Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit –1 µA Collector cutoff current ICEO VCE = –120V, IB = 0, Ta = 60˚C Collector to emitter voltage VCEO IC = –100µA, IB = 0 –200 V Emitter to base voltage VEBO IE = –1µA, IC = 0 –5 V Forward current transfer ratio hFE * VCE = –10V, IC = –5mA 60 Collector to emitter saturation voltage VCE(sat) IC = –50mA, IB = –5mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f= 1MHz *h FE 220 –1.5 50 V MHz 10 pF Rank classification Rank Q R hFE 60 ~ 150 100 ~ 220 1 2SA1018 Transistor PC — Ta IC — VCE –120 –90 IB=–1.0mA 700 600 500 400 300 200 – 0.9mA –70 – 0.8mA –60 – 0.7mA – 0.6mA –50 – 0.5mA –40 – 0.4mA –30 – 0.3mA –20 –10 60 80 100 120 140 160 Ambient temperature Ta (˚C) –2 –10 –3 –1 Ta=75˚C –25˚C – 0.03 –1 –3 –10 –6 –10 –12 –30 Ta=75˚C 150 25˚C 100 –25˚C 50 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) VCE=–120V 3000 16 1000 ICEO (Ta) ICEO (Ta=25˚C) 14 12 10 8 300 100 30 6 10 4 3 2 1 –10 –30 –100 Collector to base voltage VCB (V) –1.2 –1.6 –2.0 0 40 80 120 160 200 100 80 60 40 20 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) ICEO — Ta 10000 IE=0 f=1MHz Ta=25˚C – 0.8 VCB=–10V Ta=25˚C 200 Cob — VCB –3 – 0.4 Base to emitter voltage VBE (V) fT — IE 250 –100 20 0 –1 0 120 Collector current IC (mA) 18 –8 VCE=–10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 – 0.01 – 0.1 – 0.3 –4 300 IC/IB=10 – 0.1 –40 hFE — IC –100 25˚C –60 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –80 0 0 Transition frequency fT (MHz) 40 –25˚C – 0.1mA 0 20 Ta=75˚C –20 – 0.2mA 100 25˚C –100 –80 Collector current IC (mA) 800 0 Collector output capacitance Cob (pF) VCE=–10V Ta=25˚C 900 0 2 IC — VBE –100 Collector current IC (mA) Collector power dissipation PC (mW) 1000 240 Ambient temperature Ta (˚C) 100