Drain Current
0.5
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
Ciss
180
120
Coss
0.1
60
Crss
0.0
0
0
1
2
3
4
5
0
4
ID – Drain Current (A)
Gate Charge
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
3.6
2.7
1.8
0.9
VGS = 4.5 V
ID = 1.7 A
1.6
1.4
1.2
1.0
0.8
0.5
1.0
1.5
2.0
0.6
–50
2.5
–25
0
Qg – Total Gate Charge (nC)
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
r DS(on) – On-Resistance ( W )
10
I S – Source Current (A)
16
1.8
VDS = 10 V
ID = 1.7 A
TJ = 150_C
1
TJ = 25_C
0.1
0.0
12
VDS – Drain-to-Source Voltage (V)
4.5
0.0
0.0
8
0.32
ID = 1.7 A
0.24
0.16
0.08
0.00
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71179
S-05630—Rev. B, 11-Feb-02
1.2
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
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Si1400DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
10
8
ID = 250 mA
Power (W)
V GS(th) Variance (V)
0.2
–0.0
–0.2
6
4
2
–0.4
–0.6
–50
–25
0
25
50
75
100
125
150
0
0.01
1
0.1
TJ – Temperature (_C)
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA =400_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
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10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71179
S-05630—Rev. B, 11-Feb-02