VISHAY SI2302ADS

Si2302ADS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (Ω)
ID (A)
0.060 @ VGS = 4.5 V
2.4
0.115 @ VGS = 2.5 V
2.0
TO-236
(SOT-23)
G
1
S
2
3
D
Ordering Information: Si2302ADS-T1
Top View
Si2302DS (2A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150_C)a
TA= 25_C
TA= 70_C
Pulsed Drain Currenta
IS
TA= 25_C
Power Dissipationa
TA= 70_C
Operating Junction and Storage Temperature Range
PD
2.1
1.9
IDM
Continuous Source Current (Diode Conduction)a
V
2.4
ID
1.7
A
10
0.94
0.6
0.9
0.7
0.57
0.46
TJ, Tstg
Unit
W
_C
--55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t ± 5 sec.
Maximum Junction
Junction-to-Ambient
to Ambienta
Steady State
RthJA
Typical
Maximum
115
140
140
175
Unit
_C/W
Notes
a. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71831
S-41772—Rev. D, 20-Sep-04
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Si2302ADS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 10 mA
20
VGS(th)
VDS = VGS, ID = 50 mA
0.65
0.95
1.2
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 8 V
100
VDS = 20 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V, TJ = 55_C
10
On State Drain Currenta
On-State
ID(on)
D( )
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
VDS ≥ 5 V, VGS = 4.5 V
6
VDS ≥ 5 V, VGS = 2.5 V
4
V
nA
mA
A
VGS = 4.5 V, ID = 3.6 A
0.045
0.060b
VGS = 2.5 V, ID = 3.1 A
0.070
0.115
gfs
VDS = 5 V, ID = 3.6 A
8
VSD
IS = 0.94 A, VGS = 0 V
0.76
1.2
4.0
10
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
0.65
rDS(on)
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
nC
1.5
300
VDS = 10 V, VGS = 0 V, f = 1 MHz
120
pF
80
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
7
15
tr
55
80
16
60
10
25
td(off)
tf
VDD = 10 V, RL = 2.8 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 6 Ω
ns
Notes
a. Pulse test: PW ≤300 ms duty cycle ≤2%.
b. Effective for production 10/04.
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Document Number: 71831
S-41772—Rev. D, 20-Sep-04
Si2302ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
Transfer Characteristics
10
VGS = 5 thru 2.5 V
8
I D -- Drain Current (A)
I D -- Drain Current (A)
8
6
2V
4
2
4
TC = 125_C
2
1.5 V
0, 0.5, 1 V
6
25_C
--55_C
0
0
1
2
3
4
0
0.0
5
0.5
VDS -- Drain-to-Source Voltage (V)
1.0
2.0
2.5
VGS -- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
600
0.15
500
0.12
C -- Capacitance (pF)
r DS(on)-- On-Resistance ( Ω )
1.5
0.09
VGS = 2.5 V
0.06
VGS = 4.5 V
0.03
400
Ciss
300
200
Coss
100
Crss
0.00
0
0
2
4
6
8
0
10
Gate Charge
1.8
1.6
4
rDS(on) -- On-Resiistance
(Normalized)
V GS -- Gate-to-Source Voltage (V)
VDS = 10 V
ID = 3.6 A
3
2
1
0
0
1
2
3
Qg -- Total Gate Charge (nC)
Document Number: 71831
S-41772—Rev. D, 20-Sep-04
8
12
16
20
VDS -- Drain-to-Source Voltage (V)
ID -- Drain Current (A)
5
4
4
5
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 3.6 A
1.4
1.2
1.0
0.8
0.6
--50
0
50
100
150
TJ -- Junction Temperature (_C)
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Si2302ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on)-- On-Resistance ( Ω )
I S -- Source Current (A)
10
TJ = 150_C
1
TJ = 25_C
0.1
0.001
0.16
0.12
ID = 3.6 A
0.08
0.04
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
VSD -- Source-to-Drain Voltage (V)
2
4
6
8
VGS -- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.3
10
0.2
8
ID = 250 mA
--0.0
Power (W)
VGS(th) Variance (V)
0.1
--0.1
--0.2
6
TC = 25_C
Single Pulse
4
--0.3
2
--0.4
--0.5
--50
0
0
50
100
150
0.01
0.10
TJ -- Temperature (_C)
1.00
10.00
100.00
1000.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 --4
10 --3
10 --2
10 --1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 71831
S-41772—Rev. D, 20-Sep-04