VISHAY SI2335DS

Si2335DS
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–12
rDS(on) (W)
ID (A)
0.051 @ VGS = –4.5 V
–4.0
0.070 @ VGS = –2.5 V
–3.5
0.106 @ VGS = –1.8 V
–3.0
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2335DS (E5)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
–12
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150_C)
_ a, b
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 70_C
Operating Junction and Storage Temperature Range
PD
–3.2
–3.3
–2.6
A
–15
IS
TA = 25_C
V
–4.0
IDM
Unit
–1.6
1.25
0.75
0.8
0.48
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
166
40
50
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71314
S-02303—Rev. A, 23-Oct-00
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Si2335DS
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V(BR)DSS
VGS = 0 V, ID = –10 mA
–12
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltage
V
VDS = 0 V, VGS = 8 V
100
VDS = –9.6 V, VGS = 0 V
–1
VDS = –9.6 V, VGS = 0 V, TJ = 55_C
–10
VDS –5 V, VGS = –4.5 V
–15
VDS –5 V, VGS = –2.5 V
–6
nA
m
mA
A
VGS = –4.5 V, ID = –4.0 A
0.042
0.051
VGS = –2.5 V, ID = –3.5 A
0.058
0.070
0.106
VGS = –1.8 V, ID = –2.0 A
0.082
gfs
VDS = –5 V, ID = –4.0 A
7
VSD
IS = –1.6 A, VGS = 0 V
W
S
–1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
9
VDS = –6 V, VGS = –4.5 V
ID –4.0 A
15
1.9
nC
1.5
1225
VDS = –6 V, VGS = 0, f = 1 MHz
260
pF
130
Switchingc
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
VDD = –6 V, RL = 6 W
ID –1.0 A, VGEN = –4.5 V
RG = 6 W
tf
13.0
20
15
25
50
70
19
35
ns
Notes
a. Pulse test: PW 300 ms duty cycle 2%.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
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Document Number: 71314
S-02303—Rev. A, 23-Oct-00
Si2335DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
15
15
VGS = 4.5 thru 2.5 V
TC = –55_C
12
I D – Drain Current (A)
I D – Drain Current (A)
12
2V
9
6
1.5 V
3
25_C
9
125_C
6
3
1, 0.5 V
0
0
2
4
6
8
0
0.0
10
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.0
2.5
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
2000
0.30
0.25
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
1.5
0.20
VGS = 1.8 V
0.15
0.10
VGS = 2.5 V
1500
Ciss
1000
500
Coss
0.05
VGS = 4.5 V
0.00
Crss
0
0
3
6
9
12
15
0
3
ID – Drain Current (A)
9
12
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
8
1.6
VDS = 6 V
ID = 4.0 A
r DS(on) – On-Resistance ( W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
6
6
4
2
0
0
5
10
15
Qg – Total Gate Charge (nC)
Document Number: 71314
S-02303—Rev. A, 23-Oct-00
20
1.4
VGS = 4.5 V
ID = 4.0 A
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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Si2335DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
20
r DS(on) – On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150_C
TJ = 25_C
1
0.4
ID = 4.0 A
0.3
0.2
0.1
0.0
0.1
0.0
0.2
0.4
0.6
1.0
0.8
0
1.2
VSD – Source-to-Drain Voltage (V)
2
6
8
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
12
ID = 250 mA
0.3
10
8
0.2
Power (W)
V GS(th) Variance (V)
4
0.1
6
0.0
4
–0.1
2
TA = 25_C
–0.2
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
TJ – Temperature (_C)
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120_C/W
0.02
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 71314
S-02303—Rev. A, 23-Oct-00