Power Transistors 2SA0963 (2SA963) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC2209 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with 2SC2209 3.05±0.1 ■ Features 11.0±0.5 2.3±0.2 3.8±0.3 120 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Symbol Rating Unit VCBO −50 V Collector to emitter voltage VCEO −40 V Emitter to base voltage VEBO −5 V Peak collector current ICP −3 A Collector current IC −1.5 A Collector power dissipation (TC = 25°C) PC 10 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 0.5±0.1 4.6±0.2 1 2 1.26±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126A Package 3 ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Max Unit ICBO VCB = −20 V, IE = 0 Conditions Min Typ −1 µA ICEO VCE = −10 V, IB = 0 −100 µA Emitter cutoff current IEBO VEB = −5 V, IC = 0 −10 µA Collector to base voltage VCBO IC = −1 mA, IE = 0 −50 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −40 V VCE = −5 V, IC = −1 A 80 Forward current transfer ratio * hFE Collector to emitter saturation voltage VCE(sat) IC = −1.5 A, IB = −150 mA Base to emitter saturation voltage VBE(sat) IC = −2 A, IB = − 0.2 A Transition frequency fT Collector output capacitance Cob 220 −1.0 −1.5 V V VCB = −5 V, IE = 0.5 A, f = 200 MHz 150 MHz VCB = −5 V, IE = 0, f = 1 MHz 70 pF Note) *: Rank classification Rank Q R hFE 80 to 160 120 to 220 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SA0963 Power Transistors IC VCE VCE(sat) IC –4.0 TC=25˚C IB=–40mA –3.5 10 –35mA Collector current IC (A) Collector power dissipation PC (W) Without heat sink 8 6 4 –3.0 –30mA –25mA –2.5 –20mA –2.0 –15mA –1.5 –10mA –1.0 –5mA 2 0 0 20 40 60 80 100 120 140 160 180 200 IC/IB=10 –10 –3 –1 –0.3 TC=100˚C –0.1 25˚C –25˚C –0.03 –0.5 0 Collector to emitter saturation voltage VCE(sat) (V) PC T a 12 0 –2 –4 –6 –8 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) VBE(sat) IC hFE IC –0.01 –0.01 –0.03 –0.1 –0.3 –1 fT I E IC/IB=10 TC=–25˚C –1 100˚C –0.3 25˚C –0.1 –0.03 –0.01 –0.01 –0.03 –0.1 –0.3 –1 TC=100˚C 25˚C 300 –25˚C 100 30 10 3 1 –0.01 –0.03 –3 Transition frequency fT (MHz) –3 Collector current IC (A) –0.1 –0.3 –1 40 0 0.01 0.03 80 60 40 20 –30 –100 0.1 0.3 1 3 10 Emitter current IE (A) ICEO Ta 1000 VCE=–12V 500 –50 300 200 –40 100 ICEO (Ta) ICEO (Ta=25˚C) 100 Collector to base voltage VCB (V) 2 80 TC=25˚C Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) 120 –10 120 VCER RBE IE=0 f=1MHz TC=25˚C –3 160 –3 –60 140 200 Collector current IC (A) Cob VCB 0 –1 VCB=–5V f=200MHz TC=25˚C VCE=–5V 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 240 –10 –3 Collector current IC (A) –30 –20 50 30 20 10 5 –10 0 0.001 3 2 1 0.01 0.1 1 10 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 120 Ambient temperature Ta (˚C) Power Transistors 2SA0963 Area of safe operation (ASO) –10 Collector current IC (A) –3 –1 Single pulse TC=25˚C ICP t=10ms IC t=1s –0.3 –0.1 –0.03 –0.01 –0.003 –0.001 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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