VISHAY SI4834DY

Si4834DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.022 @ VGS = 10 V
7.5
0.030 @ VGS = 4.5 V
6.5
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (v)
Diode Forward Voltage
IF (A)
30
0.50 V @ 1.0 A
2.0
D1
D1
D2
D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Schottky Diode
G1
G2
Top View
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Ordering Information: Si4834DY
Si4834DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
5.7
6.0
4.6
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
A
30
IS
TA = 25_C
V
7.5
IDM
PD
1.7
0.9
2.0
1.1
1.3
0.7
TJ, Tstg
Unit
W
_C
- 55 to 150
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Symbol
t v 10 sec
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Steady-State
Steady-State
RthJA
RthJC
Schottky
Typ
Max
Typ
Max
52
62.5
53
62.5
93
110
93
110
35
40
35
40
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71183
S-31062—Rev. B, 26-May-03
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Si4834DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
Typa
Max
Unit
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
VDS = 24 V,
V VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V,
V VGS = 0 V,
V TJ = 85_C
On-State Drain Currentb
Drain Source On-State
Drain-Source
On State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
ID(on)
rDS(on)
DS( )
gfs
VSD
V
100
Ch-1
Ch
1
Ch-2
1
Ch-1
Ch
1
2000
15
Ch-2
VDS = 5 V, VGS = 10 V
20
A
VGS = 10 V, ID = 7.5 A
0.018
0.022
VGS = 4.5 V, ID = 6.5 A
0.024
0.030
VDS = 15 V, ID = 7.5 A
IS = 1 A,
A VGS = 0 V
mA
22
W
S
Ch-1
Ch
1
0.47
0.5
Ch-2
0.8
1.2
13
20
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
2
VDS = 15 V,, VGS = 10 V,, ID = 7.5 A
nC
2.7
1.9
3.2
td(on)
8
16
tr
10
20
21
40
10
20
Ch-1
Ch
1
32
70
Ch-2
40
80
td(off)
Fall Time
tf
Source Drain Reverse Recovery Time
Source-Drain
trr
0.5
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7
17A
A, di/dt = 100 A/ms
W
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage
g Current
Irm
Junction Capacitance
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CT
Test Condition
Min
Typ
Max
IF = 1.0 A
0.47
0.50
IF = 1.0 A, TJ = 125_C
0.36
0.42
Vr = 30 V
0.004
0.100
Vr = 30 V, TJ = 100_C
0.7
10
Vr = - 30 V, TJ = 125_C
3.0
20
Vr = 10 V
50
Unit
V
mA
pF
Document Number: 71183
S-31062—Rev. B, 26-May-03
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
20
20
3V
VGS = 10 thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
4
12
8
TC = 125_C
4
25_C
2V
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
0.032
800
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
1000
VGS = 4.5 V
VGS = 10 V
0.016
0.008
2.5
3.0
Ciss
600
400
Coss
Crss
200
0.000
0
0
4
8
12
16
20
0
6
ID - Drain Current (A)
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
VDS = 15 V
ID = 7.5 A
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
2.0
Capacitance
On-Resistance vs. Drain Current
0.040
0.024
1.5
VGS - Gate-to-Source Voltage (V)
8
6
4
2
VGS = 10 V
ID = 7.5 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Document Number: 71183
S-31062—Rev. B, 26-May-03
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
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Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.04
20
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10
TJ = 25_C
ID = 7.5 A
0.03
0.02
0.01
0.00
1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
VSD - Source-to-Drain Voltage (V)
2
4
Threshold Voltage
8
10
Single Pulse Power
0.4
50
0.2
40
ID = 250 mA
- 0.0
Power (W)
V GS(th) Variance (V)
6
VGS - Gate-to-Source Voltage (V)
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10 -3
10 -2
10 -1
TJ - Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 93_C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
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10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71183
S-31062—Rev. B, 26-May-03
Si4834DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
Forward Voltage Drop
10
10
TJ = 150_C
I F - Forward Current (A)
I R - Reverse Current (mA)
SCHOTTKY
1
30 V
0.1
24 V
0.01
TJ = 25_C
0.001
0.0001
0
25
50
75
100
125
150
TJ - Temperature (_C)
1
0.0
0.3
0.6
0.9
1.2
1.5
VF - Forward Voltage Drop (V)
Capacitance
200
C - Capacitance (pF)
160
120
80
Coss
40
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Document Number: 71183
S-31062—Rev. B, 26-May-03
www.vishay.com
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