Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ b TA= 25_C TA= 70_C Pulsed Drain Currenta IS TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range PD –1.75 –1.6 IDM Continuous Source Current (Diode Conduction)b V –2.0 ID –1.4 A –10 –0.75 –0.6 0.9 0.7 0.57 0.45 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc RthJA Typical Maximum 115 140 140 175 Unit _ _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71835 S-20617—Rev. B, 29-Apr-02 www.vishay.com 1 Si2301ADS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = –250 mA –20 VGS(th) VDS = VGS, ID = –250 mA –0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage –0.95 "100 VDS = –16 V, VGS = 0 V –1 VDS = –16 V, VGS = 0 V, TJ = 55_C –10 VDS v –5 V, VGS = –4.5 V –6 VDS v –5 V, VGS = –2.5 V –3 nA m mA A VGS = –4.5 V, ID = –2.8 A 0.093 0.130 VGS = –2.5 V, ID = –2.0 A 0.140 0.190 gfs VDS = –5 V, ID = –2.8 A 6.5 VSD IS = –0.75 A, VGS = 0 V –0.80 –1.2 4.2 10 rDS(on) V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V ID ^ –2.8 A 0.8 Gate-Drain Charge Qgd 0.8 Input Capacitance Ciss 500 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –6 V, VGS = 0, f = 1 MHz nC 115 pF 62 Switchingc td(on) Turn-On Time Turn-Off Time tr td(off) VDD = –6 V, RL = 6 W ID ^ –1.0 A, VGEN = –4.5 V RG = 6 W tf 6 25 30 60 25 70 10 60 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 www.vishay.com 2 Document Number: 71835 S-20617—Rev. B, 29-Apr-02 Si2301ADS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 Transfer Characteristics 10 VGS = 5, 4.5, 4, 3.5, 3 V 2.5 V 6 2V 4 2 2 125_C 4 1.5 V 0 1 25_C 6 2 0, 0.5, 1 V 0 TC = –55_C 8 I D – Drain Current (A) I D – Drain Current (A) 8 3 4 0 0.0 5 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.6 800 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) 0.5 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 600 Ciss 400 200 Coss 0.1 Crss 0.0 0 0 2 4 6 8 0 10 4 Gate Charge 1.6 VDS = 10 V ID = 3.6 A 16 20 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A 4 1.4 r DS(on)– On-Resistance ( W ) (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 5 8 3 2 1 0 0 1 2 3 Qg – Total Gate Charge (nC) Document Number: 71835 S-20617—Rev. B, 29-Apr-02 4 5 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si2301ADS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.6 r DS(on)– On-Resistance ( W ) 0.5 I S – Source Current (A) 1 TJ = 150_C 0.1 TJ = 25_C 0.01 0.4 ID = 3.6 A 0.3 0.2 0.1 0.0 0.001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 2 6 8 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 10 0.4 0.3 8 0.2 6 Power (W) V GS(th) Variance (V) 4 ID = 250 mA 0.1 4 0.0 2 –0.1 –0.2 –50 –25 0 25 50 75 100 125 0 0.01 150 0.10 1.00 TJ – Temperature (_C) 10.00 100.00 1000.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71835 S-20617—Rev. B, 29-Apr-02