VISHAY SI4854DY

Si4854DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.026 @ VGS = 10 V
6.9
0.030 @ VGS = 4.5 V
6.4
0.041 @ VGS = 2.5 V
5.5
FEATURES
D LITTLE FOOT Plust—Dual TrenchFETr
Power MOSFET Plus Integrated Schottky
Diode
D PWM Optimized for Faster Swtiching
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V @ 1.0 A
2.0
D DC/DC Conversion for 3- to 6-A Output
Current
– Notebook
– Desktop
D1
D1
D2
D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Schottky Diode
G1
G2
Top View
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"12
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current
5.1
5.5
4.1
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
A
30
IS
TA = 25_C
V
6.9
ID
PD
Unit
1.7
0.9
2.0
1.1
1.3
0.7
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Symbol
t v 10 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady-State
Steady-State
RthJA
RthJC
Schottky
Typ
Max
Typ
Max
52
62.5
53
62.5
93
110
93
110
35
40
35
40
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
www.vishay.com
1
Si4854DY
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
0.6
IGSS
VDS = 0 V, VGS = "12 V
Typa
Max
Unit
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
VDS = 24 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 85_C
_
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
ID(on)
rDS(on)
gfs
VSD
V
Ch-1
1
Ch-2
100
Ch-1
15
2000
Ch-2
VDS = 5 V, VGS = 10 V
20
A
VGS = 10 V, ID = 6.9 A
0.021
0.026
VGS = 4.5 V, ID = 6.4 A
0.024
0.030
VGS = 2.5 V, ID = 5.5 A
0.034
0.041
VDS = 15 V, ID = 6.9 A
IS = 1 A, VGS = 0 V
m
mA
22
W
S
Ch-1
0.7
1.2
Ch-2
0.47
0.5
9
14
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.6
Turn-On Delay Time
td(on)
20
30
tr
20
30
35
55
10
20
Ch-1
40
80
Ch-2
32
70
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
2.1
VDS = 15 V, VGS = 4.5 V, ID = 6.9 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
m
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
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CT
Test Condition
Min
Typ
Max
IF = 1.0 A
0.47
0.50
IF = 1.0 A, TJ = 125_C
0.36
0.42
Vr = 30 V
0.004
0.100
Vr = 30 V, TJ = 100_C
0.7
10
Vr = –30 V, TJ = 125_C
3.0
20
Vr = 10 V
50
Unit
V
mA
pF
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
Si4854DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
30
30
VGS = 10 thru 3 V
24
I D – Drain Current (A)
I D – Drain Current (A)
24
18
12
2V
18
12
TC = 125_C
6
6
0
0
0.0
25_C
–55_C
0
2
4
6
8
10
0.5
VDS – Drain-to-Source Voltage (V)
1.0
0.060
1200
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
1500
VGS = 2.5 V
VGS = 4.5 V
0.030
VGS = 10 V
0.015
2.0
2.5
3.0
Capacitance
On-Resistance vs. Drain Current
0.075
0.045
1.5
VGS – Gate-to-Source Voltage (V)
Ciss
900
600
Coss
300
Crss
0.000
0
0
6
12
18
24
30
0
6
ID – Drain Current (A)
18
24
30
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.8
VDS = 15 V
ID = 6.9 A
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
12
8
6
4
2
1.6
VGS = 10 V
ID = 6.9 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
Qg – Total Gate Charge (nC)
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
20
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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Si4854DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
r DS(on) – On-Resistance ( W )
I S – Source Current (A)
40
TJ = 150_C
10
TJ = 25_C
ID = 6.9 A
0.08
0.06
0.04
0.02
0.00
1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
VSD – Source-to-Drain Voltage (V)
2
4
Threshold Voltage
8
10
Single Pulse Power
0.4
50
0.2
40
ID = 250 mA
–0.0
Power (W)
V GS(th) Variance (V)
6
VGS – Gate-to-Source Voltage (V)
–0.2
30
20
–0.4
10
–0.6
–0.8
–50
–25
0
25
50
75
100
125
150
0
10–3
10–2
10–1
TJ – Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 93_C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
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4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
Si4854DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
Forward Voltage Drop
10
10
TJ = 150_C
I F – Forward Current (A)
I R – Reverse Current (mA)
SCHOTTKY
1
30 V
0.1
24 V
0.01
TJ = 25_C
0.001
0.0001
0
25
50
75
100
125
150
TJ – Temperature (_C)
1
0.0
0.3
0.6
0.9
1.2
1.5
VF – Forward Voltage Drop (V)
Capacitance
200
C – Capacitance (pF)
160
120
80
Coss
40
0
0
6
12
18
24
30
VDS – Drain-to-Source Voltage (V)
Document Number: 71444
S-03476—Rev. A, 16-Apr-01
www.vishay.com
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