Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.85 0.065 @ VGS = - 2.5 V - 3.4 0.100 @ VGS = - 1.8 V - 2.7 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2315BDS-T1 2 Top View Si2315BDS *(M5) *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA= 25_C TA= 70_C Pulsed Drain Currenta ID Continuous Source Current (Diode Conduction)a IS TA= 25_C Power Dissipationa TA= 70_C Operating Junction and Storage Temperature Range PD V - 3.85 - 3.0 - 3.0 IDM - 2.45 A - 12 - 1.0 - 0.62 1.19 0.75 0.76 0.48 TJ, Tstg Unit W - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 sec. M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 85 105 130 166 60 75 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72014 S-31990—Rev. D, 13-Oct-03 www.vishay.com 1 Si2315BDS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = - 10 mA - 12 VGS(th) VDS = VGS, ID = - 250 mA - 0.45 IGSS Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage rDS(on) ( ) - 0.90 VDS = 0 V, VGS = "8 V "100 VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55_C - 10 VDS v - 5 V, VGS = - 4.5 V -6 VDS v - 5 V, VGS = - 2.5 V -3 V nA mA A VGS = - 4.5 V, ID = - 3.85 A 0.040 0.050 VGS = - 2.5 V, ID = - 3.4 A 0.050 0.065 0.100 VGS = - 1.8 V, ID = - 2.7 A 0.071 gfs VDS = - 5 V, ID = - 3.85 A 7 VSD IS = - 1.6 A, VGS = 0 V W S - 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 8 VDS = - 6 V, VGS = - 4.5 V ID ^ - 3.85 A 15 1.1 nC 2.3 715 VDS = - 6 V, VGS = 0, f = 1 MHz 275 pF 200 Switchingb Turn On Time Turn-On Turn-Off Time td(on) tr td(off) VDD = - 6 V, RL = 6 W ID ^ - 1.0 10A A, VGEN = - 4.5 45V RG = 6 W tf 15 20 35 50 50 70 50 75 ns Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 72014 S-31990—Rev. D, 13-Oct-03 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 10 VGS = 4.5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 10 Transfer Characteristics 12 6 1.5 V 4 8 6 4 TC = 125_C 2 2 0 0 0.0 25_C - 55_C 0 1 2 3 4 5 6 0.5 VDS - Drain-to-Source Voltage (V) 2.0 2.5 Capacitance 1200 0.25 1000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1.0 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V 0.05 Ciss 800 600 400 Coss Crss 200 VGS = 4.5 V 0.00 0 0 2 4 6 8 10 12 0 2 6 8 10 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 6 V ID = 3.5 A 4 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 4 3 2 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Document Number: 72014 S-31990—Rev. D, 13-Oct-03 8 10 1.4 VGS = 4.5 V ID = 3.5 A 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 0.3 0.2 ID = 3.5 A 0.1 0.0 1 0.0 On-Resistance vs. Gate-to-Source Voltage 0.4 20 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.6 12 ID = 250 mA 0.4 10 8 0.2 Power (W) V GS(th) Variance (V) 2 - 0.0 6 - 0.2 4 - 0.4 2 TA = 25_C - 0.6 - 50 - 25 0 25 50 75 100 125 0 150 0.01 0.1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 Limited by rDS(on) 1 ms, 100 ms I D - Drain Current (A) 10 10 ms 100 ms 1s 1 10 s 0.1 dc, 100 s TA = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72014 S-31990—Rev. D, 13-Oct-03 Si2315BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72014 S-31990—Rev. D, 13-Oct-03 www.vishay.com 5