Power Transistors 2SC3944, 2SC3944A Silicon NPN epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A 16.7±0.3 14.0±0.5 2.7±0.2 4.2±0.2 • Excelent current IC characteristics of forward current transfer ratio hFE vs. collector • High transition frequency fT • A complementary pair with 2SA1535 and 2SA1535A, is optimum for the driver-stage of a 60 W to 100 W output amplifier • Full-pack package which can be installed to the heat sink with one screw 5.5±0.2 φ 3.1±0.1 Collector to base voltage 2SC3944 Collector to emitter voltage 2SC3944 2.54±0.3 Symbol Rating Unit VCBO 150 V VCEO 150 2SC3944A 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 1 2 3 V 180 Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A 15 W Collector power dissipation 5.08±0.5 180 2SC3944A 0.5+0.2 –0.1 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter 1.3±0.2 1.4±0.1 Solder Dip (4.0) ■ Features 4.2±0.2 7.5±0.2 0.7±0.1 Unit: mm 10.0±0.2 TC = 25°C PC Ta = 25°C 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SC3944 Collector to base voltage 2SC3944 Conditions VCB = 150 V, IE = 0 VCEO IC = 1 mA, IB = 0 VEBO IE = 10 µA, IC = 0 5 2SC3944A Forward current transfer ratio Typ VCB = 180 V, IE = 0 2SC3944A Emitter cutoff current Min ICBO Max Unit 10 µA 10 150 V 180 V VCE = 10 V, IC = 150 mA 95 160 hFE2 VCE = 5 V, IC = 500 mA 50 100 Collector to emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.5 2 V Base to emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 1 2 V Transition frequency hFE1 * fT Collector output capacitance Cob VCB = 10 V, IE = −50 mA, f = 10 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 30 220 MHz 50 pF Note) *: Rank classification Rank Q R hFE1 95 to 155 130 to 220 1 2SC3944, 2SC3944A Power Transistors VCE(sat) IC 15 10 5 0 0 20 40 60 80 100 120 140 160 IC/IB=10 3 1 0.3 TC=100˚C 25˚C 0.1 –25˚C 0.03 0.01 0.01 Ambient temperature Ta (˚C) 0.03 Transition frequency fT (MHz) Forward current transfer ratio hFE 25˚C –25˚C 30 10 3 1 0.01 0.03 0.1 0.3 Area of safe operation (ASO) Single pulse TC=25˚C t=<50µs DC 0.3 t=10ms 0.1 1ms 0.03 2SC3944 0.01 0.003 0.001 1 3 10 30 100 2SC3944A Collector current IC (A) ICP IC 300 1000 Collector to emitter voltage VCE (V) 2 100˚C 25˚C 0.3 0.1 0.03 0.03 0.1 0.3 1 Collector current IC (A) Cob VCB 100 300 200 100 IE=0 f=1MHz TC=25˚C 80 60 40 20 0 – 0.03 – 0.1 – 0.3 Emitter current IE (A) 10 1 TC=–25˚C 1 0.01 0.01 1 VCB=10V f=10MHz TC=25˚C 0 – 0.01 1 Collector current IC (A) 3 3 fT IE TC=100˚C 100 0.3 400 VCE=10V 300 0.1 IC/IB=10 Collector current IC (A) hFE IC 1000 VBE(sat) IC 10 Base to emitter saturation voltage VBE(sat) (V) 20 10 Collector output capacitance Cob (pF) Collector power dissipation PC (W) TC=Ta Collector to emitter saturation voltage VCE(sat) (V) PC T a 25 –1 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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